TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS(on) = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 4.5 nC) • Low Crss ( typical 3.7 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability D D G S G I-PAK D-PAK FDD Series G D S FDU Series S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy IAR FDD3N40 / FDU3N40 Unit 400 V 2.0 1.25 A A 8.0 A ±30 V (Note 2) 46 mJ Avalanche Current (Note 1) 2 A EAR Repetitive Avalanche Energy (Note 1) 3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation 30 0.24 W W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C (Note 1) (TC = 25°C) - Derate above 25°C * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance, Junction-to-Case -- 4.2 °C/W RθJA Thermal Resistance, Case-to-Sink Typ. -- 110 °C/W ©2007 Fairchild Semiconductor Corporation FDD3N40 / FDU3N40 Rev. A 1 www.fairchildsemi.com FDD3N40 / FDU3N40 400V N-Channel MOSFET February 2007 Device Marking Device Package Reel Size Tape Width Quantity FDD3N40 FDD3N40TM D-PAK 380mm 16mm 2500 FDD3N40 FDD3N40TF D-PAK 380mm 16mm 2000 FDU3N40 FDU3N40TU I-PAK - - 70 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units 400 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.4 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 400V, VGS = 0V VDS = 320V, TC = 125°C --- --- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 2.8 3.4 Ω -- 2 -- S -- 173 225 pF On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 1A gFS Forward Transconductance VDS = 40V, ID = 1A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 30 40 pF -- 3.7 6 pF -- 10 30 ns -- 30 70 ns -- 10 30 ns -- 25 60 ns -- 4.5 6 nC -- 1.2 -- nC -- 2 -- nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 200V, ID = 3A RG = 25Ω (Note 4, 5) VDS = 320V, ID = 3A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 2 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 8 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 2A -- -- 1.4 V trr Reverse Recovery Time -- 210 -- ns Qrr Reverse Recovery Charge VGS = 0V, IS = 3A dIF/dt =100A/µs -- 0.75 -- µC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 20mH, IAS = 2A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 FDD3N40 / FDU3N40 Rev. A www.fairchildsemi.com FDD3N40 / FDU3N40 400V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1 1 10 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 0 10 ID, Drain Current [A] ID, Drain Current [A] Top : -1 10 o 150 C o 25 C o -55 C * Notes : 1. 250µs Pulse Test * Notes : 1. VDS = 40V 2. 250µs Pulse Test o 2. TC = 25 C -2 10 0 -1 0 10 10 1 10 10 4 5 6 7 8 9 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 14 13 IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 15 12 11 10 9 8 VGS = 10V 7 6 5 VGS = 20V 4 3 2 o 1 10 0 10 150oC o 25 C -1 0 1 2 3 4 5 10 6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD, Source-Drain voltage [V] ID, Drain Current [A] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 350 12 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 300 Coss 250 Capacitances [pF] * Notes : 1. VGS = 0V 2. 250µs Pulse Test * Note : TJ = 25 C 1 Ciss 200 150 100 * Note : 1. VGS = 0 V 2. f = 1 MHz Crss 50 VDS = 80V 10 VDS = 200V VDS = 320V 8 6 4 2 * Note : ID = 3A 0 -1 10 0 10 0 1 10 0 VDS, Drain-Source Voltage [V] 2 3 4 5 QG, Total Gate Charge [nC] 3 FDD3N40 / FDU3N40 Rev. A 1 www.fairchildsemi.com FDD3N40 / FDU3N40 400V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 * Notes : 1. VGS = 0 V 2. ID = 250µA 0.9 0.8 -100 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 150 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 1 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o TJ, Junction Temperature [ C] o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 2.5 1 10 µs 2.0 100 µs ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 0 10 10 ms 100 ms Operation in This Area is Limited by R DS(on) DC -1 10 * Notes : 1.5 1.0 0.5 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 0.0 25 2 10 10 50 75 100 125 150 o VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] ZθJC(t), Thermal Response Figure 11. Transient Thermal Response Curve D = 0 .5 10 0 0 .2 PDM t1 0 .1 t2 0 .0 5 0 .0 2 10 * N o te s : o 1 . Z θ J C ( t) = 4 .2 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .0 1 -1 s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] 4 FDD3N40 / FDU3N40 Rev. A www.fairchildsemi.com FDD3N40 / FDU3N40 400V N-Channel MOSFET Typical Performance Characteristics (Continued) FDD3N40 / FDU3N40 400V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 FDD3N40 / FDU3N40 Rev. A www.fairchildsemi.com FDD3N40 / FDU3N40 400V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 FDD3N40 / FDU3N40 Rev. A www.fairchildsemi.com FDD3N40 / FDU3N40 400V N-Channel MOSFET Mechanical Dimensions D-PAK 7 FDD3N40 / FDU3N40 Rev. A www.fairchildsemi.com FDD3N40 / FDU3N40 400V N-Channel MOSFET Mechanical Dimensions I-PAK 8 FDD3N40 / FDU3N40 Rev. 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A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Definition Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I23 © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com