Fairchild FDC6327C Dual n & p-channel 2.5v specified powertrenchtm mosfet Datasheet

FDC6327C
Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
Features
These N & P-Channel 2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low gate
charge for superior switching performance.
•
•
P-Channel -1.6A, -20V.RDS(on) = 0.17Ω @ VGS = -4.5V
These devices have been designed to offer exceptional power
dissipation in a very small footprint for applications where
the bigger more expensive SO-8 and TSSOP-8 packages
are impractical.
•
Fast switching speed.
•
Low gate charge.
•
High performance trench technology for extremely
low RDS(ON).
•
SuperSOTTM-6 package: small footprint (72% smaller
than SO-8); low profile (1mm thick).
Applications
• DC/DC converter
• Load switch
• Motor driving
N-Channel 2.7A, 20V. RDS(on) = 0.08Ω @ VGS = 4.5V
RDS(on) = 0.12Ω @ VGS = 2.5V
RDS(on)= 0.25Ω @ VGS = -2.5V
D2
S1
4
3
5
2
6
1
D1
G2
SuperSOT
TM
S2
-6
G1
Absolute Maximum Ratings
Symbol
TA = 25°C unless otherwise noted
Parameter
N-Channel
P-Channel
Units
VDSS
Drain-Source Voltage
20
-20
V
VGSS
Gate-Source Voltage
Drain Current
±8
-1.9
V
ID
±8
2.7
8
-8
- Continuous
(Note 1a)
- Pulsed
PD
Power Dissipation
(Note 1a)
0.96
(Note 1b)
0.9
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
A
W
0.7
-55 to +150
°C
°C/W
°C/W
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
130
Thermal Resistance, Junction-to-Case
(Note 1)
60
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
.327
FDC6327C
7”
8mm
3000
1999 Fairchild Semiconductor Corporation
FDC6327C, Rev. E
FDC6327C
July 2000
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
ID = 250 µA, Referenced to 25°C
ID = - 250 µA, Referenced to 25°C
VDS = 16 V, VGS = 0 V
VDS = -16 V, VGS = 0 V
VGS = 8 V, VDS = 0 V
IGSSF
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage, Forward
IGSSR
Gate-Body Leakage, Reverse VGS = -8 V, VDS = 0 V
∆BVDSS
∆TJ
IDSS
On Characteristics
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
All
20
-20
V
mV/°C
12
-19
All
1
-1
100
µA
-100
nA
1.5
-1.5
V
nA
(Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
VDS = VGS, ID = -250 µA
ID = 250 µA, Referenced to 25°C
ID = - 250 µA, Referenced to 25°C
VGS = 4.5 V, ID = 2.7 A
VGS = 4.5 V, ID = 2.7 A, TJ = 125°C
VGS = 2.5 V, ID = 2.2 A
VGS = -4.5 V, ID = -1.6 A
VGS = -4.5 V, ID = -1.6 A, TJ = 125°C
VGS = -2.5 V, ID = -1.3 A
VGS = 4.5 V, VDS = 5 V
VGS = -4.5 V, VDS = -5 V
VDS = 5 V, ID = 2.7 A
VDS = -5 V, ID = -1.9 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Ch
N-Ch
P-Ch
P-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Channel
VDS = 10 V, VGS = 0 V, f = 1.0 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.4
-0.4
0.9
-0.9
-2.1
2.3
0.069
0.094
0.093
0.141
0.203
0.205
8
-8
mV/°C
0.08
0.13
0.12
0.17
0.27
0.25
Ω
A
7.7
4.5
S
325
315
75
65
35
24
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
P-Channel
Reverse Transfer Capacitance VDS = 10 V, VGS = 0 V, f = 1.0 MHz
pF
pF
FDC6327C, Rev. E
FDC6327C
Electrical Characteristics
Symbol
Parameter
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
(continued)
TA = 25°C unless otherwise noted
Test Conditions
Type Min
Typ
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
5
7
9
14
12
14
3
3
3.25
2.85
0.65
0.68
0.90
0.65
Max Units
(Note 2)
Gate-Drain Charge
N-Channel
VDD = 10 V, ID = 1 A,
VGS = 4.5V, RGEN = 6 Ω
P-Channel
VDD = -10 V, ID = -1 A,
VGS = -4.5 V, RGEN = 6 Ω
N-Channel
VDS = 10 V, ID = 2.7 A, VGS = 4.5V
P-Channel
VDS = -10 V, ID = -1.9 A,VGS = -4.5V
15
14
18
25
22
25
9
9
4.5
4.0
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward VGS = 0 V, IS = 0.8 A (Note 2)
Voltage
VGS = 0 V, IS = - 0.8 A (Note 2)
N-Ch
P-Ch
N-Ch
P-Ch
0.76
-0.79
0.8
-0.8
1.2
-1.2
A
V
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user's board design. Both devices are assumed to be operating and sharing the dissipated heat energy
equally.
a) 130 °C/W when
mounted on a 0.125 in2
pad of 2 oz. copper.
b) 140 °C/W when
mounted on a 0.005 in2
pad of 2 oz. copper.
c) 180 °C/W when
mounted on a 0.0015 in2
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDC6327C, Rev. E
FDC6327C
Electrical Characteristics
FDC6327C
Typical Characteristics: N-Channel
2.4
10
VGS = 4.5V
3.0V
2.5V
8
2.2
2
VGS = 2.0V
1.8
6
1.6
2.0V
4
1.4
2.5V
1.2
3.0V
2
3.5V
4.5V
1
1.5V
0.8
0
0
1
2
3
0
4
2
4
Figure 1. On-Region Characteristics.
RDS(ON), NORMALIZED DRAIN-SOURCE
ON-RESISTANCE
6
8
10
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.25
1.6
ID = 1.3A
ID = 2.7A
VGS = 4.5V
1.5
0.2
1.4
1.3
0.15
1.2
o
TA = 125 C
1.1
0.1
1
o
TA = 25 C
0.9
0.05
0.8
0.7
-50
-25
0
25
50
75
100
125
150
0
1
2
o
TJ, JUNCTION TEMPERATURE ( C)
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
10
10
o
TA = -55 C
VDS = 5V
VGS = 0V
o
25 C
o
125 C
8
1
o
TA = 125 C
o
25 C
0.1
6
o
-55 C
0.01
4
0.001
2
0.0001
0
0
1
2
3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.4
0.8
1.2
1.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDC6327C, Rev. E
(continued)
500
5
VGS, GATE-SOURCE VOLTAGE (V)
FDC6327C
Typical Characteristics: N-Channel
ID = 2.7A
VDS = 5V
f = 1MHz
VGS = 0 V
10V
400
4
15V
3
300
2
200
1
100
0
0
CISS
COSS
CRSS
0
0.5
1
1.5
2
2.5
3
3.5
0
4
4
Figure 7. Gate-Charge Characteristics.
16
20
Figure 8. Capacitance Characteristics.
5
100µs
RDS(ON) LIMIT
12
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
10
8
SINGLE PULSE
o
1ms
RθJA = 180 C/W
4
o
TA = 25 C
10ms
1
100ms
3
1s
DC
2
0.1
VGS = 4.5V
SINGLE PULSE
1
o
RθJA = 180 C/W
o
TA = 25 C
0
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
100
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
FDC6327C, Rev. E
FDC6327C
Typical Characteristics: P-Channel
10
2.4
VGS = -4.5V
2.2
-3.5V
8
-3.0V
VGS = -2.0V
2
1.8
6
-2.5V
-2.5V
1.6
4
1.4
-2.0V
-3.0V
-3.5V
1.2
2
-4.0V
-4.5V
1
-1.5V
0
0.8
0
1
2
3
4
5
0
2
4
-VDS, DRAIN-SOURCE VOLTAGE (V)
6
8
10
-ID, DIRAIN CURRENT (A)
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation
with Drain Current and Gate Voltage.
0.5
1.5
ID = -1.9A
VGS = -4.5V
1.4
ID = -1A
0.4
1.3
1.2
0.3
o
TA = 125 C
1.1
0.2
1
0.9
o
TA = 25 C
0.1
0.8
0.7
0
-50
-25
0
25
50
75
100
125
150
1
2
o
TJ, JUNCTION TEMPERATURE ( C)
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation
with Temperature.
Figure 14. On-Resistance Variation
with Gate-to-Source Voltage.
10
10
VGS = 0V
o
VDS = -5V
TA = -55 C
o
25 C
8
1
o
125 C
o
TA = 125 C
6
0.1
4
0.01
2
0.001
o
25 C
o
-55 C
0
0.0001
0
1
2
3
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
4
0
0.4
0.8
1.2
1.6
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDC6327C, Rev. E
FDC6327C
Typical Characteristics: P-Channel
(continued)
450
5
VDS = -5.0V
ID = -1.9A
f = 1 MHz
VGS = 0 V
400
-10V
4
350
-15V
CISS
300
3
250
200
2
150
100
1
COSS
50
0
CRSS
0
0
0.5
1
1.5
2
2.5
3
0
3.5
4
Qg, GATE CHARGE (nC)
SINGLE PULSE
o
RθJA = 180 C/W
4
o
TA = 25 C
10ms
100ms
DC
20
5
1ms
1
16
Figure 18. Capacitance Characteristics.
100µs
RDS(ON) LIMIT
12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate-Charge Characteristics.
10
8
3
1s
2
0.1
VGS = -4.5V
SINGLE PULSE
1
o
RθJA = 180 C/W
o
TA = 25 C
0
0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
100
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 20. Single Pulse Maximum
Power Dissipation.
FDC6327C, Rev. E
FDC6327C
Typical Characteristics: N & P-Channel
(continued)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
D = 0.5
0.2
0.2
0.1
R θJA (t) = r(t) * R θJA
R θJA = 180°C/W
0.1
P(pk)
0.05
t1
0.05
0.02
0.01
0.0001
0.02
0.01
Single Pulse
0.001
t2
TJ - TA = P * R θJA (t)
Duty Cycle, D = t 1 / t 2
0.01
0.1
t 1, TIME (sec)
1
10
100
300
Figure 21. Transient Thermal Response Curve.
FDC6327C, Rev. E
SuperSOTTM-6 Tape and Reel Data and Package Dimensions
SSOT-6 Packaging
Configuration: Figur e 1.0
Packaging Description:
Customize Label
SSOT-6 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 units per 7" or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13"
or 330cm diameter reel. This and some other options are
described in the Packaging Information table.
Anti static Cover Tape
These full reels are individually barcode labeled and
placed inside a pizza box (illustrated in figure 1.0) made of
recyclable corrugated brown paper with a Fairchild logo
printing. One pizza box contains three reels maximum.
And these pizza boxes are placed inside a barcode
labeled shipping box which comes in different sizes
depending on the number of parts shipped.
F63TNR
Label
Embossed
Carrier Tape
631
631
631
631
631
SSOT-6 Packaging Information
Packaging Option
Standard
(no f l ow c ode )
Pin 1
D87Z
SSOT-6 Unit Orientation
Packaging type
TNR
TNR
Qty per Reel/Tube/Bag
3,000
10,000
Reel Size
7" Dia
13"
184x187x47
343x343x64
Max qty per Box
9,000
30,000
Weight per unit (gm)
0.0158
0.0158
Weight per Reel (kg)
0.1440
0.4700
Box Dimension (mm)
343mm x 342mm x 64mm
Intermediate box fo r D87Z Option
F63TNR Label
Note/Comments
F63TNR
Label
F63TNR Label sa mpl e
184mm x 187mm x 47mm
Pizza Box fo r Standar d Opti on
F63TNR
Label
LOT: CBVK741B019
QTY: 3000
FSID: FDC633N
SPEC:
D/C1: D9842
D/C2:
SSOT-6 Tape Leader and Trailer
Configuration: Figur e 2.0
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
Carrier Tape
Cover Tape
1998 Fairchild Semiconductor Corporation
Comp onent s
Traile r Tape
300mm mi nimum or
75 empty poc kets
Lead er Tape
500mm mi nimum or
125 emp ty poc kets
August 1999, Rev. C
SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued
SSOT-6 Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
F
K0
Wc
W
E2
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
A0
B0
SSOT-6
(8mm)
3.23
+/-0.10
3.18
+/-0.10
W
8.0
+/-0.3
D0
D1
E1
E2
1.55
+/-0.05
1.125
+/-0.125
1.75
+/-0.10
F
6.25
min
3.50
+/-0.05
P1
P0
4.0
+/-0.1
4.0
+/-0.1
K0
T
1.37
+/-0.10
0.255
+/-0.150
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
Wc
0.06
+/-0.02
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
B0
5.2
+/-0.3
Tc
0.5mm
maximum
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
A0
Component Rotation
Sketch C (Top View)
Component lateral movement
Sketch B (Top View)
SSOT-6 Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7" Diameter Option
B Min
Dim C
See detail AA
W3
13" Diameter Option
Dim D
min
W2 max Measured at Hub
DETAIL AA
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
8mm
7" Dia
7.00
177.8
8mm
13" Dia
13.00
330
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
July 1999, Rev. C
SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued
SuperSOT -6 (FS PKG Code 31, 33)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0158
1998 Fairchild Semiconductor Corporation
September 1998, Rev. A
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not intended to be an exhaustive list of all such trademarks.
ACEx™
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FACT™
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FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
POP™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
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SyncFET™
TinyLogic™
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Definition of Terms
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Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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Rev. F1