Chenmko FBM25PT Fast recovery silicon rectifier Datasheet

FBM21PT
CHENMKO ENTERPRISE CO.,LTD
THRU
SURFACE MOUNT GLASS PASSIVATED
FAST RECOVERY SILICON RECTIFIER
VOLTAGE RANGE 50 - 1000 Volts CURRENT 2.0 Amperes
FBM27PT
FEATURES
*
*
*
*
*
Low leakage current
Ideal for surface mounted applications
Metallurgically bonded construction
Fast recovery times for high efficiency
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
* Glass passivated junction
* High temperature soldering guaranteed :
260oC/10 seconds at terminals
SMB
0.083 (2.11)
0.077 (1.96)
0.155 (3.94)
0.130 (3.30)
MECHANICAL DATA
Case: JEDEC SMA molded plastic
Polarity: Indicated by cathode band
(2)
(1)
0.190 (4.75)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.220 (5.59)
0.205 (5.21)
Ratings at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
SMB
Dimensions in inches and (millimeters)
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
SYMBOL
FBM21PT FBM22PT FBM23PT FBM24PT FBM25PT FBM26PT FBM27PT
UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
Volts
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
Volts
o
Maximum Average Forward Rectified Current TL = 90 C
IO
2.0
Amps
IFSM
60
Amps
CJ
40
pF
TJ, TSTG
-65 to +150
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
o
C
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
CHARACTERISTICS
UNITS
SYMBOL
FBM21PT FBM22PT FBM23PT FBM24PT FBM25PT FBM26PT FBM27PT
VF
1.3
Volts
5.0
uAmps
100
uAmps
Maximum Instantaneous Forward Voltage at 2.0 A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage at TA = 25oC
Maximum Full Load Reverse Current Average,
Full Cycle at TA = 55oC
Maximum Reverse Recovery Time (Note 2)
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts
2. Test Conditions : IF = 0.5 A, IR = -1.0 A, IRR = -0.25 A
IR
trr
150
250
500
nSec
2002-5
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(-)
D.U.T
(+)
0
PULSE
GENERATOR
(NOTE 2)
25 Vdc
(approx)
(-)
1
NONINDUCTIVE
OSCILLOSCOPE
(NOTE 1)
-0.25A
(+)
-1.0A
1cm
NOTES: 1. Rise Time = 7 ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10 ns max. Source Impedlance=
50 ohms.
SET TIME BASE FOR
50/100 nS/cm
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
3.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
2.5
2.0
1.5
1.0
0.5
0
0
25 50 75 100 125 150 175
LEAD TEMPERATURE ( OC )
10
INSTANTANEOUS FORWARD CURRENT, ( A )
INSTANTANEOUS REVERSE CURRENT, (uA)
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
10
4.0
TJ =100oC
1.0
.4
.1
.04
TJ =25oC
Pulse Width = 300uS
1% Duty Cycle
1.0
0.1
TJ =25oC
.01
0
.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % )
0
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
.2
.4
.6
.8
1.0
1.2 1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE, ( V )
1.8
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
70
200
60
JUNCTION CAPACITANCE, ( pF )
PEAK FORWARD SURGE CURRENT, ( A )
AVERAGE FORWARD CURRENT, ( A )
RATING CHARACTERISTIC CURVES ( FBM21PT THRU FBM27PT )
8.3ms Single Half Sine-Wave
(JEDEC Method)
50
40
30
20
10
0
100
60
40
20
10
TJ =25oC
6
4
2
1
1
2
5
10
20
NUMBER OF CYCLES AT 60 Hz
50
100
.1
.2
.4
1.0
2
4
10
20
REVERSE VOLTAGE, ( V )
40
100
Similar pages