Fairchild FCP11N60N N-channel mosfet 600v, 10.8a, 0.299î© Datasheet

SupreMOSTM
FCP11N60N / FCPF11N60NT
tm
N-Channel MOSFET
600V, 10.8A, 0.299Ω
Features
Description
• RDS(on) = 0.255Ω ( Typ.)@ VGS = 10V, ID = 5.4A
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
• Ultra Low Gate Charge ( Typ. Qg = 27.4nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
D
G D S
G
TO-220
FCP Series
TO-220F
FCPF Series
GD S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
(Note 1)
Units
V
±30
V
10.8
10.8*
6.8
6.8*
IDM
Drain Current
Single Pulsed Avalanche Energy
IAR
Avalanche Current
3.7
A
EAR
Repetitive Avalanche Energy
0.94
mJ
(Note 2)
Peak Diode Recovery dv/dt
(Note 3)
(TC = 25oC)
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
- Derate above 25oC
32.4*
A
201.7
MOSFET dv/dt Ruggedness
PD
TL
32.4
A
EAS
dv/dt
- Pulsed
FCP11N60N FCPF11N60NT
600
mJ
100
V/ns
20
V/ns
94.0
32.1
W
0.75
0.26
W/oC
-55 to +150
o
C
300
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FCP11N60N FCPF11N60NT
RθJC
Thermal Resistance, Junction to Case
1.33
3.9
RθCS
Thermal Resistance, Case to Heat Sink (Typical)
0.5
0.5
RθJA
Thermal Resistance, Junction to Ambient
62.5
62.5
©2009 Fairchild Semiconductor Corporation
FCP11N60N / FCPF11N60NT Rev. A
1
Units
o
C/W
www.fairchildsemi.com
FCP11N60N / FCPF11N60NT N-Channel MOSFET
August 2009
Device Marking
FCP11N60N
Device
FCP11N60N
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
FCPF11N60NT
FCPF11N60NT
TO-220F
-
-
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
ID = 1mA, VGS = 0V, TC = 25oC
600
-
-
V
ID = 1mA, Referenced to 25oC
-
0.73
-
V/oC
VDS = 480V, VGS = 0V
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
-
-
10
VDS = 480V, VGS = 0V, TC = 125oC
-
-
100
VGS = ±30V, VDS = 0V
-
-
±100
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
2.0
-
4.0
V
Static Drain to Source On Resistance
VGS = 10V, ID = 5.4A
-
0.255
0.299
Ω
gFS
Forward Transconductance
VDS = 40V, ID = 5.4A
-
13.5
-
S
VDS = 100V, VGS = 0V
f = 1MHz
-
1130
1505
pF
-
45
60
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-
3
5
pF
Coss
Output Capacitance
VDS = 380V, VGS = 0V, f = 1MHz
-
25
-
pF
Cosseff.
Effective Output Capacitance
VDS = 0V to 480V, VGS = 0V
-
130
-
pF
Qg(tot)
Total Gate Charge at 10V
-
27.4
35.6
nC
Qgs
Gate to Source Gate Charge
-
4.9
-
nC
Qgd
Gate to Drain “Miller” Charge
-
8.8
-
nC
ESR
Equivalent Series Resistance (G-S)
VDS = 380V, ID = 5.4A,
VGS = 10V
(Note 4)
Drain Open
Ω
2.0
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 380V, ID = 5.4A
RG = 4.7Ω
(Note 4)
-
13.6
37.2
-
9.1
28.2
ns
ns
-
42.0
94.0
ns
-
10.0
30.0
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
10.8
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
32.4
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 5.4A
-
-
1.2
V
trr
Reverse Recovery Time
-
268
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 5.4A
dIF/dt = 100A/μs
-
3.1
-
μC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 3.7A, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 10.8A, di/dt ≤ 200A/μs, VDD = 380V, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
FCP11N60N / FCPF11N60NT Rev. A
2
www.fairchildsemi.com
FCP11N60N / FCPF11N60NT N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
60
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
10
ID, Drain Current[A]
ID, Drain Current[A]
100
1
10
o
o
150 C
25 C
o
-55 C
1
*Notes:
1. 250μs Pulse Test
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
o
0.1
0.1
2. TC = 25 C
1
VDS, Drain-Source Voltage[V]
10
0.1
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.6
IS, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
8
100
0.5
VGS = 10V
0.4
VGS = 20V
0.3
o
*Notes: TC = 25 C
0
8
16
24
ID, Drain Current [A]
o
150 C
10
o
25 C
*Notes:
1. VGS = 0V
1
0.4
32
2. 250μs Pulse Test
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
1.4
Figure 6. Gate Charge Characteristics
6000
10
4000
Coss
*Notes:
1. VGS = 0V
2. f = 1MHz
2000
Ciss
VGS, Gate-Source Voltage [V]
Figure 5. Capacitance Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Capacitances [pF]
4
6
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.7
0.2
2
8
VDS = 120V
VDS = 300V
VDS = 480V
6
4
2
Crss
0
0.1
1
10
100
VDS, Drain-Source Voltage [V]
FCP11N60N / FCPF11N60NT Rev. A
0
600
3
*Notes: ID = 5.4A
0
5
10
15
20
25
Qg, Total Gate Charge [nC]
30
www.fairchildsemi.com
FCP11N60N / FCPF11N60NT N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 1mA
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.0
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
20μs
100μs
1ms
10ms
DC
Operation in This Area
is Limited by R DS(on)
*Notes:
0.1
o
1ms
Operation in This Area
is Limited by R DS(on)
10
100
VDS, Drain-Source Voltage [V]
DC
*Notes:
o
1. TC = 25 C
o
1
10ms
1
0.1
1. TC = 25 C
100μs
10
2. TJ = 150 C
3. Single Pulse
0.01
0.1
*Notes:
1. VGS = 10V
2. ID = 5.4A
0.5
100
ID, Drain Current [A]
ID, Drain Current [A]
1.5
Figure 10. Maximum Safe Operating Area
_ FCPF11N60NT
20μs
10
1
2.0
0.0
-100
200
Figure 9. Maximum Safe Operating Area
_ FCP11N60N
50
2.5
o
0.01
0.1
1000
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Maximum Drain Current
vs. Case Temperature
ID, Drain Current [A]
12
9
6
3
0
25
50
75
100
125
o
TC, Case Temperature [ C]
FCP11N60N / FCPF11N60NT Rev. A
150
4
www.fairchildsemi.com
FCP11N60N / FCPF11N60NT N-Channel MOSFET
Typical Performance Characteristics (Continued)
FCP11N60N / FCPF11N60NT N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve _ FCP11N60N
Thermal Response [ZθJC]
2
1
0.5
0.2
PDM
0.1
0.1
t1
0.05
t2
*Notes:
0.02
o
1. ZθJC(t) = 1.33 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01
Single pulse
0.01
-5
10
-4
-3
10
-2
-1
10
10
Rectangular Pulse Duration [sec]
10
1
Figure 13. Transient Thermal Response Curve _ FCPF11N60NT
Thermal Response [ZθJC]
5
0.5
1
0.2
0.1
PDM
0.05
0.1
t1
0.02
*Notes:
0.01
o
1. ZθJC(t) = 3.3 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
-5
10
FCP11N60N / FCPF11N60NT Rev. A
t2
-4
10
-3
10
-2
-1
10
10
1
Rectangular Pulse Duration [sec]
5
10
2
10
3
10
www.fairchildsemi.com
FCP11N60N / FCPF11N60NT N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCP11N60N / FCPF11N60NT Rev. A
6
www.fairchildsemi.com
FCP11N60N / FCPF11N60NT N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
V GS
( D r iv e r )
G S
G
S am e T ype
as DUT
V
DD
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id th
D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT )
d i/ d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v / d t
V
V
SD
DD
B o d y D io d e
F o r w a r d V o lt a g e D r o p
FCP11N60N / FCPF11N60NT Rev. A
7
www.fairchildsemi.com
FCP11N60N / FCPF11N60NT N-Channel MOSFET
Mechanical Dimensions
TO-220
Dimensions in Millimeters
FCP11N60N / FCPF11N60NT Rev. A
8
www.fairchildsemi.com
FCP11N60N / FCPF11N60NT N-Channel MOSFET
Mechanical Dimensions
TO-220F
Dimensions in Millimeters
FCP11N60N / FCPF11N60NT Rev. A
9
www.fairchildsemi.com
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I41
FCP11N60N / FCPF11N60NT Rev. A
10
www.fairchildsemi.com
FCP11N60N / FCPF11N60NT N-Channel MOSFET
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