SupreMOSTM FCP11N60N / FCPF11N60NT tm N-Channel MOSFET 600V, 10.8A, 0.299Ω Features Description • RDS(on) = 0.255Ω ( Typ.)@ VGS = 10V, ID = 5.4A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. • Ultra Low Gate Charge ( Typ. Qg = 27.4nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant D G D S G TO-220 FCP Series TO-220F FCPF Series GD S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current -Continuous (TC = 25oC) -Continuous (TC = 100oC) (Note 1) Units V ±30 V 10.8 10.8* 6.8 6.8* IDM Drain Current Single Pulsed Avalanche Energy IAR Avalanche Current 3.7 A EAR Repetitive Avalanche Energy 0.94 mJ (Note 2) Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds - Derate above 25oC 32.4* A 201.7 MOSFET dv/dt Ruggedness PD TL 32.4 A EAS dv/dt - Pulsed FCP11N60N FCPF11N60NT 600 mJ 100 V/ns 20 V/ns 94.0 32.1 W 0.75 0.26 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCP11N60N FCPF11N60NT RθJC Thermal Resistance, Junction to Case 1.33 3.9 RθCS Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2009 Fairchild Semiconductor Corporation FCP11N60N / FCPF11N60NT Rev. A 1 Units o C/W www.fairchildsemi.com FCP11N60N / FCPF11N60NT N-Channel MOSFET August 2009 Device Marking FCP11N60N Device FCP11N60N Package TO-220 Reel Size - Tape Width - Quantity 50 FCPF11N60NT FCPF11N60NT TO-220F - - 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units ID = 1mA, VGS = 0V, TC = 25oC 600 - - V ID = 1mA, Referenced to 25oC - 0.73 - V/oC VDS = 480V, VGS = 0V Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current - - 10 VDS = 480V, VGS = 0V, TC = 125oC - - 100 VGS = ±30V, VDS = 0V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA 2.0 - 4.0 V Static Drain to Source On Resistance VGS = 10V, ID = 5.4A - 0.255 0.299 Ω gFS Forward Transconductance VDS = 40V, ID = 5.4A - 13.5 - S VDS = 100V, VGS = 0V f = 1MHz - 1130 1505 pF - 45 60 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 3 5 pF Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 25 - pF Cosseff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 130 - pF Qg(tot) Total Gate Charge at 10V - 27.4 35.6 nC Qgs Gate to Source Gate Charge - 4.9 - nC Qgd Gate to Drain “Miller” Charge - 8.8 - nC ESR Equivalent Series Resistance (G-S) VDS = 380V, ID = 5.4A, VGS = 10V (Note 4) Drain Open Ω 2.0 Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380V, ID = 5.4A RG = 4.7Ω (Note 4) - 13.6 37.2 - 9.1 28.2 ns ns - 42.0 94.0 ns - 10.0 30.0 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 10.8 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 32.4 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 5.4A - - 1.2 V trr Reverse Recovery Time - 268 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 5.4A dIF/dt = 100A/μs - 3.1 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 3.7A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 10.8A, di/dt ≤ 200A/μs, VDD = 380V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics FCP11N60N / FCPF11N60NT Rev. A 2 www.fairchildsemi.com FCP11N60N / FCPF11N60NT N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 60 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 10 ID, Drain Current[A] ID, Drain Current[A] 100 1 10 o o 150 C 25 C o -55 C 1 *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 0.1 0.1 2. TC = 25 C 1 VDS, Drain-Source Voltage[V] 10 0.1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.6 IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 8 100 0.5 VGS = 10V 0.4 VGS = 20V 0.3 o *Notes: TC = 25 C 0 8 16 24 ID, Drain Current [A] o 150 C 10 o 25 C *Notes: 1. VGS = 0V 1 0.4 32 2. 250μs Pulse Test 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 6. Gate Charge Characteristics 6000 10 4000 Coss *Notes: 1. VGS = 0V 2. f = 1MHz 2000 Ciss VGS, Gate-Source Voltage [V] Figure 5. Capacitance Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Capacitances [pF] 4 6 VGS, Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.7 0.2 2 8 VDS = 120V VDS = 300V VDS = 480V 6 4 2 Crss 0 0.1 1 10 100 VDS, Drain-Source Voltage [V] FCP11N60N / FCPF11N60NT Rev. A 0 600 3 *Notes: ID = 5.4A 0 5 10 15 20 25 Qg, Total Gate Charge [nC] 30 www.fairchildsemi.com FCP11N60N / FCPF11N60NT N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.0 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 20μs 100μs 1ms 10ms DC Operation in This Area is Limited by R DS(on) *Notes: 0.1 o 1ms Operation in This Area is Limited by R DS(on) 10 100 VDS, Drain-Source Voltage [V] DC *Notes: o 1. TC = 25 C o 1 10ms 1 0.1 1. TC = 25 C 100μs 10 2. TJ = 150 C 3. Single Pulse 0.01 0.1 *Notes: 1. VGS = 10V 2. ID = 5.4A 0.5 100 ID, Drain Current [A] ID, Drain Current [A] 1.5 Figure 10. Maximum Safe Operating Area _ FCPF11N60NT 20μs 10 1 2.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area _ FCP11N60N 50 2.5 o 0.01 0.1 1000 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 11. Maximum Drain Current vs. Case Temperature ID, Drain Current [A] 12 9 6 3 0 25 50 75 100 125 o TC, Case Temperature [ C] FCP11N60N / FCPF11N60NT Rev. A 150 4 www.fairchildsemi.com FCP11N60N / FCPF11N60NT N-Channel MOSFET Typical Performance Characteristics (Continued) FCP11N60N / FCPF11N60NT N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve _ FCP11N60N Thermal Response [ZθJC] 2 1 0.5 0.2 PDM 0.1 0.1 t1 0.05 t2 *Notes: 0.02 o 1. ZθJC(t) = 1.33 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 Single pulse 0.01 -5 10 -4 -3 10 -2 -1 10 10 Rectangular Pulse Duration [sec] 10 1 Figure 13. Transient Thermal Response Curve _ FCPF11N60NT Thermal Response [ZθJC] 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 *Notes: 0.01 o 1. ZθJC(t) = 3.3 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 FCP11N60N / FCPF11N60NT Rev. A t2 -4 10 -3 10 -2 -1 10 10 1 Rectangular Pulse Duration [sec] 5 10 2 10 3 10 www.fairchildsemi.com FCP11N60N / FCPF11N60NT N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCP11N60N / FCPF11N60NT Rev. A 6 www.fairchildsemi.com FCP11N60N / FCPF11N60NT N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FCP11N60N / FCPF11N60NT Rev. A 7 www.fairchildsemi.com FCP11N60N / FCPF11N60NT N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters FCP11N60N / FCPF11N60NT Rev. A 8 www.fairchildsemi.com FCP11N60N / FCPF11N60NT N-Channel MOSFET Mechanical Dimensions TO-220F Dimensions in Millimeters FCP11N60N / FCPF11N60NT Rev. A 9 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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