Jiangsu FBAT54CDW Surface mount schottky barrier diode array Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diodes
WBFBP-06C
FBAT54CDW
(2×2×0.5)
unit: mm
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
DESCRIPTION
Silicon epitaxial planar
PN Junction Guard Ring for Schottky Diode
1
FEATURES
z
Low Forward Voltage Drop
z
Fast Switching SCHOTTKY DIODE
APPLICATION
Ultra high speed switching, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
FBAT54CDW
Marking:KL7
Maximum Ratings @TA=25℃
Parameter
Peak Repetitive reverse voltage
DC Blocking Voltage
Symbol
Limits
Unit
VRM
VR
30
V
mA
Average Rectified Output Current
IO
Power Dissipation
PD
100
150
TJ
125
℃
TSTG
-65-125
℃
Junction temperature
Storage temperature range
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Reverse breakdown voltage
Reverse voltage
Forward
Total
leakage current
voltage
capacitance
Reverse recovery time
Symbol
V(BR)
IR
VF
CT
t rr
unless
Test
otherwise
conditions
IR= 100μA
VR=25V
mW
specified)
MIN
MAX
30
V
2
IF=0.1mA
240
IF=1mA
320
IF=10mA
400
IF=30mA
500
IF=100mA
1000
VR=1V,f=1MHz
IF=10mA, IR=10mA~1mA
RL=100Ω
UNIT
uA
mV
10
pF
5
nS
Typical Characteristics
Symbol
A
A1
b
D
E
D1
E1
e
L
k
z
Dimensions In Millimeters
Min.
Max.
0.450
0.550
0.000
0.100
0.150
0.250
1.900
2.100
1.900
2.100
0.420 REF.
0.800 REF.
0.650 TYP.
0.400 REF.
0.350 REF.
0.500 REF.
Dimensions In Inches
Min.
Max.
0.018
0.022
0.000
0.004
0.006
0.010
0.075
0.083
0.075
0.083
0.017 REF.
0.032 REF.
0.026 TYP.
0.016 REF.
0.014 REF.
0.020 REF.
APPLICATION CIRCUITS
Bridge rectifiers
Similar pages