Fairchild FDD5N50NZTM N-channel mosfet 500v, 4a, 1.5ï Datasheet

UniFET-IITM
FDD5N50NZ
N-Channel MOSFET
500V, 4A, 1.5
Features
Description
• RDS(on) = 1.38 ( Typ.)@ VGS = 10V, ID = 2A
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low Gate Charge ( Typ. 9nC)
• Low Crss ( Typ. 4pF)
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
D
G
S
D-PAK
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
ID
Drain Current
IDM
EAS
IAR
EAR
dv/dt
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
PD
Power Dissipation
TJ, TSTG
TL
Parameter
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDD5N50NZ
500
±25
4
2.4
16
304
4
6.2
10
62
0.5
-55 to +150
Units
V
V
300
oC
FDD5N50NZ
Units
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RJC
Thermal Resistance, Junction to Case
2.0
RJA
Thermal Resistance, Junction to Ambient
90
©2011 Fairchild Semiconductor Corporation
FDD5N50NZ Rev. C0
1
oC/W
www.fairchildsemi.com
FDD5N50NZ N-Channel MOSFET
November 2011
Device Marking
FDD5N50NZ
Device
FDD5N50NZTM
Package
D-PAK
Reel Size
380mm
Tape Width
16mm
Quantity
2500
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
500
-
-
V
-
0.5
-
V/oC
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125oC
VGS = ±25V, VDS = 0V
-
-
1
10
±10
VGS = VDS, ID = 250A
VGS = 10V, ID = 2A
VDS = 20V, ID = 2A
3.0
-
1.38
5.0
1.5
V

-
3.54
-
S
-
330
50
4
9
2
440
70
6
12
-
pF
pF
pF
nC
nC
(Note 4, 5)
-
4
-
nC
(Note 4, 5)
-
12
22
28
21
35
55
65
50
ns
ns
ns
ns
-
210
4
16
1.4
-
A
A
V
ns
-
1.1
-
C
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TJ = 25oC
ID = 250A, Referenced to
25oC
A
A
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain to Source On Resistance
gFS
Forward Transconductance
(Note 4)
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V ID = 4A
VGS = 10V
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 4A
VGS = 10V, RG = 25
Drain-Source Diode Characteristics
IS
ISM
VSD
trr
Qrr
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 4A
Reverse Recovery Time
VGS = 0V, ISD = 4A
dIF/dt = 100A/s
Reverse Recovery Charge
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 38mH, IAS = 4A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 4A, di/dt  200A/s, VDD  BVDSS, Starting TJ = 25C
4. Pulse Test: Pulse width  300s, Dual Cycle  2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDD5N50NZ Rev. C0
2
www.fairchildsemi.com
FDD5N50NZ N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
FDD5N50NZ Rev. C0
3
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FDD5N50NZ N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 9. Maximum Safe Operating Area
vs. Case Temperature
Figure 10. Maximum Drain Current
Figure 11. Transient Thermal Response Curve
PDM
t1
FDD5N50NZ Rev. C0
4
t2
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FDD5N50NZ N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDD5N50NZ N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDD5N50NZ Rev. C0
5
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FDD5N50NZ N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDD5N50NZ Rev. C0
6
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FDD5N50NZ N-Channel MOSFET
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
FDD5N50NZ Rev. C0
7
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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I55
FDD5N50NZ Rev. C0
8
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FDD5N50NZ N-Channel MOSFET
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