UniFETTM FDP15N40 / FDPF15N40 tm N-Channel MOSFET 400V, 15A, 0.3Ω Features Description • RDS(on) = 0.24Ω ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Gate Charge ( Typ. 28nC) • Low Crss ( Typ. 17pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant D G G DS TO-220 FDP Series TO-220F FDPF Series GD S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current FDP15N40 FDPF15N40 400 Units V ±30 V -Continuous (TC = 25oC) 15 15* -Continuous (TC = 100oC) 9 9* - Pulsed (Note 1) IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 15 A EAR Repetitive Avalanche Energy (Note 1) 17 mJ dv/dt Peak Diode Recovery dv/dt 60* (Note 2) A 731 (Note 3) mJ 15 V/ns (TC = 25oC) 170 40 W - Derate above 25oC 1.45 0.3 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL 60 A -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics FDP15N40 FDPF15N40 RθJC Symbol Thermal Resistance, Junction to Case Parameter 0.7 3.0 RθCS Thermal Resistance, Case to Sink Typ. 0.5 - RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2008 Fairchild Semiconductor Corporation FDP15N40 / FDPF15N40 Rev. A 1 Units o C/W www.fairchildsemi.com FDP15N40 / FDPF15N40 N-Channel MOSFET October 2008 Device Marking FDP15N40 Device FDP15N40 Package TO-220 Reel Size - Tape Width - Quantity 50 FDPF15N40 FDPF15N40 TO-220F - - 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V, TJ = 25oC 400 - - V ID = 250μA, Referenced to 25oC - 0.5 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 400V, VGS = 0V - - 1 VDS = 320V, TC = 125oC - - 10 μA IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 0.24 0.3 Ω - 15.3 - S nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance VGS = 10V, ID = 7.5A gFS Forward Transconductance VDS = 20V, ID = 7.5A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 320V, ID = 15A VGS = 10V (Note 4, 5) - 1310 1750 pF - 210 280 pF - 17 25 pF - 28 36 nC - 8 - nC - 12 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 200V, ID = 15A RG = 25Ω (Note 4, 5) - 26 62 ns - 55 120 ns - 72 154 ns - 40 90 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 15 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 60 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 15A - - 1.4 V trr Reverse Recovery Time - 333 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 15A dIF/dt = 100A/μs - 3.24 - μC (Note 4) Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 6.5mH, IAS = 15A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 15A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP15N40 / FDPF15N40 Rev. A 2 www.fairchildsemi.com FDP15N40 / FDPF15N40 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID,Drain Current[A] ID,Drain Current[A] 40 Figure 2. Transfer Characteristics 60 1 o 150 C 10 o -55 C o 25 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 1 1 VDS,Drain-Source Voltage[V] 4 10 5 6 7 VGS,Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.50 80 0.45 0.40 0.35 VGS = 10V 0.30 VGS = 20V 0.25 o 150 C 10 o 25 C 1 *Notes: 1. VGS = 0V o *Note: TJ = 25 C 2. 250μs Pulse Test 0.1 0.2 0.20 0 10 20 30 ID, Drain Current [A] 40 0.4 0.6 0.8 1.0 1.2 1.3 VSD, Body Diode Forward Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 3000 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] Capacitances [pF] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 0.2 0.1 *Note: 1. VGS = 0V 2. f = 1MHz 2000 Ciss 1000 Coss VDS = 100V VDS = 200V VDS = 320V 8 6 4 2 Crss 0 0.1 *Note: ID = 15A 0 1 10 VDS, Drain-Source Voltage [V] FDP15N40 / FDPF15N40 Rev. A 0 30 3 5 10 15 20 25 Qg, Total Gate Charge [nC] 30 www.fairchildsemi.com FDP15N40 / FDPF15N40 N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.0 -75 175 *Notes: 1. VGS = 10V 2. ID = 7.5A 0.5 -25 25 75 125 o TJ, Junction Temperature [ C] 175 Figure 9. Maximum Safe Operating Area - FDP15N40 Figure 10. Maximum Safe Operating Area 100 16 30μs 10 1 ID, Drain Current [A] ID, Drain Current [A] 100μs 1ms 10ms DC Operation in This Area is Limited by R DS(on) *Notes: 0.1 o 12 8 4 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 25 0.01 1 10 100 VDS, Drain-Source Voltage [V] 800 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve - FDP15N40 Thermal Response [ZθJC] 1 0.5 0.2 0.1 0.1 t1 t2 0.02 0.01 *Notes: 0.01 o 1. ZθJC(t) = 0.7 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.002 -5 10 FDP15N40 / FDPF15N40 Rev. A PDM 0.05 -4 10 -3 -2 -1 0 10 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 2 10 www.fairchildsemi.com FDP15N40 / FDPF15N40 N-Channel MOSFET Typical Performance Characteristics (Continued) FDP15N40 / FDPF15N40 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP15N40 / FDPF15N40 Rev. A 5 www.fairchildsemi.com FDP15N40 / FDPF15N40 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP15N40 / FDPF15N40 Rev. A 6 www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.40 ±0.20 10.00 ±0.20 FDP15N40 / FDPF15N40 Rev. A 7 www.fairchildsemi.com FDP15N40 / FDPF15N40 N-Channel MOSFET Mechanical Dimensions FDP15N40 / FDPF15N40 N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FDP15N40 / FDPF15N40 Rev. A 8 www.fairchildsemi.com FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 FDP15N40 / FDPF15N40 Rev. A 9 www.fairchildsemi.com FDP15N40 / FDPF15N40 N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.