ECH8653 Ordering number : ENA0851 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8653 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. 4V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS ±10 V ID 7.5 A Drain Current (DC) Drain Current (Pulse) V IDP PD PW≤10µs, duty cycle≤1% 40 A Mounted on a ceramic board (900mm2✕0.8mm) 1unit 1.4 W PT Tch Mounted on a ceramic board (900mm2✕0.8mm) Channel Temperature Storage Temperature Tstg Allowable Power Dissipation Total Dissipation 1.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Marking : WY Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=4A Ratings min typ Unit max 20 V 1.0 3.4 1 µA ±10 µA 2.4 5.8 V S Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 53007PE TI IM TC-00000702 No. A0851-1/4 ECH8653 Continued from preceding page. Parameter Symbol Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Ratings Conditions min ID=4A, VGS=8V ID=4A, VGS=4V typ Unit max 9 14 20 mΩ 11 18 25 mΩ Input Capacitance Ciss VDS=10V, f=1MHz 1280 pF Output Capacitance Coss VDS=10V, f=1MHz 170 pF Reverse Transfer Capacitance Crss pF td(on) VDS=10V, f=1MHz See specified Test Circuit. 105 Turn-ON Delay Time 13 ns Rise Time tr td(off) See specified Test Circuit. 48 ns See specified Test Circuit. 94 ns tf Qg See specified Test Circuit. 36 ns VDS=10V, VGS=8V, ID=7.5A 18.5 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=8V, ID=7.5A VDS=10V, VGS=8V, ID=7.5A 2.7 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=7.5A, VGS=0V Turn-OFF Delay Time Fall Time Total Gate Charge Package Dimensions 3.1 0.82 8 7 6 5 1 2 3 4 Top View 0.25 2.9 0.15 5 2.3 0 to 0.02 2.8 V Electrical Connection unit : mm (typ) 7011A-003 8 nC 1.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain Top view 4 0.25 1 0.65 0.9 0.3 0.07 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Bottom View Switching Time Test Circuit VDD=10V VIN 8V 0V ID=4A RL=2.5Ω VIN D VOUT PW=10µs D.C.≤1% G ECH8653 P.G 50Ω S No. A0851-2/4 ECH8653 ID -- VDS 4.0 3.5 3.0 2.5 2.0 1.5 0.1 0.2 0.3 0.4 0.5 Drain-to-Source Voltage, VDS -- V Ta=25°C ID=4A 70 60 50 40 30 20 10 2 4 6 8 2.0 2.5 A I =4 =4V, D VGS =4A 8V, I D V GS= 20 10 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 5 140 160 IT12474 IS -- VSD 10 7 5 VDS=10V 3.0 IT12472 30 IT12473 yfs -- ID 10 1.5 RDS(on) -- Ta 0 --60 10 Gate-to-Source Voltage, VGS -- V 1.0 40 0 0 0.5 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ VGS=0V 3 1.0 °C 25 7 5 3 1.0 7 5 3 2 0.1 7 5 2 3 0.1 0.01 0.01 0.2 C C 5° --2 = °C Ta 75 2 2 --25° Source Current, IS -- A 3 Ta=7 5°C 25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 IT12471 RDS(on) -- VGS 80 Forward Transfer Admittance, yfs -- S 3 0 0 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 5 7 10 IT12475 0.6 0.8 1.0 1.2 IT12476 Ciss, Coss, Crss -- VDS 3 VDD=10V VGS=8V f=1MHz 2 Ciss Ciss, Coss, Crss -- pF 3 2 td(off) 100 7 5 tf 3 2 td(on) 10 7 5 tr 1000 7 5 3 Coss 2 Crss 100 3 2 1.0 0.01 0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 7 5 Switching Time, SW Time -- ns 4 1 0.5 0 7 5 2 VGS=2.0V 1.0 6 25° -C 25°C 4.5 7 °C 5.0 8 Ta=7 5 5.5 9 8.0V Drain Current, ID -- A 6.0 VDS=10V V 2.5 Drain Current, ID -- A 6.0V 6.5 ID -- VGS 10 4.0V 5.0V 7.0 3.0 V 7.5 7 5 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 7 10 IT12477 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 18 20 IT12478 No. A0851-3/4 ECH8653 VGS -- Qg 7 5 3 2 VDS=10V ID=7.5A 7 6 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 8 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 Total Gate Charge, Qg -- nC 20 IT12479 PD -- Ta 1.8 Allowable Power Dissipation, PD -- W 18 10 7 5 3 2 ASO IDP=40A ID=7.5A DC 10 ms 10 op 0m era s tio n( 1.0 7 5 3 2 0.1 7 5 3 2 PW≤10µs 10 1m 0µs s Ta = 25 Operation in this area is limited by RDS(on). °C ) Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT12480 Mounted on a ceramic board (900mm2✕0.8mm) 1.6 1.5 1.4 1.2 To t al 1.0 Di ss 1u 0.8 ni t ip ati on 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12481 Note on usage : Since the ECH8653 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2007. Specifications and information herein are subject to change without notice. PS No. A0851-4/4