Fairchild FDMS86102LZ N-channel power trenchâ® mosfet 100 v, 22 a, 25 mî© Datasheet

FDMS86102LZ
N-Channel Power Trench® MOSFET
100 V, 22 A, 25 mΩ
Features
General Description
„ Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A
This N-Channel logic Level MOSFETs are produced using
Fairchild Semiconductor's advanced Power Trench® process
that has been special tailored to minimize the on-state
resistance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD voltage level.
„ Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A
„ HBM ESD protection level > 6 KV typical (Note 4)
„ 100% UIL Tested
„ RoHS Compliant
Applications
„ DC - DC Conversion
„ Inverter
„ Synchronous Rectifier
Bottom
Top
Pin 1
S
D
D
D
S
S
G
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
PD
TJ, TSTG
Units
V
±20
V
22
37
(Note 1a)
-Pulsed
7
A
40
Single Pulse Avalanche Energy
EAS
Ratings
100
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
84
69
(Note 1a)
Operating and Storage Junction Temperature Range
2.5
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
1.8
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS86102Z
Device
FDMS86102LZ
©2011 Fairchild Semiconductor Corporation
FDMS86102LZ Rev.C
Package
Power 56
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMS86102LZ N-Channel Power Trench® MOSFET
May 2011
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±10
μA
2.5
V
100
V
70
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 7 A
18.6
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 5.8 A
23.5
37
VGS = 10 V, ID = 7 A, TJ = 125 °C
31.2
42
gFS
Forward Transconductance
1.0
1.5
-6
mV/°C
25
mΩ
VDS = 5 V, ID = 7 A
26
S
VDS = 50 V, VGS = 0 V,
f = 1 MHz
979
1305
pF
175
235
pF
8.9
15
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Ω
0.9
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge
VGS = 0 V to 10 V
Qg(TOT)
Total Gate Charge
VGS = 0 V to 4.5 V
Qgs
Total Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 7 A,
VGS = 10 V, RGEN = 6 Ω
VDD = 50 V,
ID = 7 A
6.7
14
2.6
10
ns
ns
19
35
ns
2.5
10
ns
16
22
nC
7.8
11
nC
2.4
nC
2.6
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 7 A
(Note 2)
0.81
1.3
VGS = 0 V, IS = 2 A
(Note 2)
0.72
1.2
IF = 7 A, di/dt = 100 A/μs
V
35
57
ns
25
40
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper
b. 125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 13 A, VDD = 90 V, VGS = 10 V.
4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2011 Fairchild Semiconductor Corporation
FDMS86102LZ Rev. C
2
www.fairchildsemi.com
FDMS86102LZ N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
40
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
6
ID, DRAIN CURRENT (A)
VGS = 3.5 V
30
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
20
VGS = 3 V
10
VGS = 2.5 V
0
0
1
2
3
4
5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
5
VGS = 2.5 V
4
VGS = 3 V
3
VGS = 3.5 V
2
VGS = 4.5 V
1
VGS = 10 V
0
0
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
40
100
ID = 7 A
1.8
VGS = 10 V
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
0.6
-75
-50
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
30
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 7 A
80
60
TJ = 125 oC
40
20
0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
TJ = 25 oC
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On-Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
40
IS, REVERSE DRAIN CURRENT (A)
40
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
20
ID, DRAIN CURRENT (A)
30
VDS = 5 V
20
TJ = 150 oC
TJ = 25 oC
10
TJ = -55 oC
0
1.0
1.5
2.0
2.5
3.0
3.5
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
4.0
VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2011 Fairchild Semiconductor Corporation
FDMS86102LZ Rev. C
VGS = 0 V
10
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDMS86102LZ N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
5000
ID = 7 A
Ciss
VDD = 50 V
1000
8
VDD = 25 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 75 V
6
4
Coss
100
Crss
10
2
f = 1 MHz
VGS = 0 V
0
0
4
8
12
1
0.1
16
1
Figure 7. Gate Charge Characteristics
100
Figure 8. Capacitance vs Drain
to Source Voltage
40
ID, DRAIN CURRENT (A)
50
IAS, AVALANCHE CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
32
24
VGS = 10 V
16
VGS = 4.5 V
Limited by Package
8
o
RθJC = 1.8 C/W
1
0.001
0.01
0.1
1
0
25
10 20
50
75
100
125
150
o
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
-1
50
VDS = 0 V
-2
10
-3
ID, DRAIN CURRENT (A)
Ig, GATE LEAKAGE CURRENT (A)
10
10
-4
10
TJ = 125 oC
-5
10
-6
10
TJ = 25
oC
-7
10
10
100 us
1 ms
1
0.1
-8
10
0.01
0.005
0.01
-9
10
0
4
8
12
16
20
24
28
32
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
RθJA = 125 oC/W
10 s
TA = 25 oC
0.1
1
DC
10
100
500
VDS, DRAIN to SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. Gate Leakage Current vs
Gate to Source Voltage
©2011 Fairchild Semiconductor Corporation
FDMS86102LZ Rev. C
10 ms
THIS AREA IS
LIMITED BY rDS(on)
Figure 12. Forward Bias Safe
Operating Area
4
www.fairchildsemi.com
FDMS86102LZ N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
P(PK), PEAK TRANSIENT POWER (W)
1000
100
10
SINGLE PULSE
o
RθJA = 125 C/W
o
TA = 25 C
1
0.5 -4
10
-3
-2
10
-1
10
10
1
100
10
1000
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
2
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 125 C/W
0.001 -4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDMS86102LZ Rev. C
5
www.fairchildsemi.com
FDMS86102LZ N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS86102LZ N-Channel Power Trench® MOSFET
Dimensional Outline and Pad Layout
©2011 Fairchild Semiconductor Corporation
FDMS86102LZ Rev. C
6
www.fairchildsemi.com
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I54
©2011 Fairchild Semiconductor Corporation
FDMS86102LZ Rev.C
7
www.fairchildsemi.com
FDMS86102LZ N-Channel Power Trench® MOSFET
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