SANGDEST MICROELECTRONICS ES1A-ES1M 1.0A SURFACE MOUNT SUPER FAST RECTIFIER Technical Data Data Sheet N0159, Rev. D Green Products ES1A-ES1M SURFACE MOUNT SUPER FAST RECTIFIER Features: • • • • • • • • • • Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Overload Drop, High Efficiency Surge Overload Rating to 30A Peak Low Power Loss Super-Fast Recovery Time Plastic Case Material has UL Flammability Classification Rating 94V-O This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Data: • • • • • Case: Low Profile Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.06 grams(approx) ES1A Mechanical Dimensions: In mm/ Inches SMA MARKING, MOLDING RESIN st nd Marking for ES1A/B/C/D/E/G/J/K/M, 1 row ES1A/B/C/D/E/G/J/K/M, 2 row YYWWL Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http:// www.smc-diodes.com • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS ES1A-ES1M 1.0A SURFACE MOUNT SUPER FAST RECTIFIER Technical Data Data Sheet N0159, Rev. D Green Products Ordering Information: Device Package SMA (Pb-Free) ES1(A-M) Shipping 5000pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified Single Phase half wave 60Hz, resistive or inductive load. For capacitive load current derate by 20%. Characteristic Peak Repetitive Reverse Voltage RMS Reverse Voltage Average Rectified Output Current @TL =120°C Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward voltage @IF =1.0A Symbol ES1A ES1B ES1C ES1D ES1E ES1G ES1J ES1K ES1M VRRM 50 100 150 200 300 400 600 800 1000 VR(RMS) 34 70 105 140 210 280 420 560 700 Units V Io 1.0 V IFSM 50 A VF 0.95 1.3 1.7 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IR 10 350 µA Typical junction capacitance (Note 1) CJ 45.0 pF Reverse Recovery Time (Note 2) Trr 35 ns Electro-Static Discharge ESD 2000 V Typical thermal resistance (Note 3) RθJL Operating Junction and Storage Temperature T ,T J STG Range Case Style 35 K/W -55 to +150 °C SMA Note: 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 VDC 2. Measured with IF=0.5A, IR=1.0A, Irr=0.25A, 3. Mounted on P.C. Board with 8.0mm2 lead area • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http:// www.smc-diodes.com • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N0159, Rev. D ES1A-ES1M 1.0A SURFACE MOUNT SUPER FAST RECTIFIER Green Products • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http:// www.smc-diodes.com • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N0159, Rev. D ES1A-ES1M 1.0A SURFACE MOUNT SUPER FAST RECTIFIER Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http:// www.smc-diodes.com • E-Mail Address - sales@ sangdest.com.cn •