Fairchild FDMS5672 N-channel ultrafet trenchâ® mosfet Datasheet

FDMS5672
N-Channel UltraFET Trench® MOSFET
60V, 22A, 11.5mΩ
Features
tm
General Description
„ Max rDS(on) = 11.5mΩ at VGS = 10V, ID = 10.6A
UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for rDS(on), low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
„ Max rDS(on) = 16.5mΩ at VGS = 6V, ID = 8A
„ Typ Qg = 32nC at VGS = 10V
„ Low Miller Charge
Application
„ Optimized efficiency at high frequencies
„ DC - DC Conversion
„ RoHS Compliant
S
S
Pin 1
D
D
D
S
G
D
D
5
4 G
D
6
3 S
D
7
2
D
8
1 S
S
Power 56 (Bottom view)
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25°C
-Continuous (Silicon limited)
TC = 25°C
-Continuous
TA = 25°C
PD
TJ, TSTG
Units
V
±20
V
22
65
(Note 1a)
10.6
(Note 3)
337
-Pulsed
A
60
Single Pulse Avalanche Energy
EAS
Ratings
60
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
78
(Note 1a)
Operating and Storage Junction Temperature Range
2.5
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
1.6
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS5672
Device
FDMS5672
©2006 Fairchild Semiconductor Corporation
FDMS5672 Rev.C2
Package
Power 56
1
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
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FDMS5672 N-Channel UltraFET Trench® MOSFET
December 2007
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
60
V
ID = 250µA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 48V, VGS = 0V
1
µA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
±100
nA
4
V
59
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
rDS(on)
gFS
Drain to Source On Resistance
Forward Transconductance
2
3.2
-11
mV/°C
VGS = 10V, ID = 10.6A
9.4
11.5
VGS = 6V, ID = 8A
13.0
16.5
VGS = 10V, ID = 10.6A,
TJ = 125°C
15.0
18.0
VDS = 10V, ID = 10.6A
26
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 30V, VGS = 0V,
f = 1MHz
f = 1MHz
2100
2800
pF
375
500
pF
120
180
pF
Ω
1.2
Switching Characteristics
td(on)
Turn-On Delay Time
16
29
ns
tr
Rise Time
17
31
ns
td(off)
Turn-Off Delay Time
22
35
ns
tf
Fall Time
8
16
ns
Qg(TOT)
Total Gate Charge at 10V
32
45
nC
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 30V, ID = 10.6A
VGS = 10V, RGEN = 6Ω
VGS = 0V to 10V
VDD = 30V
ID = 10.6A
10
nC
8.3
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 10.6A
(Note 2)
IF = 10.6A, di/dt = 100A/µs
0.80
1.20
V
35
53
ns
42
63
nC
Notes:
1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50°C/W when mounted on a
1 in2 pad of 2 oz copper
b. 125°C/W when mounted on
minimum pad of 2 oz copper
a
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 15A, VDD = 60V, VGS = 10V.
FDMS5672 Rev.C2
2
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FDMS5672 N-Channel UltraFET Trench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
VGS = 10V
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 7V
VGS = 8V
80
60
VGS = 6V
40
VGS = 5V
20
0
0
1
2
3
4.0
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
120
4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
3.5
VGS = 5V
3.0
VGS = 6V
2.5
VGS = 7V
2.0
VGS = 8V
1.5
1.0
0.5
VGS = 10V
0
20
1.8
100
120
30
ID = 10.6A
VGS = 10V
1.6
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
80
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.4
1.2
1.0
0.8
0.6
-75
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
25
20
ID =10.6A
TJ = 125oC
15
TJ = 25oC
10
5
4
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to
Source Voltage
100
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
50
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
60
ID, DRAIN CURRENT(A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
40
30
TJ = 25oC
20
TJ
= 150oC
TJ = -55oC
10
0
40
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
6
Figure 5. Transfer Characteristics
FDMS5672 Rev.C2
VGS = 0V
10
1
TJ = 150oC
TJ = 25oC
0.1
TJ = -55oC
0.01
1E-3
0.0
0.2
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
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FDMS5672 N-Channel UltraFET Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
4000
ID = 10.6A
8
VDD = 20V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = 30V
6
VDD = 40V
4
2
0
0
5
10
15
20
25
Qg, GATE CHARGE(nC)
30
Ciss
1000
Coss
100
40
0.1
35
Figure 7. Gate Charge Characteristics
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
TJ = 25oC
TJ = 125oC
60
VGS = 10V
50
40
VGS = 6V
30
20
Limited by Package
10
1
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE(ms)
0
500
10ms
1
100ms
1s
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
10s
DC
TA = 25oC
1E-3
0.1
1
50
75
100
125
150
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
100us
1ms
10
25
o
P(PK), PEAK TRANSIENT POWER (W)
50
o
RθJC = 1.6 C/W
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
ID, DRAIN CURRENT (A)
60
70
10
10
100 500
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
FDMS5672 Rev.C2
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
20
0.01
Crss
f = 1MHz
VGS = 0V
2000
1000
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
100
150 – T
A
----------------------125
I = I25
TA = 25oC
10
SINGLE PULSE
1
0.6
-3
10
-2
10
-1
0
1
10
10
10
t, PULSE WIDTH (s)
2
10
3
10
Figure 12. Single Pulse Maximum
Power Dissipation
4
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FDMS5672 N-Channel UltraFET Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJA
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
t2
1E-3
5E-3
-3
10
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
FDMS5672 Rev.C2
5
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FDMS5672 N-Channel UltraFET Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
FDMS5672 N-Channel UltraFET Trench® MOSFET
www.fairchildsemi.com
6
FDMS5672 Rev.C2
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Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
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First Production
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Rev. I32
FDMS5672 Rev. C2
7
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FDMS5672 N-Channel UItraFET Trench® MOSFET
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