EMH1303 Ordering number : ENA0661A SANYO Semiconductors DATA SHEET EMH1303 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --12 V ±10 V Allowable Power Dissipation ID IDP PD 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% Mounted on a ceramic board (1200mm2×0.8mm) Package Dimensions Product & Package Information unit : mm (typ) 7045-001 • Package : EMH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.125 0.2 0.2 EMH1303-TL-E 5 Taping Type : TL JC TL 1 A A Marking 2.1 1.7 8 --7 --28 Lot No. 0.2 4 0.5 0.05 0.75 2.0 Electrical Connection 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 8 7 6 5 1 2 3 4 SANYO : EMH8 http://semicon.sanyo.com/en/network 62712 TKIM/O2407PE TIIM TC-00000967 No. A0661-1/7 EMH1303 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS1 Conditions IDSS2 ID=--1mA, VGS=0V VDS=--8V, VGS=0V VDS=--12V, VGS=0V Cutoff Voltage IGSS VGS(off) VGS=±8V, VDS=0V VDS=--6V, ID=--1mA Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 VDS=--6V, ID=--3A ID=--6A, VGS=--4.5V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings min typ Unit max --12 V --0.4 7.2 ID=--6A, VGS=--2.5V ID=--0.5A, VGS=--1.8V --1 μA --10 μA ±10 μA --1.2 12 V S 18 23 mΩ 27 36 mΩ 40 65 mΩ 1100 pF 350 pF Crss 265 pF Turn-ON Delay Time td(on) 11 ns Rise Time tr 165 ns Turn-OFF Delay Time td(off) 100 ns Fall Time tf 105 ns Total Gate Charge Qg 12.0 nC Gate-to-Source Charge Qgs 1.9 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--6V, f=1MHz See specified Test Circuit. VDS=--6V, VGS=--4.5V, ID=--7A 2.9 IS=--7A, VGS=0V --0.8 nC --1.2 V Switching Time Test Circuit VDD= --6V VIN 0V --4.5V ID= --3A RL=2Ω VOUT VIN D PW=10μs D.C. 1% G EMH1303 P.G 50Ω S Ordering Information Device EMH1303-TL-E Package Shipping memo EMH8 3,000pcs./reel Pb Free No. A0661-2/7 EMH1303 ID -- VDS VDS= --6V --9 --2 --6 --5 --4 --3 25° --2 --1 --25°C --3 --7 C .5V V GS= --1 Ta=7 5°C Drain Current, ID -- A --8 --6. --4.5V 0V --4 ID -- VGS --10 --1.8 V --8.0V --5 Drain Current, ID -- A --2.5 --4.0V V --6 --1 0 0 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --6A 40 30 20 10 0 0 --1 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V °C -25 =- Ta 3 2 25 C 5° °C 7 1.0 7 5 2 A I = --6 --2.5V, D = V GS = --6A 4.5V, I D V GS= -- 30 20 10 --40 --20 0 20 40 60 80 100 120 140 160 IT12939 IS -- VSD VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 --0.001 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 7 --10 IT12940 0 7 5 --0.4 --0.6 --0.8 --1.0 --1.2 IT12941 Ciss, Coss, Crss -- VDS 5 VDD= --6V VGS= --4.5V 1000 --0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 2 f=1MHz 3 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 40 --0.5A --0.01 7 5 3 2 3 0.1 --0.01 ,I = --1.8V D V GS= --10 7 5 3 2 Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S 7 5 50 Ambient Temperature, Ta -- °C 2 10 --2.5 IT12937 60 IT12938 VDS= --6V 3 --2.0 70 0 --60 --8 ⏐yfs⏐ -- ID 5 --1.5 RDS(on) -- Ta 80 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 60 --1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C ID= --0.5A --0.5 IT12936 70 50 0 --1.0 RDS(on) -- VGS 80 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --0.9 5°C 25°C --25° C --0.1 Ta= 7 0 3 2 tf td(off) 100 7 5 tr 3 Ciss 1000 7 5 Coss 3 Crss 2 2 td(on) 10 7 5 --0.01 100 7 5 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT12942 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --12 IT12943 No. A0661-3/7 EMH1303 VGS -- Qg 7 5 3 2 VDS= --6V ID= --7A --4.0 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 5 6 7 8 9 10 11 12 Total Gate Charge, Qg -- nC IT12944 PD -- Ta 1.6 Allowable Power Dissipation, PD -- W 13 --10 7 5 3 2 ASO ID= --7A DC 10 op 0m era s n( Ta = tio --1.0 7 5 3 2 --0.1 7 5 3 2 PW≤10μs 10 0 1m μs 10 s ms IDP= --28A Operation in this area is limited by RDS(on). 25 °C ) Ta=25°C Single pulse Mounted on a ceramic board (1200mm2✕0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 IT13034 Drain-to-Source Voltage, VDS -- V 1.5 1.4 M ou nt 1.2 ed on 1.0 ac er am ic 0.8 bo ar d (1 20 0.6 0m m2 ✕ 0.4 0. 8m m ) 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12946 No. A0661-4/7 EMH1303 Embossed Taping Specification EMH1303-TL-E No. A0661-5/7 EMH1303 Outline Drawing EMH1303-TL-E Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 1.9 0.4 0.3 0.5 No. A0661-6/7 EMH1303 Note on usage : Since the EMH1303 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No. A0661-7/7