FDD6637 35V P-Channel PowerTrench® MOSFET General Description Features This P-Channel MOSFET has been produced using • –55 A, –35 V RDS(ON) = 11.6 mΩ @ VGS = –10 V RDS(ON) = 18 mΩ @ VGS = –4.5 V Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss • High performance trench technology for extremely capability to offer superior performance benefit in the low RDS(ON) applications. • RoHS Compliant Applications • Inverter • Power Supplies D D G S G D-PAK TO-252 (TO-252) S Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter VDSS Drain-Source Voltage VDS(Avalanche) Drain-Source Avalanche Voltage (maximum) VGSS ID Gate-Source Voltage Continuous Drain Current @TC=25°C @TA=25°C PD Power Dissipation TJ, TSTG (Note 4) Ratings Units –35 V –40 V ±25 V A (Note 3) –55 (Note 1a) –14 –100 Pulsed (Note 1a) @TC=25°C (Note 3) 57 @TA=25°C (Note 1a) 3.8 @TA=25°C (Note 1b) W 1.6 Operating and Storage Junction Temperature Range –55 to +150 °C °C/W Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.2 RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6637 FDD6637 D-PAK (TO-252) 13’’ 12mm 2500 units ©2005 Fairchild Semiconductor Corporation FDD6637 Rev C(W) www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench® MOSFET October 2005 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings EAS IAS Drain-Source Avalanche Energy (Single Pulse) Drain-Source Avalanche Current VDD = -35 V, ID= -11 A, L=1mH 61 mJ –14 A Off Characteristics(Note 2) IDSS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current VDS = –28 V, VGS = 0 V –1 μA IGSS Gate–Body Leakage VGS = ±25 V, VDS = 0 V ±100 nA –3 11.6 18 19 mΩ BVDSS On Characteristics VGS = 0 V, ID = –250 μA –35 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 μA RDS(on) Static Drain–Source On–Resistance gFS Forward Transconductance VGS = –10 V, ID = –14 A VGS = –4.5 V, ID = –11 A VGS = –10 V, ID = –14 A, TJ=125°C VDS =–5 V, ID = –14 A –1 –1.6 9.7 14.4 14.7 V 35 S 2370 pF 470 pF 250 pF 3.6 Ω Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time VDS = –20 V, f = 1.0 MHz V GS = 0 V, f = 1.0 MHz (Note 2) VDD = –20 V, VGS = –10 V, ID = –1 A, RGEN = 6 Ω 18 32 ns 10 20 ns 62 100 ns tf Turn–Off Fall Time 36 58 ns Qg Total Gate Charge, VGS = –10V 45 63 nC 25 35 nC Qg Total Gate Charge, VGS = –5V Qgs Gate–Source Charge 7 nC Qgd Gate–Drain Charge 10 nC FDD6637 Rev. C(W) VDS = – 20 V, ID = –14 A www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench® MOSFET Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units –0.8 –1.2 Drain–Source Diode Characteristics VSD trr Qrr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time VGS = 0 V, IS = –14 A IF = –14 A, (Note 2) diF/dt = 100 A/µs Diode Reverse Recovery Charge V 28 ns 15 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A 4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device. FDD6637 Rev. C(W) www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench® MOSFET Electrical Characteristics 2.4 100 -6.0V VGS = -3.5V -5.0V NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V -4.5V -ID, DRAIN CURRENT (A) 80 -4.0V 60 -3.5V 40 20 -3.0V 0 1 2 3 -VDS, DRAIN-SOURCE VOLTAGE (V) 1.8 -4.0V 1.6 -4.5V -5.0V 1.4 -6.0V 1.2 -8.0V -10V 1 0 4 Figure 1. On-Region Characteristics 20 40 60 -ID, DRAIN CURRENT (A) 80 100 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.05 1.8 ID = -14A VGS = -10V ID = -7A RDS(ON), ON-RESISTANCE (OHM) NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 0.8 0 1.6 1.4 1.2 1 0.8 0.6 -50 0.04 0.03 o TA = 125 C 0.02 TA = 25oC 0.01 0 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 Figure 3. On-Resistance Variation with Temperature 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 1000 VGS = 0V 80 o TA = -55 C -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 2.2 125oC 60 o 25 C 40 20 0 100 10 o TA = 125 C 1 0.1 25oC o 0.01 -55 C 0.001 0.0001 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics FDD6637 Rev. C(W) 5 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench® MOSFET Typical Characteristics 3200 ID = -14A VDS = 10V f = 1MHz VGS = 0 V 30V 8 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 4 2400 Ciss 1600 Coss 800 2 Crss 0 0 0 10 20 30 Qg, GATE CHARGE (nC) 40 50 0 Figure 7. Gate Charge Characteristics 30 100 P(pk), PEAK TRANSIENT POWER (W) 100µs 1ms 10ms 100ms 100 -ID, DRAIN CURRENT (A) 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics 1000 RDS(ON) LIMIT 10 1s 10s DC 1 VGS = -10V SINGLE PULSE o RθJA = 96 C/W 0.1 o TA = 25 C SINGLE PULSE RθJA = 96°C/W TA = 25°C 80 60 40 20 0 0.01 0.01 0 0 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 0.1 100 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 100 1000 SINGLE PULSE RθJA = 96°C/W TA = 25°C 80 I(AS), AVALANCHE CURRENT I(pk), PEAK TRANSIENT CURRENT (A) 5 60 40 20 0 0.01 0.1 1 10 100 t1, TIME (sec) Figure 11. Single Pulse Maximum Peak Current FDD6637 Rev. C(W) 1000 o 100 TJ = 25 C 10 1 0.001 0.01 0.1 1 10 tAV, TIME IN AVANCHE(ms) Figure 12. Unclamped Inductive Switching Capability www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench® MOSFET Typical Characteristics r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 96 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 13. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6637 Rev. C(W) www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench® MOSFET Typical Characteristics TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ EnSigna™ ImpliedDisconnect™ FACT™ IntelliMAX™ FACT Quiet Series™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17