FDMS5672 N-Channel UltraFET Trench® MOSFET 60V, 22A, 11.5mΩ Features tm General Description Max rDS(on) = 11.5mΩ at VGS = 10V, ID = 10.6A UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Max rDS(on) = 16.5mΩ at VGS = 6V, ID = 8A Typ Qg = 32nC at VGS = 10V Low Miller Charge Application Optimized efficiency at high frequencies DC - DC Conversion RoHS Compliant S S Pin 1 D D D S G D D 5 4 G D 6 3 S D 7 2 D 8 1 S S Power 56 (Bottom view) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C PD TJ, TSTG Units V ±20 V 22 65 (Note 1a) 10.6 (Note 3) 337 -Pulsed A 60 Single Pulse Avalanche Energy EAS Ratings 60 Power Dissipation TC = 25°C Power Dissipation TA = 25°C 78 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.6 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS5672 Device FDMS5672 ©2006 Fairchild Semiconductor Corporation FDMS5672 Rev.C2 Package Power 56 1 Reel Size 13’’ Tape Width 12mm Quantity 3000 units www.fairchildsemi.com FDMS5672 N-Channel UltraFET Trench® MOSFET December 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 60 V ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 48V, VGS = 0V 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 4 V 59 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C rDS(on) gFS Drain to Source On Resistance Forward Transconductance 2 3.2 -11 mV/°C VGS = 10V, ID = 10.6A 9.4 11.5 VGS = 6V, ID = 8A 13.0 16.5 VGS = 10V, ID = 10.6A, TJ = 125°C 15.0 18.0 VDS = 10V, ID = 10.6A 26 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 30V, VGS = 0V, f = 1MHz f = 1MHz 2100 2800 pF 375 500 pF 120 180 pF Ω 1.2 Switching Characteristics td(on) Turn-On Delay Time 16 29 ns tr Rise Time 17 31 ns td(off) Turn-Off Delay Time 22 35 ns tf Fall Time 8 16 ns Qg(TOT) Total Gate Charge at 10V 32 45 nC Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 30V, ID = 10.6A VGS = 10V, RGEN = 6Ω VGS = 0V to 10V VDD = 30V ID = 10.6A 10 nC 8.3 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 10.6A (Note 2) IF = 10.6A, di/dt = 100A/µs 0.80 1.20 V 35 53 ns 42 63 nC Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper b. 125°C/W when mounted on minimum pad of 2 oz copper a 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 15A, VDD = 60V, VGS = 10V. FDMS5672 Rev.C2 2 www.fairchildsemi.com FDMS5672 N-Channel UltraFET Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted VGS = 10V 100 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 7V VGS = 8V 80 60 VGS = 6V 40 VGS = 5V 20 0 0 1 2 3 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 120 4 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 3.5 VGS = 5V 3.0 VGS = 6V 2.5 VGS = 7V 2.0 VGS = 8V 1.5 1.0 0.5 VGS = 10V 0 20 1.8 100 120 30 ID = 10.6A VGS = 10V 1.6 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 80 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 25 20 ID =10.6A TJ = 125oC 15 TJ = 25oC 10 5 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 100 60 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 50 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 60 ID, DRAIN CURRENT(A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics 40 30 TJ = 25oC 20 TJ = 150oC TJ = -55oC 10 0 40 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 6 Figure 5. Transfer Characteristics FDMS5672 Rev.C2 VGS = 0V 10 1 TJ = 150oC TJ = 25oC 0.1 TJ = -55oC 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMS5672 N-Channel UltraFET Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 4000 ID = 10.6A 8 VDD = 20V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 30V 6 VDD = 40V 4 2 0 0 5 10 15 20 25 Qg, GATE CHARGE(nC) 30 Ciss 1000 Coss 100 40 0.1 35 Figure 7. Gate Charge Characteristics ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) TJ = 25oC TJ = 125oC 60 VGS = 10V 50 40 VGS = 6V 30 20 Limited by Package 10 1 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE(ms) 0 500 10ms 1 100ms 1s 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED 10s DC TA = 25oC 1E-3 0.1 1 50 75 100 125 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100us 1ms 10 25 o P(PK), PEAK TRANSIENT POWER (W) 50 o RθJC = 1.6 C/W TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) 60 70 10 10 100 500 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMS5672 Rev.C2 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage 20 0.01 Crss f = 1MHz VGS = 0V 2000 1000 VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 100 150 – T A ----------------------125 I = I25 TA = 25oC 10 SINGLE PULSE 1 0.6 -3 10 -2 10 -1 0 1 10 10 10 t, PULSE WIDTH (s) 2 10 3 10 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS5672 N-Channel UltraFET Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 1E-3 5E-3 -3 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDMS5672 Rev.C2 5 www.fairchildsemi.com FDMS5672 N-Channel UltraFET Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMS5672 N-Channel UltraFET Trench® MOSFET www.fairchildsemi.com 6 FDMS5672 Rev.C2 The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I32 FDMS5672 Rev. C2 7 www.fairchildsemi.com FDMS5672 N-Channel UItraFET Trench® MOSFET TRADEMARKS