FDC2612 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. • 1.1 A, 200 V. Applications • High power and current handling capability RDS(ON) = 725 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • Fast switching speed • DC/DC converter • Low gate charge (8nC typical) D D S SuperSOT TM-6 D D 6 2 5 3 4 G Absolute Maximum Ratings Symbol 1 TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 200 V VGSS Gate-Source Voltage ± 20 V ID Drain Current (Note 1a) 1.1 A PD Maximum Power Dissipation (Note 1a) 1.6 (Note 1b) 0.8 – Continuous – Pulsed TJ, TSTG 4 Operating and Storage Junction Temperature Range W −55 to +150 °C (Note 1a) 78 °C/W (Note 1) 30 °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .262 FDC2612 7’’ 8mm 3000 units 2002 Fairchild Semiconductor Corporation FDC2612 Rev B3 (W) FDC2612 February 2002 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics ID = 250 µA 200 V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 160 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V , VDS = 0 V –100 nA 4.5 V On Characteristics VGS(th) ∆VGS(th) ∆TJ VGS = 0 V, ID = 250 µA, Referenced to 25°C mV/°C (Note 2) ID = 250 µA VDS = VGS, ID = 250 µA, Referenced to 25°C ID(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On Resistance On–State Drain Current VGS = 10 V, ID = 1.1 A VGS = 10 V, ID = 1.1 A, TJ = 125°C VGS = 10 V, VDS = 10 V gFS Forward Transconductance VDS = 10 V, RDS(on) 246 2 4 –8.7 605 1133 mV/°C 725 1430 mΩ 4 ID = 1.1 A A 4.4 S Dynamic Characteristics VDS = 100 V, f = 1.0 MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time V GS = 0 V, 234 pF 18 pF 8 pF (Note 2) VDD = 100 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 6 12 ns 6 12 ns ns td(off) Turn–Off Delay Time 17 30 tf Turn–Off Fall Time 8 16 ns Qg Total Gate Charge 8 11 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 100 V, VGS = 10 V ID = 1.1 A, 1.6 nC 2.2 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 1.3 A(Note 2) Voltage Diode Reverse Recovery Time IF = 1.1A, (Note 2) diF/dt = 300 A/µs Diode Reverse Recovery Charge 1.3 0.8 1.2 74.5 194 A V nS nC Notes: 1.RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 1in2 pad of 2 oz copper b) 156°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDC2612 Rev B3(W) FDC2612 Electrical Characteristics FDC2612 Typical Characteristics 1.4 VGS = 10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4 6.0V ID, DRAIN CURRENT (A) 6.5V 3 5.5V 2 1 1.3 VGS = 4.0V 1.2 4.5V 1.1 0 10V 1 2 4 6 8 0 10 1 2 3 4 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2.6 1.5 ID = 0.6A ID = 1.1A VGS =10V 2.2 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6.0V 0.9 0 1.8 1.4 1 0.6 0.2 -50 -25 0 25 50 75 100 125 1.3 1.1 TA = 125oC 0.9 0.7 TA = 25oC 0.5 150 4 o 5 TJ, JUNCTION TEMPERATURE ( C) 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 IS, REVERSE DRAIN CURRENT (A) 8 VDS = 25V ID, DRAIN CURRENT (A) 5.0V 6 4 TA = 125oC 2 25oC -55oC VGS = 0V 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001 0 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 7 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC2612 Rev B3(W) 350 ID = 1.1A 100V VDS = 50V CISS 150V 9 6 250 200 150 100 COSS 3 50 CRSS 0 0 0 2 4 6 8 10 0 25 Qg, GATE CHARGE (nC) 50 100 125 150 Figure 8. Capacitance Characteristics. 10 P(pk), PEAK TRANSIENT POWER (W) 40 100µs RDS(ON) LIMIT 1ms 1 10ms 100ms 0.1 DC 1s VGS = 10V SINGLE PULSE RθJA = 156oC/W 0.01 o TA = 25 C 0.001 0.1 1 10 100 1000 SINGLE PULSE RθJA = 156°C/W TA = 25°C 30 20 10 0 0.001 0.01 0.1 1 VDS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 75 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V 300 12 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 15 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 156°C/W 0.2 0.1 P(pk) 0.1 t1 0.05 0.02 0.01 0.01 0.0001 0.001 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDC2612 Rev B3(W) FDC2612 Typical Characteristics TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4