FDD6612A/FDU6612A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. • 30 A, 30 V RDS(ON) = 20 mΩ @ VGS = 10 V RDS(ON) = 28 mΩ @ VGS = 4.5 V • Low gate charge • Fast Switching Applications • High performance trench technology for extremely low RDS(ON) • DC/DC converter • Motor Drives D D G S I-PAK (TO-251AA) D-PAK TO-252 (TO-252) G G D S Absolute Maximum Ratings Symbol S TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current @TC=25°C (Note 3) 30 A @TA=25°C (Note 1a) 9.5 Pulsed (Note 1a) 60 PD Power Dissipation TJ, TSTG @TC=25°C (Note 1) 36 @TA=25°C (Note 1a) 2.8 @TA=25°C (Note 1b) W 1.3 Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 3.9 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 45 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6612A FDD6612A D-PAK (TO-252) 13’’ 12mm 2500 units FDU6612A FDU6612A I-PAK (TO-251) Tube N/A 75 2004 Fairchild Semiconductor Corporation FDD6612A/FDU6612A Rev E(W) FDD6612A/FDU6612A February 2004 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, VDD = 27 V, ID=10 A 51 mJ 10 A Off Characteristics ID = 250 µA BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, VDS = 24 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) gFS 30 ID = 250 µA,Referenced to 25°C V 25 mV/°C (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VDS = VGS, ID = 250 µA ID = 250 µA,Referenced to 25°C Static Drain–Source On–Resistance VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VDS = 5 V, ID = 9.5 A ID = 8 A ID = 9.5 A, TJ=125°C ID = 9.5 A VDS = 15 V, f = 1.0 MHz V GS = 0 V, VGS = 15 Mv, f = 1.0 MHz Forward Transconductance 1 2.0 –5.1 3 15 20 23 20 28 33 V mV/°C mΩ 28 S 660 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics 170 pF 90 pF 2.3 Ω (Note 2) td(on) Turn–On Delay Time 9 18 ns tr Turn–On Rise Time 5 10 ns td(off) Turn–Off Delay Time 24 38 ns tf Turn–Off Fall Time 4 8 ns Qg Total Gate Charge 6.7 9.4 Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = 15 V, VGS = 10 V, VDS = 15 V, VGS = 5 V ID = 1 A, RGEN = 6 Ω ID = 9.5 A, nC 2.1 nC 2.7 nC FDD6612A/FDU6612A Rev. E(W) FDD6612A/FDU6612A Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 2.3 A IF = 9.5 A, diF/dt = 100 A/µs (Note 2) 0.8 2.3 A 1.2 V 20 nS 10 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 45°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6612A/FDU6612A Rev. E(W) FDD6612A/FDU6612A Electrical Characteristics FDD6612A/FDU6612A Typical Characteristics 2 60 5.0V ID, DRAIN CURRENT (A) 50 VGS = 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 4.5V 6.0V 40 4.0V 30 20 3.5V 10 1.8 1.6 4.0V 1.4 4.5V 5.0V 1.2 6.0V 10V 1 3.0V 0.8 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 4 Figure 1. On-Region Characteristics 20 ID, DRAIN CURRENT (A) 30 40 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.8 0.06 ID = 5 A ID = 9.5A VGS = 10V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10 1.4 1.2 1 0.8 0.05 0.04 0.03 TA = 125oC 0.02 TA = 25oC 0.6 0.01 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 2 Figure 3. On-Resistance Variation withTemperature 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 60 100 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 50 ID, DRAIN CURRENT (A) 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 40 30 20 o TA = 125 C 25oC 10 -55oC 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE TO SOURCE VOLTAGE (V) 5 Figure 5. Transfer Characteristics 5.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD6612A/FDU6612A Rev. E(W) FDD6612A/FDU6612A Typical Characteristics 1000 f = 1 MHz VGS = 0 V ID = 9.5A VDS = 10V 20V 800 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 15V 6 4 Ciss 600 400 Coss 2 200 0 0 Crss 0 2 4 6 8 10 Qg, GATE CHARGE (nC) 12 0 14 Figure 7. Gate Charge Characteristics P(pk), PEAK TRANSIENT POWER (W) 100µs 1ms 10ms 10 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE o RθJA = 96 C/W TA = 25oC 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE o RθJA = 96 C/W 40 TA = 25oC 30 20 10 0 0.001 100 Figure 9. Maximum Safe Operating Area r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 30 50 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics 100 0.1 5 0.01 0.1 1 t1, TIME (sec) 10 100 Figure 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) * RθJA 0.2 0.1 o RθJA = 96 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6612A/FDU6612A Rev. 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