EMD1S RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION EMD4S SINGLE-PHASE GLASS PASSIVATED MINI SUPER FAST SURFACE MOUNT BRIDGE RECTIFIER VOLTAGE RANGE 50 to 200 Volts CURRENT 0.5 Ampere FEATURES * * * * * * * Surge overload rating - 30 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded Glass passivated device Polarity symbols molded on body Mounting position: Any Weight: 0.5 gram MD-S MECHANICAL DATA 1 2 3 4 * Epoxy : Device has UL flammability classification 94V-0 M D 0.106(2.7) 0.091(2.3) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. 0.152(3.6) 0.006(0.15) 0.193(4.9) 0.177(4.5) For capacitive load, derate current by 20%. 0.157(4.0) 0.014(0.35) o Single phase, half wave, 60 Hz, resistive or inductive load. 0.157(4.0) 0.145(3.6) 2.756(7.0) 0.108(2.74) 0.092(2.34) 0.193(4.9) 0.177(4.5) 0.260(6.6) .004(0.10) MAX. 0.028(0.9) 0.020(0.5) Dimensions in millimeters o MAXIMUM RATINGS (At T A = 25 C unless otherwise noted) SYMBOL EMD1S EMD2S Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 Maximum RMS Bridge Input Voltage VRMS 35 70 Maximum DC Blocking Voltage VDC 50 100 RATINGS Maximum Average Forward Output Rectified Current at T A = 30oC - on glass-epoxy P.C.B. ( NOTE 1 ) - on aluminum substrate ( NOTE 2 ) EMD4S UNITS 200 Volts 105 140 Volts 150 200 Volts EMD3S Amp 0.5 IO 0.8 Peak Forward Surge Current 8.3 ms single half sine-wave I FSM superimposed on rated load (JEDEC method) Typical Junction Capacitance ( Note 5 ) Operating and Storage Temperature Range 20 Amps pF CJ 15 T J, T STG -55 to + 150 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS SYMBOL Maximum Forward Voltage Drop per Bridge Element at 0.5A DC Maximum Reverse Current at rated @T A = 25 o C DC Blocking Voltage per element @T A = 125 oC Maximum Reverse Recovery Time (Note 4) VF IR trr EMD1S EMD2S EMD3S EMD4S UNITS 1.05 Volts 10 uAmps 0.5 mAmps 50 nSec 2002-4 NOTE: 1. On glass-epoxy P.C.B. mounted on 0.05 X 0.05” (1.3 X 1.3mm) pads. 2. On aluminum substrate P.C.B. with an area of 0.8 X 0.8 X 0.25” (20 X 20 X 6.4mm) mounted on 0.05 X 0.05” (1.27 X 1.27mm) solder pad. 3. Suffix “-S” Surface Mount for Mini Dip Bridge. 4. Test Conditions: IF=0.5A, IR =-1.0A, IRR=-0.25A. 5. Measured at 1MHz and applied reverse voltage of 4.0 volts. RATING AND CHARACTERISTIC CURVES ( EMD1S THRU EMD4S ) 10 NONINDUCTIVE AVERAGE FORWARD CURENT, (A) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE trr +0.5A (-) D.U.T (+) 25 Vdc (approx) (-) 0 PULSE GENERATOR (NOTE 2) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) -0.25A (+) -1.0A 1cm NOTES:1 Rise Time = 7ns max. Input Impedance = SET TIME BASE FOR 10 ns/cm 1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. 100 TJ = 150 10 TJ = 100 1.0 TJ = 25 .1 .01 Single Phase Half Wave 60Hz Resistive or Inductive Load 0.5 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( ) 10 1.0 TJ = 25 .1 Pulse Width = 300uS 1% Duty Cycle .01 .001 0 20 40 60 80 100 120 0 140 JUNCTION CAPACITANCE, (pF) 30 8.3ms Single Half Sine-Wave (JEDEC Method) 25 20 15 10 5 0 .4 .6 .8 1.0 1.2 1.4 FIG. 6 - TYPICAL JUNCTION CAPACITANCE FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 35 .2 INSTANTANEOUS FORWARD VOLTAGE, (V) PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) PEAK FORWARD SURGE CURRENT, (A) 1.0 FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, (uA) FIG. 3 - TYPICAL REVERSE CHARACTERISTICS FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE 200 100 60 40 20 10 TJ = 25 6 4 2 1 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 .1 .2 .4 1.0 2 4 10 20 40 REVERSE VOLTAGE, ( V ) RECTRON 100 Mounting Pad Layout 0.272 MAX. (6.91 MAX.) 0.105 (2.67) 0.095 (2.41) 0.023 MIN. (0.58 MIN.) 0.030 MIN. (0.076 MIN.) Dimensions in inches and (millimeters) RECTRON