FDMS86150 N-Channel PowerTrench® MOSFET 100 V, 60 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design Applications 100% UIL tested Primary DC-DC MOSFET RoHS Compliant Secondary Synchronous Rectifier Load Switch Bottom Top S Pin 1 D D D S S Pin 1 S D G S D S D G D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID TJ, TSTG ±20 V (Note 1a) 16 A 300 Single Pulse Avalanche Energy PD Units V 60 -Pulsed EAS Ratings 100 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 726 156 (Note 1a) Operating and Storage Junction Temperature Range 2.7 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 0.8 (Note 1a) 45 °C/W Package Marking and Ordering Information Device Marking FDMS86150 Device FDMS86150 ©2012 Fairchild Semiconductor Corporation FDMS86150 Rev.C1 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS86150 N-Channel PowerTrench® MOSFET October 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 100 V 72 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -10 VGS = 10 V, ID = 16 A 3.9 4.85 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 13 A 6 7.8 VGS = 10 V, ID = 16 A, TJ = 125 °C 7.3 9.1 VDS = 10 V, ID = 16 A 53 gFS Forward Transconductance 2 3 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 0.1 3055 4065 pF 696 930 pF 29 50 pF 0.7 3.6 Ω ns Switching Characteristics 18 33 VDD = 50 V, ID = 16 A, VGS = 10 V, RGEN = 6 Ω 8.3 17 ns 28 45 ns 6 12 ns Total Gate Charge VGS = 0 V to 10 V 44 62 nC VGS = 0 V to 5 V 25 35 td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 16 A nC 12.9 nC 9.2 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.69 1.2 VGS = 0 V, IS = 16 A (Note 2) 0.78 1.3 IF = 16 A, di/dt = 100 A/μs V 69 110 ns 94 150 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 45 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 115 °C/W when mounted on a minimum pad of 2 oz copper. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 726 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 22 A, VDD = 100 V, VGS = 10 V, 100% test at L = 0.1 mH, IAS = 69 A. ©2012 Fairchild Semiconductor Corporation FDMS86150 Rev.C1 2 www.fairchildsemi.com FDMS86150 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 250 ID, DRAIN CURRENT (A) 4 VGS = 10 V VGS = 8 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 300 VGS = 7 V 200 150 VGS = 6 V 100 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 50 VGS = 5 V 0 0 1 2 3 4 VGS = 5 V 3 VGS = 6 V VGS = 7 V 2 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 5 0 50 VDS, DRAIN TO SOURCE VOLTAGE (V) 150 200 250 300 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 20 ID = 16 A VGS = 10 V 2.0 rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) 2.2 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 100 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 300 10 TJ = 125 oC 5 TJ = 25 oC 4 IS, REVERSE DRAIN CURRENT (A) 150 100 TJ = 25 oC 50 TJ = -55 oC 0 3 4 5 6 7 6 7 8 9 300 100 VGS = 0 V TJ = 150 oC 10 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 8 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2012 Fairchild Semiconductor Corporation FDMS86150 Rev.C1 10 Figure 4. On-Resistance vs Gate to Source Voltage VDS = 5 V TJ = 150 oC 5 VGS, GATE TO SOURCE VOLTAGE (V) 200 2 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 15 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 250 ID = 16 A 0 -50 Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) VGS = 10 V VGS = 8 V 3 1.2 www.fairchildsemi.com FDMS86150 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 10000 ID = 16 A VDD = 50 V 8 VDD = 25 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V 6 4 Ciss 1000 Coss 100 Crss 2 f = 1 MHz VGS = 0 V 10 0.1 0 0 10 20 30 40 50 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 125 100 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) VGS = 10 V TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 1 100 VGS = 6 V 75 50 Limited by Package 25 o RθJC = 0.8 C/W 0.1 0.01 0.1 1 10 100 0 25 1000 10000 100000 50 125 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 P(PK), PEAK TRANSIENT POWER (W) 300 100 ID, DRAIN CURRENT (A) 100 o Figure 9. Unclamped Inductive Switching Capability 10 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) 1 ms THIS AREA IS LIMITED BY rDS(on) 0.1 10 ms SINGLE PULSE TJ = MAX RATED 100 ms 1s RθJA = 115 oC/W 0.01 0.01 10 s DC TA = 25 oC 0.1 1 10 100 500 100 10 SINGLE PULSE RθJA = 115 oC/W 1 TA = 25 oC 0.5 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS86150 Rev.C1 VGS = 10 V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS86150 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 115 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS86150 Rev.C1 5 www.fairchildsemi.com FDMS86150 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMS86150 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMS86150 Rev.C1 6 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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I61 ©2012 Fairchild Semiconductor Corporation FDMS86150 Rev.C1 7 www.fairchildsemi.com FDMS86150 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ The Power Franchise® PowerTrench® F-PFS™ ® AccuPower™ PowerXS™ FRFET® Global Power ResourceSM AX-CAP™* Programmable Active Droop™ ® ® Green Bridge™ BitSiC QFET TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® CROSSVOLT™ GTO™ ™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Saving our world, 1mW/W/kW at a time™ Current Transfer Logic™ ISOPLANAR™ TinyPWM™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyWire™ Dual Cool™ SmartMax™ and Better™ TranSiC® EcoSPARK® SMART START™ MegaBuck™ TriFault Detect™ EfficentMax™ Solutions for Your Success™ MICROCOUPLER™ TRUECURRENT®* ESBC™ SPM® MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ ® SuperSOT™-3 MillerDrive™ Fairchild UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® ® VisualMax™ Sync-Lock™ OPTOLOGIC FastvCore™ VoltagePlus™ ®* OPTOPLANAR® FETBench™ XS™ FlashWriter® * ® FPS™