SHINDENGEN VX-2 Series Power MOSFET 2SK2475 (F12F50VX2) N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 500V 12A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input High voltage power supply Inverter www RATINGS Absolute Maximum Ratings iTc = 25j Item Symbol Conditions Storage Temperature T stg T ch Channel Temperature VDSS Drain Source Voltage VGSS Gate Source Voltage ID Continuous Drain CurrentiDCj I DP Continuous Drain CurrentiPeak) Continuous Source CurrentiDCj IS Total Power Dissipation PT I AS Single Pulse Avalanche Current T ch = 25 Vdis Terminals to case, AC 1 minute Dielectric Strength TOR i Recommended torque : 0.3N¥m j Mounting Torque Ratings -55`150 150 500 }30 12 36 12 50 12 2 0.5 Unit V A W A u NE 2SK2475 ( F12F50VX2 ) VX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage I DSS Zero Gate Voltage Drain Current I GSS Gate-Source Leakage Current Forward Tranconductance gfs Static Drain-Source On-tate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forwade Voltage Æjc Themal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance C oss Turn-On Time ton toff Turn-Off Time Conditions I D = 1mA, VGS = 0V VDS = 500V, VGS = 0V VGS = }30V, VDS = 0V I D = 6A, VDS = 10V I D = 6A, VGS = 10V I D = 1mA, VDS = 10V I S = 6A, VGS = 0V junction to case VDD = 400V, VGS = 10V, I D = 12A VDS = 10V, VGS = 0V, f = 1MHZ I D = 6A, VGS = 10V, RL = 25¶ Min. 500 Typ. 3. 0 7. 6 0. 55 3. 0 2. 5 42 1200 90 270 90 190 Max. 250 }0. 1 0. 7 3. 5 1. 5 2. 5 Unit V ÊA S ¶ V /v nC pF 130 280 ns 2SK2475 Transfer Characteristics 25 Tc = −55°C 25°C Drain Current ID [A] 20 100°C 15 150°C 10 5 0 VDS = 25V pulse test TYP 0 5 10 15 Gate-Source Voltage VGS [V] 20 Static Drain-Source On-state Resistance RDS(ON) [Ω] 2SK2475 Static Drain-Source On-state Resistance 1 ID = 6A 0.1 VGS = 10V pulse test TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK2475 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 5 4 3 2 1 0 VDS = 10V ID = 1mA TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK2475 Safe Operating Area 100 10 Drain Current ID [A] 100µs 200µs R DS(ON) limit 1ms 1 10ms DC 0.1 Tc = 25°C Single Pulse 0.01 1 10 100 Drain-Source Voltage VDS [V] 1000 Transient Thermal Impedance θjc(t) [°C/W] 0.01 10-4 0.1 1 10 10-3 10-2 2SK2475 Time t [s] 10-1 100 Transient Thermal Impedance 101 102 2SK2475 Capacitance Ciss Capacitance Ciss Coss Crss [pF] 1000 Coss 100 Crss Tc=25°C TYP 10 0 20 40 60 80 Drain-Source Voltage VDS [V] 100 2SK2475 Power Derating 100 Power Derating [%] 80 60 40 20 0 0 50 100 Case Temperature Tc [°C] 150 2SK2475 Gate Charge Characteristics 20 400 VDS 15 VDD = 400V 300 200V 100V 10 VGS 200 5 100 ID = 12A 0 0 20 40 60 Gate Charge Qg [nC] 80 0 100 Gate-Source Voltage VGS [V] Drain-Source Voltage VDS [V] 500