Fairchild FDD5614P 60v p-channel powertrenchâ® mosfet Datasheet

FDD5614P
60V P-Channel PowerTrench® MOSFET
General Description
Features
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized
for power management applications.
• –15 A, –60 V. RDS(ON) = 100 mΩ @ VGS = –10 V
Applications
• Fast switching speed
• DC/DC converter
• High performance trench technology for extremely
RDS(ON) = 130 mΩ @ VGS = –4.5 V
low RDS(ON)
• Power management
• Load switch
• High power and current handling capability
S
D
G
G
S
TO-252
D
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
–60
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
–15
–45
A
W
– Continuous
(Note 3)
– Pulsed
PD
(Note 1a)
Power Dissipation for Single Operation
TJ, TSTG
(Note 1)
42
(Note 1a)
3.8
(Note 1b)
1.6
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
3.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
40
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
96
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD5614P
FDD5614P
13’’
12mm
2500 units
©2005 Fairchild Semiconductor Corporation
FDD5614P Rev C1(W)
FDD5614P
May 2005
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
IAR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
VDD = –30 V,
ID = –4.5 A
90
mJ
–4.5
A
Off Characteristics
VGS = 0 V, ID = –250 µA
–60
V
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VDS = –48 V,
VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 20V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V,
VDS = 0 V
–100
nA
On Characteristics
ID = –250 µA, Referenced to 25°C
–49
(Note 2)
Gate Threshold Voltage
VDS = VGS, ID = –250 µA
Gate Threshold Voltage
Temperature Coefficient
ID = –250 µA, Referenced to 25°C
4
RDS(on)
Static Drain–Source
On–Resistance
76
99
137
ID(on)
On–State Drain Current
VGS = –10 V,
ID = –4.5 A
ID = –3.9 A
VGS = –4.5 V,
VGS = –10 V,ID = –4.5 A,TJ=125°C
VGS = –10 V,
VDS = –5 V
gFS
Forward Transconductance
VDS = –5 V,
ID = –3 A
VDS = –30 V,
f = 1.0 MHz
V GS = 0 V,
VGS(th)
∆VGS(th)
∆TJ
mV/°C
–1
–1.6
–3
V
mV/°C
100
130
185
–20
mΩ
A
8
S
759
pF
90
pF
39
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = –30 V,
VGS = –10 V,
VDS = –30V,
VGS = –10 V
ID = –1 A,
RGEN = 6 Ω
ID = –4.5 A,
7
14
ns
10
20
ns
19
34
ns
12
22
ns
15
24
nC
2.5
nC
3.0
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –3.2 A
(Note 2)
–0.8
–3.2
A
–1.2
V
FDD5614P Rev C1(W)
FDD5614P
Electrical Characteristics
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a
1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
PD
RDS( ON)
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD5614P Rev C1(W)
FDD5614P
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
FDD5614P
Typical Characteristics
1.8
15
12
-4.5V
-4.0V
-6.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = -10V
-3.5V
9
6
-3.0V
3
-2.5V
VGS = -3.5V
1.6
-4.0V
1.4
-4.5V
-5.0V
1.2
-6.0V
-10V
1
0.8
0
0
1
2
3
4
0
5
2
4
Figure 1. On-Region Characteristics.
10
0.4
ID = -2.3 A
ID = -4.5A
VGS = -10V
1.8
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
8
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
0.3
0.2
TA = 125oC
0.1
TA = 25oC
0
175
2
4
TJ, JUNCTION TEMPERATURE (oC)
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VDS = -5V
TA = -55oC
IS, REVERSE DRAIN CURRENT (A)
15
ID, DRAIN CURRENT (A)
6
-ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
o
25 C
12
125oC
9
6
3
VGS = 0V
10
TA = 125oC
25oC
1
-55oC
0.1
0.01
0.001
0
1
2
3
4
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD5614P Rev C1(W)
FDD5614P
Typical Characteristics
1000
f = 1MHz
VGS = 0 V
ID = -4.5A
8
800
-30V
VDS = -40V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
-20V
6
4
CISS
600
400
2
200
0
0
COSS
CRSS
0
4
8
12
16
0
10
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
30
40
50
60
Figure 8. Capacitance Characteristics.
100
40
P(pk), PEAK TRANSIENT POWER (W)
100µs
1ms
10ms
RDS(ON) LIMIT
10
100ms
1s
1
10s
DC
VGS = -10V
SINGLE PULSE
RθJA = 96oC/W
0.1
TA = 25oC
0.01
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
30
20
10
0
0.1
1
10
100
0.1
1
-VDS, DRAIN-SOURCE VOLTAGE (V)
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
ID, DRAIN CURRENT (A)
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
RθJA = 96°C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD5614P Rev C1(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FAST
ActiveArray™
FASTr™
Bottomless™ FPS™
CoolFET™
FRFET™
CROSSVOLT™ GlobalOptoisolator™
DOME™
GTO™
EcoSPARK™ HiSeC™
E2CMOS™
I2C™
EnSigna™
i-Lo™
FACT™
ImpliedDisconnect™
FACT Quiet Series™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™

Across the board. Around the world.™ OPTOLOGIC
OPTOPLANAR™
The Power Franchise
PACMAN™
Programmable Active Droop™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
UltraFET
UniFET™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
Similar pages