FDS3580 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. D D 7.6 A, 80 V. RDS(ON) = 0.029 Ω @ VGS = 10 V RDS(ON) = 0.033 Ω @ VGS = 6 V. • Low gate charge (34nC typical). • Fast switching speed. • High performance trench technology for extremely low RDS(ON). • High power and current handling capability. D D SO-8 S S S G Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA = 25°C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage V ID Drain Current ±20 7.6 - Continuous (Note 1a) - Pulsed PD Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, Tstg A 50 Operating and Storage Junction Temperature Range W 1 -55 to +150 °C °C/W °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS3580 FDS3580 13’’ 12mm 2500 units 2000 Fairchild Semiconductor International FDS3580 Rev. C FDS3580 December 2000 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS IAR Single Pulse Drain-Source VDD = 40 V, ID = 7.6 A Avalanche Energy Maximum Drain-Source Avalanche Current Off Characteristics VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C 245 mJ 7.6 A BVDSS ∆BVDSS ∆ TJ IDSS Drain-Source Breakdown Voltage IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 µA nA IGSSR Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA 4 V mV/°C 0.029 0.055 0.033 Ω Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current On Characteristics 80 V mV/°C 81 VDS = 64 V, VGS = 0 V 1 (Note 2) VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS(th) ∆VGS(th) ∆ TJ RDS(on) Gate Threshold Voltage ID(on) On-State Drain Current VGS = 10 V, ID = 7.6 A VGS = 10 V, ID = 7.6 A, TJ=125°C VGS = 6 V, ID = 7 A VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 7.6 A Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance 2 2.5 -7 0.022 0.037 0.024 30 A 28 S 1800 pF 180 pF 90 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 25 V, VGS = 0 V, f = 1.0 MHz (Note 2) VDD = 40 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω VDS = 40 V, ID = 7.6 A, VGS = 10 V 13 26 ns 8 20 ns 34 60 ns 16 30 ns 34 46 nC 6.1 nC 6.9 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.74 2.1 A 1.2 V Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50° C/W when mounted on a 1 in2 pad of 2 oz. copper. b) 105° C/W when mounted on a 0.04 in2 pad of 2 oz. copper. c) 125° C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDS3580 Rev. C FDS3580 Electrical Characteristics FDS3580 Typical Characteristics 60 2 ID, DRAIN CURRENT (A) 5.0V 6.0V 50 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 4.5V 40 30 4.0V 20 10 3.5V 0 1.8 VGS = 4.0V 1.6 1.4 4.5V 5.0V 1.2 6.0V 1 2 3 4 5 0 10 20 VDS, DRAIN-SOURCE VOLTAGE (V) 30 40 50 60 ID, DIRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 2 0.06 ID = 7.6A VGS = 10V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10V 1 0.8 0 1.6 1.4 1.2 1 0.8 0.6 0.4 ID = 3.8A 0.05 TA = 125oC 0.04 0.03 0.02 TA = 25oC 0.01 0 -50 -25 0 25 50 75 100 125 150 3 4 5 TJ, JUNCTION TEMPERATURE (oC) 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 TA = -55oC VDS = 5V 50 IS, REVERSE DRAIN CURRENT (A) 60 ID, DRAIN CURRENT (A) 7.0V 25oC o 125 C 40 30 20 10 0 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS3580 Rev. C (continued) 10 2400 ID = 7.6A f = 1MHz VGS = 0 V VDS = 10V 20V 8 2000 40V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) FDS3580 Typical Characteristics 6 4 CISS 1600 1200 2 800 COSS 400 CRSS 0 0 0 5 10 15 20 25 30 35 0 10 Qg, GATE CHARGE (nC) 30 40 50 60 70 80 Figure 8. Capacitance Characteristics. Figure 7. Gate-Charge Characteristics. 50 100 100µs 1ms RDS(ON) LIMIT 10 SINGLE PULSE RθJA =125°C/W TA = 25°C 40 POWER (W) 10ms 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE RθJA = 125oC/W 0.1 0.01 0.1 30 20 10 TA = 25oC 1 10 0 0.001 100 0.01 VDS, DRAIN-SOURCE VOLTAGE (V) r(t), NORM ALIZED EFFECTIVE Figure 9. Maximum Safe Operating Area. TR ANSI ENT TH ER MAL RESISTANC E ID, DRAIN CURRENT (A) 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.1 1 10 SINGLE PULSE TIME (SEC) 100 300 Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 0.2 0.1 0.05 D = 0.5 R θJ A (t) = r(t) * R θJ A R θJ A= 125°C /W 0.2 0.1 00 .5 P(pk ) 0.0 2 0.02 t1 0.01 0.01 S i n g le P ul s e t2 TJ - TA = P * RθJA ( )t 0.0 05 D u t y C y c l e, D = t 1 /t2 0.0 02 0.0 01 0.0001 0.0 01 0.01 0.1 1 10 100 300 t 1, TI M E (s e c ) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDS3580 Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G