FDPF3N50NZ N-Channel UniFETTM II MOSFET 500 V, 3 A, 2.5 Features Description • RDS(on) = 2.1 (Typ.) @ VGS = 10 V, ID = 1.5 A UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Low Gate Charge (Typ. 6.2 nC) • Low Crss (Typ. 2.5 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D G G D S TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FDPF3N50NZ 500 Unit V ±25 V - Continuous (TC = 25oC) 3* 1.8* ID Drain Current - Continuous (TC = 100oC) IDM Drain Current - Pulsed EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 3 A EAR Repetitive Avalanche Energy (Note 1) 5.4 mJ dv/dt Peak Diode Recovery dv/dt 10 V/ns PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) 12* A (Note 2) 113 mJ (Note 3) (TC = 25oC) - Derate above 25oC A 27 W 0.21 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDPF3N50NZ RJC Thermal Resistance, Junction to Case, Max. 4.6 RJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2010 Fairchild Semiconductor Corporation FDPF3N50NZ Rev. C1 1 Unit o C/W www.fairchildsemi.com FDPF3N50NZ N-Channel UniFETTM II MOSFET March 2013 Device Marking FDPF3N50NZ Device FDPF3N50NZ Package TO-220F Reel Size - Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit 500 - - V - 0.5 - V/oC A Off Characteristics BVDSS BVDSS TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250A, VGS = 0V, TC = 25oC IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V - - 1 VDS = 400V, VGS = 0V,TC = 125oC - - 10 IGSS Gate to Body Leakage Current VGS = ±25V, VDS = 0V - - ±10 ID = 250A, Referenced to 25oC A On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250A 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10V, ID = 1.5A - 2.1 2.5 gFS Forward Transconductance VDS = 20V, ID = 1.5A - 1.9 - S VDS = 25V, VGS = 0V f = 1MHz - 210 280 pF - 30 45 pF - 2.5 5 pF - 6.2 9 nC - 1.4 - nC - 3.1 - nC - 10 30 ns - 15 40 ns - 26 60 ns - 17 45 ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 400V ID = 3A VGS = 10V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 3A VGS = 10V, RGEN = 25 (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 3 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 12 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 3A - - 1.4 V trr Reverse Recovery Time - 190 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 3A dIF/dt = 100A/s - 0.52 - C Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 25mH, IAS = 3A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 3A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Essentially Independent of Operating Temperature Typical Characteristics ©2010 Fairchild Semiconductor Corporation FDPF3N50NZ Rev. C1 2 www.fairchildsemi.com FDPF3N50NZ N-Channel UniFETTM II MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 1 ID, Drain Current[A] ID, Drain Current[A] 10 0.1 o 150 C o 25 C *Notes: 1. 250s Pulse Test *Notes: 1. VDS = 20V 2. 250s Pulse Test o 2. TC = 25 C 0.03 0.1 0.1 25 1 10 VDS, Drain-Source Voltage[V] o -55 C 1 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 6 7 8 VGS, Gate-Source Voltage[V] 9 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 20 5.6 IS, Reverse Drain Current [A] RDS(ON) [], Drain-Source On-Resistance 10 4.8 4.0 VGS = 10V 3.2 VGS = 20V 2.4 o 150 C 1 *Notes: 1. VGS = 0V o 1.6 *Note: TC = 25 C 0 2 4 ID, Drain Current [A] 0.1 0.3 6 Figure 5. Capacitance Characteristics 400 VGS, Gate-Source Voltage [V] Capacitances [pF] Ciss 200 100 Coss ©2010 Fairchild Semiconductor Corporation FDPF3N50NZ Rev. C1 VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 Crss 0 1 10 VDS, Drain-Source Voltage [V] 1.5 10 300 0 0.1 2. 250s Pulse Test 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd *Note: 1. VGS = 0V 2. f = 1MHz o 25 C 30 3 *Note: ID = 3A 0 2 4 Qg, Total Gate Charge [nC] 6 7 www.fairchildsemi.com FDPF3N50NZ N-Channel UniFETTM II MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.6 2.4 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250A 0.90 -75 -50 0 50 100 o TJ, Junction Temperature [ C] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.15 2.0 1.6 1.2 0.8 0.4 -75 -50 150 Figure 9. Maximum Safe Operating Area vs. Case Temperature-FDPF3N50NZ *Notes: 1. VGS = 10V 2. ID = 1.5A 0 50 100 o TJ, Junction Temperature [ C] 150 Figure 10. Maximum Drain Current 4 20 30s 10 ID, Drain Current [A] ID, Drain Current [A] 100s 1ms 1 10ms Operation in This Area is Limited by R DS(on) 0.1 DC *Notes: o 3 2 1 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 25 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Unclamped Inductive Switching Capability IAS, AVALANCHE CURRENT(A) 4 3 TJ = 25oC 2 TJ = 125oC 1 0.01 0.1 1 tAV, TIME IN AVALANCHE(ms) ©2010 Fairchild Semiconductor Corporation FDPF3N50NZ Rev. C1 4 www.fairchildsemi.com FDPF3N50NZ N-Channel UniFETTM II MOSFET Typical Performance Characteristics (Continued) FDPF3N50NZ N-Channel UniFETTM II MOSFET Figure 12. Transient Thermal Response Curve- FDPF3N50NZ Thermal Response [ZJC] 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 t2 0.01 *Notes: o 1. ZJC(t) = 4.6 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) Single pulse 0.01 -5 10 ©2010 Fairchild Semiconductor Corporation FDPF3N50NZ Rev. C1 -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration [sec] 5 10 2 10 www.fairchildsemi.com FDPF3N50NZ N-Channel UniFETTM II MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2010 Fairchild Semiconductor Corporation FDPF3N50NZ Rev. C1 6 www.fairchildsemi.com FDPF3N50NZ N-Channel UniFETTM II MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop ©2010 Fairchild Semiconductor Corporation FDPF3N50NZ Rev. C1 7 www.fairchildsemi.com FDPF3N50NZ N-Channel UniFETTM II MOSFET Mechanical Dimensions TO-220M03 Dimensions in Millimeters ©2010 Fairchild Semiconductor Corporation FDPF3N50NZ Rev. C1 8 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2010 Fairchild Semiconductor Corporation FDPF3N50NZ Rev. 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