FDD5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.0 A, 2 Features Description • RDS(on) = 1.65 (Typ.) @ VGS = 10 V, ID = 2.0 A UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Low Gate Charge (Typ. 10 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply D D G G S D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FDD5N60NZ 600 Unit V ±25 V - Continuous (TC = 25oC) 4.0 2.4 ID Drain Current - Continuous (TC = 100oC) - Pulsed A IDM Drain Current (Note 1) 16 A EAS Single Pulsed Avalanche Energy (Note 2) 216 mJ IAR Avalanche Current (Note 1) 4.0 A EAR Repetitive Avalanche Energy (Note 1) 8.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns (TC = 25oC) 83 W - Derate above 25oC 0.7 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter FDD5N60NZ RJC Thermal Resistance, Junction to Case, Max. 1.5 RJA Thermal Resistance, Junction to Ambient, Max. 90 ©2011 Fairchild Semiconductor Corporation FDD5N60NZ Rev. C0 1 Unit o C/W www.fairchildsemi.com FDD5N60NZ N-Channel UniFETTM II MOSFET March 2013 Device Marking FDD5N60NZ Device FDD5N60NZ Package D-PAK Reel Size 380mm Tape Width 16mm Quantity 2500 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit 600 - - V - 0.6 - V/oC A Off Characteristics BVDSS BVDSS TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250A, VGS = 0V, TJ = 25oC IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V - - 50 VDS = 480V, TC = 125oC - - 100 IGSS Gate to Body Leakage Current VGS = ±25V, VDS = 0V - - ±10 ID = 250A, Referenced to 25oC A On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250A 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10V, ID = 2.0A - 1.65 2.00 gFS Forward Transconductance VDS = 20V, ID = 2.0A - 5 - S VDS = 25V, VGS = 0V f = 1MHz - 450 600 pF - 50 65 pF - 5 7.5 pF - 10 13 nC - 2.5 - nC - 4 - nC - 15 40 ns - 20 50 ns - 35 80 ns - 20 50 ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 400V, ID = 4.0A VGS = 10V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 4.0A VGS = 10V, RG = 25 (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 4.0 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 16 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 4.0A - - 1.4 V trr Reverse Recovery Time - 230 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 4.0A dIF/dt = 100A/s - 0.9 - C Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 27mH, IAS = 4.0A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 4.0A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Essentially Independent of Operating Temperature Typical Characteristics ©2011 Fairchild Semiconductor Corporation FDD5N60NZ Rev. C0 2 www.fairchildsemi.com FDD5N60NZ N-Channel UniFETTM II MOSFET Package Marking and Ordering Information Figure 2. Transfer Characteristics 20 VGS = 12.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V *Notes: 1. VDS = 20V 2. 250s Pulse Test 10 ID, Drain Current[A] ID, Drain Current[A] Figure 1. On-Region Characteristics 10 1 o 150 C o 25 C 1 o -55 C *Notes: 1. 250s Pulse Test o 2. TC = 25 C 0.1 0.1 0.1 1 VDS, Drain-Source Voltage[V] 10 20 2 4 6 8 VGS, Gate-Source Voltage[V] 3.5 30 IS, Reverse Drain Current [A] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature RDS(ON) [], Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3.0 VGS = 10V 2.5 VGS = 20V 2.0 10 o 150 C o 25 C 1 *Notes: 1. VGS = 0V o 2. 250s Pulse Test *Note: TC = 25 C 1.5 0 2 4 ID, Drain Current [A] 6 0.1 0.2 8 Figure 5. Capacitance Characteristics 1.2 Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] Ciss Coss 100 *Note: 1. VGS = 0V 2. f = 1MHz 10 0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V] 10 1000 Capacitances [pF] 10 Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3 0.1 1 10 VDS, Drain-Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDD5N60NZ Rev. C0 VDS = 120V VDS = 300V VDS = 480V 8 6 4 2 *Note: ID = 4A 0 30 3 0 2 4 6 8 Qg, Total Gate Charge [nC] 10 www.fairchildsemi.com FDD5N60NZ N-Channel UniFETTM II MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.8 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.12 1.08 1.04 1.00 0.96 *Notes: 1. VGS = 0V 2. ID = 250A 0.92 0.88 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 2.4 2.0 1.6 1.2 0.4 -60 160 Figure 9. Maximum Safe Operating Area vs. Case Temperature 150 100s ID, Drain Current [A] ID, Drain Current [A] 0 30 60 90 120 o TJ, Junction Temperature [ C] 4 30s 1ms 10ms 1 DC Operation in This Area is Limited by R DS(on) 0.1 *Notes: o 1. TC = 25 C 3 2 1 o o 2. TJ = 150 C 3. Single Pulse 0.01 -30 Figure 10. Maximum Drain Current 30 10 *Notes: 1. VGS = 10V 2. ID = 2.0A 0.8 1 10 100 VDS, Drain-Source Voltage [V] R JC = 1.5 C/W 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZJC] 2 1 0.5 0.2 PDM 0.1 0.1 t1 0.05 t2 0.02 *Notes: 0.01 o 1. ZJC(t) = 1.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) Single pulse 0.01 -5 10 ©2011 Fairchild Semiconductor Corporation FDD5N60NZ Rev. C0 -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 4 -1 10 1 www.fairchildsemi.com FDD5N60NZ N-Channel UniFETTM II MOSFET Typical Performance Characteristics (Continued) FDD5N60NZ N-Channel UniFETTM II MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDD5N60NZ Rev. C0 5 www.fairchildsemi.com FDD5N60NZ N-Channel UniFETTM II MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop ©2011 Fairchild Semiconductor Corporation FDD5N60NZ Rev. C0 6 www.fairchildsemi.com FDD5N60NZ N-Channel UniFETTM II MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters ©2011 Fairchild Semiconductor Corporation FDD5N60NZ Rev. C0 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2011 Fairchild Semiconductor Corporation FDD5N60NZ Rev. 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