Ordering number : ENN6642 5HP01N P-Channel Silicon MOSFET 5HP01N Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2178 [5HP01N] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5 0.44 14.0 0.45 1 Specifications 1.3 2 3 1 : Source 2 : Drain 3 : Gate 1.3 SANYO : NP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --50 V Gate-to-Source Voltage VGSS ID ±20 V --0.07 A Drain Current (DC) Drain Current (Pulse) IDP PD Allowable Power Dissipation PW≤10µs, duty cycle≤1% --0.28 A 0.4 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS VGS(off) Conditions ID =--1mA, VGS=0 VDS=--50V, VGS=0 VGS=±16V, VDS=0 VDS=--10V, ID=--100µA Ratings min typ max --50 Unit V --1 --10 µA ±10 µA --2.5 V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72600 TS IM TA-1974 No.6642-1/4 5HP01N Continued from preceding page. Parameter Symbol yfs RDS(on)1 RDS(on)2 Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time min VDS=--10V, ID=--40mA ID=--40mA, VGS=--10V ID=--20mA, VGS=--4V td(off) tf Fall Time Ratings Conditions typ 50 Unit max 70 mS 17 22 23 32 Ω Ω VDS=--10V, f=1MHz VDS=--10V, f=1MHz 6.2 pF 4.0 pF VDS=--10V, f=1MHz See specified Test Circuit 1.3 pF 13 ns See specified Test Circuit 10 ns See specified Test Circuit 100 ns See specified Test Circuit 150 ns 1.32 nC 0.17 nC 0.85 Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd VDS=--10V, VGS=--10V, ID=--70mA VDS=--10V, VGS=--10V, ID=--70mA VDS=--10V, VGS=--10V, ID=--70mA Diode Forward Voltage VSD IS=--70mA, VGS=0 0.34 nC 1.2 V Marking : XC Switching Time Test Circuit 0V --10V VDD= --25V VIN ID= --40mA RL=625Ω VIN PW=10µs D.C.≤1% D VOUT G 5HP01N 50Ω S ID -- VDS ID -- VGS --0.14 25°C 0V --0.03 --3.0V --0.02 --0.10 VDS= --10V 75°C Drain Current, ID -- A --0.04 --0.01 --0.08 --0.06 --0.04 --0.02 VGS= --2.5V 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS -- V --1.8 --2.0 0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 40 35 30 --40mA 25 ID= --20mA 20 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V --9 --10 IT00105 --4 --5 --6 IT00104 VGS= --10V 7 5 3 Ta=75°C 2 25°C --25°C 15 10 --2 --3 RDS(on) -- ID 100 Ta=25°C 45 --1 Gate-to-Source Voltage, VGS -- V IT00103 RDS(on) -- VGS 50 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ta= -- --6 .0 --0.12 . --4 .0V --0.05 --1 0 Drain Current, ID -- A --0.06 V --8 . 0V --0.07 25°C P.G 10 --0.01 2 3 5 7 --0.1 Drain Current, ID -- A 2 3 IT00106 No.6642-2/4 5HP01N RDS(on) -- ID 1000 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 5 3 2 25°C 100 7 5 Ta=75°C 3 RDS(on) -- Ta 40 VGS= --4V 2 35 30 4V = -V GS A, 10V = -20m S = -G ,V ID mA --40 = ID 25 20 15 10 5 --25°C 10 --0.01 2 3 5 7 2 --0.1 Drain Current, ID -- A 7 0 20 40 60 80 100 120 140 160 IT00108 IF -- VSD 3 VGS = 0 2 0.1 5°C 2 Ta= -- 7 5 25°C 75°C 3 --0.1 7 5 3 Ta=7 5 2 2 2 3 5 7 2 --0.1 Drain Current, ID -- A --0.01 --0.5 3 Ciss, Coss, Crss -- pF tf 100 7 5 td(off) 3 2 td(on) 10 7 5 tr --0.8 --0.9 --1.0 --1.1 3 2 --1.2 IT00110 Ciss, Coss, Crss -- VDS 100 7 5 VDD= --25V VGS= --10V 3 2 --0.7 Diode Forward Voltage, VSD -- V IT00109 SW Time -- ID 1000 7 5 --0.6 --25°C 2 25°C 3 °C 5 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S --20 Ambient Temperature, Ta -- °C VDS= --10V 0.01 --0.01 Switching Time, SW Time -- ns --40 IT00107 yfs -- ID 1.0 f=1MHz 3 2 10 7 5 Ciss Coss 3 2 Crss 1.0 7 5 3 2 1.0 --0.01 0.1 2 3 5 7 Drain Current, ID -- A 0 --0.1 IT00111 --10 --15 Allowable Power Dissipation, PD -- W --8 --7 --6 --5 --4 --3 --2 --1 0 --20 --25 --30 --35 --40 --45 --50 IT00112 PD -- Ta 0.5 VDS= --10V ID= --0.07A --9 --5 Drain-to-Source Voltage, VDS -- V VGS -- Qg --10 Gate-to-Sourse Voltage, VGS -- V 0 --60 3 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00113 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02383 No.6642-3/4 5HP01N Note on usage : Since the 5HP01N is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2000. Specifications and information herein are subject to change without notice. PS No.6642-4/4