FDS6299S 30V N-Channel PowerTrench® SyncFET™ General Description Features The FDS6299S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6299S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode. • • Synchronous Rectifier for DC/DC Converters – • Notebook Vcore low side switch • Point of load low side switch D RDS(ON) = 3.9 mΩ @ VGS = 10 V RDS(ON) = 5.1 mΩ @ VGS = 4.5 V Applications D 21 A, 30 V. • Includes SyncFET Schottky body diode • High performance trench technology for extremely low RDS(ON) and fast switching • High power and current handling capability • 100% RG (Gate Resistance) tested • Termination is Lead-free and RoHS Compliant D D SO-8 S S S G Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current 21 A – Continuous (Note 1a) – Pulsed PD 105 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, TSTG W 1 –55 to +150 °C (Note 1a) 50 °C/W (Note 1) 25 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6299S FDS6299S 13’’ 12mm 2500 units ©2005 Fairchild Semiconductor Corporation FDS6299S Rev C (W) FDS6299S July 2005 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 1 mA 30 Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA ID = 1 mA ID = 1 mA, Referenced to 25°C V mV/°C 32 On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, gFS Forward Transconductance 1 1.7 3 V ID = 1 mA, Referenced to 25°C –4 VGS = 10 V, ID = 21 A ID = 19 A VGS = 4.5 V, VGS=10 V, ID =21 A, TJ=125°C 3.3 4.1 4.5 VDS = 10 V, 94 S 3880 pF 1030 pF ID = 21 A mV/°C 3.9 5.1 5.6 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time VDS = 15 V, f = 1.0 MHz V GS = 0 V, 310 VGS = 15 mV, f = 1.0 MHz 0.4 1.8 pF 3.1 Ω (Note 2) VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 12 22 ns 12 22 ns td(off) Turn–Off Delay Time 60 96 ns tf Turn–Off Fall Time 35 56 ns Qg(TOT) Total Gate Charge at VGS=10V 58 81 nC 43 VDS = 15 V, ID = 21 A Qg Total Gate Charge at VGS=5V 31 Qgs Gate–Source Charge 11 nC nC Qgd Gate–Drain Charge 8 nC Drain–Source Diode Characteristics and Maximum Ratings VSD Drain–Source Diode Forward Voltage VGS = 0 V, trr Diode Reverse Recovery Time IF = 21 A, dIF/dt = 300 A/µs IRM Diode Reverse Recovery Current Qrr Diode Reverse Recovery Charge IS = 3.5 A (Note 2) 420 32 (Note 3) 700 mV ns 2.1 A 34 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when mounted on a 1 in2 pad of 2 oz copper b) 105°/W when mounted on a .04 in2 pad of 2 oz copper c) 125°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. 3. See “SyncFET Schottky body diode characteristics” below. FDS6299S Rev C (W) FDS6299S Electrical Characteristics FDS6299S Typical Characteristics 105 2.4 VGS = 10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.5V 90 ID, DRAIN CURRENT (A) 4.5V 4.0V 75 60 3.0V 45 30 15 VGS = 3.0V 2.2 2 1.8 3.5V 1.6 4.0V 1.4 4.5V 5.0V 1.2 6.0V 10V 1 2.5V 0 0.8 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 0 Figure 1. On-Region Characteristics. 45 60 75 ID, DRAIN CURRENT (A) 90 105 0.012 ID = 21A VGS =10V ID = 10.5A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 1.4 1.2 1 0.8 0.6 -50 0.01 0.008 TA = 125oC 0.006 0.004 o TA = 25 C 0.002 -25 0 25 50 75 o TJ, JUNCTION TEMPERATURE ( C) 100 125 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 105 100 VDS = 5V VGS = 0V IS, REVERSE DRAIN CURRENT (A) 90 ID, DRAIN CURRENT (A) 15 75 60 45 o o TA = 125 C -55 C 30 15 10 o TA = 125 C 1 25oC 0.1 -55oC 0.01 o 25 C 0 0.001 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.8 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6299S Rev C (W) FDS6299S Typical Characteristics (continued) 4800 4000 8 VDS = 10V 20V 6 15V 4 Ciss 3200 2400 Coss 1600 2 800 Crss 0 0 0 10 20 30 40 Qg, GATE CHARGE (nC) 50 0 60 Figure 7. Gate Charge Characteristics. 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) 50 RDS(ON) LIMIT 100 100us 1ms 10ms 100ms 10 1s 10s 1 DC VGS = 10V SINGLE PULSE o RθJA = 125 C/W 0.1 o TA = 25 C 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V ID = 21A CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJC(t) = r(t) * RθJC RθJC = 125 °C/W 0.2 0.1 0.1 0.05 P(pk 0.02 0.01 t1 t2 0.01 TJ - TC = P * RθJC(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6299S Rev C (W) FDS6299S Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 CURRENT : 0.8A/div IDSS, REVERSE LEAKAGE CURRENT (A) Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6299S. TA = 125oC 0.01 TA = 100oC 0.001 0.0001 TA = 25oC 0.00001 0 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30 Figure 13. SyncFET body diode reverse leakage versus drain-source voltage and temperature. TIME : 12.5ns/div Figure 12. FDS6299S SyncFET body diode reverse recovery characteristic. FDS6299S Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ EnSigna™ ImpliedDisconnect™ FACT™ IntelliMAX™ FACT Quiet Series™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16