FDMC8854 N-Channel Power Trench® MOSFET 30V, 15A, 5.7mΩ Features tm General Description Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 15A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications. Max rDS(on) = 7.6mΩ at VGS = 4.5V, ID = 13A Low Profile - 1mm max in Power 33 RoHS Compliant Application DC - DC Conversion Bottom 5 6 7 Top 8 D 4 2 3 D D D 1 5 4 6 3 7 2 8 1 G S S S Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C TJ, TSTG Units V ±20 V 15 67 (Note 1a) -Pulsed PD Ratings 30 15 A 30 Power Dissipation TC = 25°C Power Dissipation TA = 25°C 41 (Note 1a) Operating and Storage Junction Temperature Range 2.0 -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case 3 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 60 °C/W Package Marking and Ordering Information Device Marking FDMC8854 Device FDMC8854 ©2007 Fairchild Semiconductor Corporation FDMC8854 Rev.C Package Power 33 1 Reel Size 7’’ Tape Width 8mm Quantity 3000 units www.fairchildsemi.com FDMC8854 N-Channel PowerTrench® MOSFET February 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 30 V ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VGS = 0V ±100 nA 3 V 21 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1 1.9 -6 mV/°C VGS = 10V, ID = 15A 4.4 5.7 VGS = 4.5V, ID = 13A 5.6 7.6 VGS = 10V, ID = 15A, TJ = 125°C 6.6 9.0 VDS = 5V, ID = 15A 60 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 10V, VGS = 0V, f = 1MHz f = 1MHz 2560 3405 pF 515 685 pF 290 435 pF Ω 1.3 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time 5 10 ns Qg(TOT) Total Gate Charge 41 57 nC Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 10V, ID = 15A VGS = 10V, RGEN = 6Ω VDD =10V, ID = 15A, VGS = 10V 13 23 5 10 ns ns 31 50 ns 7 nC 7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 15A (Note 2) IF = 15A, di/dt = 100A/µs 0.8 1.3 V 33 50 ns 28 42 nC Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 135°C/W when mounted on a minimum pad of 2 oz copper a. 60°C/W when mounted on a 1 in2 pad of 2 oz copper 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. FDMC8854 Rev.C 2 www.fairchildsemi.com FDMC8854 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 180 VGS = 10.0V 150 VGS =4.5V 120 VGS = 4.0V 90 VGS = 3.5V 60 30 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 0 1 2 3 4 5 3.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 2.5 VGS = 3.5V 2.0 VGS = 4V 1.0 VGS = 10.0V 0.5 0 30 Figure 1. On-Region Characteristics 90 120 150 180 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 15 1.8 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 1.6 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 ID, DRAIN CURRENT(A) VDS, DRAIN TO SOURCE VOLTAGE (V) ID =15A VGS = 10V 1.4 1.2 1.0 0.8 0.6 -75 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 12 ID =15A 9 TJ = 125oC 6 TJ = 25oC 3 2 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 100 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX ID, DRAIN CURRENT (A) VGS = 4.5V 1.5 80 60 40 TJ = 150oC TJ = 25oC 20 TJ = -55oC 0 1.5 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.0 Figure 5. Transfer Characteristics FDMC8854 Rev.C VGS = 0V 10 1 TJ = 150oC TJ = 25oC 0.1 TJ = -55oC 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC8854 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC8854 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 4000 ID = 15A 8 Ciss VDD = 5V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 10V 6 VDD =15V 4 2 1000 Coss Crss f = 1MHz VGS = 0V 100 0.1 0 0 10 20 30 Qg, GATE CHARGE(nC) 40 50 Figure 7. Gate Charge Characteristics 80 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 30 Figure 8. Capacitance vs Drain to Source Voltage 20 10 TJ = 25oC TJ = 125oC 60 VGS = 10V 40 Package limited VGS = 4.5V 20 o RθJC = 3 C/W 1 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE(ms) 0 1000 25 P(PK), PEAK TRANSIENT POWER (W) 1ms 10ms 0.01 0.01 100ms SINGLE PULSE TJ = MAX RATED RθJA = 135oC/W TA = 25oC 0.1 1 1s DC 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) 125 150 200 VGS = 10V 100 TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 10 150 – T A ----------------------125 1 SINGLE PULSE 0.5 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area FDMC8854 Rev.C 100 Figure 10. Maximum Continuous Drain Current vs Case Temperature 10 0.1 75 o 100 1 R DS(ON) LIMITED 50 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 0.01 0.004 -3 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDMC8854 Rev.C 5 www.fairchildsemi.com FDMC8854 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC8854 N-Channel PowerTrench® MOSFET www.fairchildsemi.com 6 FDMC8854 Rev.C FDMC8854 N-Channel PowerTrench® MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 FDMC8854 Rev.C 7 www.fairchildsemi.com