May 2008 FDS6984AS Dual Notebook Power Supply N-Channel PowerTrench® SyncFET™ General Description Features The FDS6984AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6984AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. • Q2: Optimized to minimize conduction losses Includes SyncFET Schottky diode 8.5A, 30V RDS(on) max= 20 mΩ @ VGS = 10V RDS(on) max= 28 mΩ @ VGS = 4.5V • Q1: Optimized for low switching losses Low gate charge (8nC typical) RDS(on) max= 31 mΩ @ VGS = 10V 5.5A, 30V The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes a patented combination of a MOSFET monolithically integrated with a Schottky diode. RDS(on) max= 40 mΩ @ VGS = 4.5V • RoHS Compliant D1 D1 4 5 D2 Q1 6 D2 3 2 7 SO-8 S2 G2 S1 G1 Absolute Maximum Ratings Symbol 8 Drain-Source Voltage Gate-Source Voltage ID Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation PD Q2 (Note 1a) Q1 Units V V 30 30 ±20 ±20 8.5 30 5.5 20 A 2 1.6 1 0.9 W –55 to +150 °C (Note 1a) 78 °C/W (Note 1) 40 °C/W (Note 1a) (Note 1b) (Note 1c) TJ, TSTG 1 TA = 25°C unless otherwise noted Parameter VDSS VGSS Q2 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6984AS FDS6984AS 13” 12mm 2500 units ©2008 Fairchild Semiconductor Corporation FDS6984AS Rev A1(X) FDS6984AS J TA = 25°C unless otherwise noted Symbol Test Conditions Parameter Type Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 1 mA VGS = 0 V, ID = 250 µA Q2 Q1 IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V Q2 Q1 Q2 2.3 Q1 79 VDS = 24 V, VGS = 0 V, TJ = 125°C IGSS Gate-Body Leakage On Characteristics VGS = ±20 V, VDS = 0 V All VDS = VGS, ID = 1 mA VDS = VGS, ID = 250 µA ID = 1 mA, Referenced to 25°C ID = 250 uA, Referenced to 25°C VGS = 10 V, ID = 8.5 A VGS = 10 V, ID = 8.5 A, TJ = 125°C VGS = 4.5 V, ID = 7 A VGS = 10 V, ID = 5.5 A VGS = 10 V, ID = 5.5 A, TJ = 125°C VGS = 4.5 V, ID = 4.6 A VGS = 10 V, VDS = 5 V Q2 Q1 Q2 Q1 Q2 30 30 V 500 1 µA mA nA ±100 nA 3 3 V (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On-State Drain Current gFS Forward Transconductance VDS = 5 V, ID = 8.5 A VDS = 5 V, ID = 5.5 A 1 1 Q1 Q2 Q1 Q2 Q1 1.7 1.8 –3 –4 17 24 21 26 34 32 30 20 mV/°C 20 32 28 31 43 40 mΩ A 25 18 S 530 420 170 120 60 50 3.1 2.2 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS = 15 V, VGS = 0 V, f = 1.0 MHz VGS = 15mV, f = 1.0 MHz Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 pF pF Ω FDS6984AS Rev A1 (X) FDS6984AS Electrical Characteristics Symbol (continued) Parameter Switching Characteristics TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units (Note 2) td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg(TOT) Total Gate Charge, Vgs = 10V Qg Total Gate Charge, Vgs = 5V Qgs Gate-Source Charge Qgd Gate-Drain Charge Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6 Ω VDD = 15 V, ID = 1 A, VGS = 4.5V, RGEN = 6 Ω Q2: VDS = 15 V, ID = 8.5 A Q1: VDS = 15 V, ID = 5.5 A 8 9 5 6 23 22 4 2 9 10 7 11 13 13 4 3 10 8 5 4 1.5 1.3 1.9 1.5 16 18 10 12 37 35 8 4 18 19 14 20 24 24 8 6 14 11 8 6 ns ns ns ns ns ns ns ns nC nC nC nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr VSD Reverse Recovery Charge Drain-Source Diode Forward Voltage IF = 10A, dIF/dt = 300 A/µs Q2 Q1 Q2 3.0 1.3 13 ns 6 Q1 17 nC ns Q2 Q1 6 0.6 0.8 (Note 3) IF = 5.5A, dIF/dt = 100 A/µs (Note 3) VGS = 0 V, IS = 2.3 A VGS = 0 V, IS = 1.3 A (Note 2) (Note 2) 0.7 1.2 A nC V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. See “SyncFET Schottky body diode characteristics” below. 3. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS6984AS Rev A 1(X) FDS6984AS Electrical Characteristics FDS6984AS Typical Characteristics: Q2 2 30 VGS = 10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 25 VGS = 3.0V 3.5V 4.0V 6.0V 4.5V 20 3.0V 15 10 5 2.5V 0 1.8 1.6 3.5V 1.4 4.0V 5.0V 6.0V 10V 1 0.8 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 3 0 Figure 1. On-Region Characteristics. 10 15 20 ID, DRAIN CURRENT (A) 25 30 0.06 ID = 8.5A VGS = 10V RDS(ON), ON-RESISTANCE (OHM) ID = 4.25A 1.45 1.3 1.15 1 0.85 0.7 0.05 0.04 TA = 125oC 0.03 0.02 TA = 25oC 0.01 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 30 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 25 ID, DRAIN CURRENT (A) 5 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 1.2 20 15 o o TA = 125 C -55 C 10 25oC 5 0 10 1 TA = 125oC o 25 C 0.1 -55oC 0.01 0.001 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) 1 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6984AS Rev A1 (X) 800 f = 1MHz VGS = 0 V ID =8.5A 8 VDS = 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 15V 4 600 Ciss 400 Coss 200 2 Crss 0 0 0 2 4 6 8 Qg, GATE CHARGE (nC) 10 12 0 Figure 7. Gate Charge Characteristics. 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics. 50 100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 100µs ID, DRAIN CURRENT (A) 5 1ms 10 10ms 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE o RθJA = 135 C/W 0.1 TA = 25oC 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. 100 SINGLE PULSE RθJA = 135°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. FDS6984AS Rev A1 (X) FDS6984AS Typical Characteristics: Q2 FDS6984AS Typical Characteristics Q1 2.4 20 6.0V 16 ID, DRAIN CURRENT (A) 4.0V VGS = 3.0V 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 3.5V 12 8 3.0V 4 2.5V 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 1.6 3.5V 1.4 4.0V 4.5V 5.0V 1.2 6.0V 10V 1 0 5 10 ID, DRAIN CURRENT (A) 15 20 Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.1 1.6 ID = 5.5A VGS = 10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 3 Figure 11. On-Region Characteristics. 1.4 1.2 1 0.8 0.6 ID = 2.75A 0.08 0.06 TA = 125oC 0.04 o TA = 25 C 0.02 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 Figure 13. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 100 20 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 16 ID, DRAIN CURRENT (A) 2 0.8 0 0 2.2 12 8 o TA = 125 C -55oC 4 10 1 TA = 125oC 0.1 o 25 C 0.01 -55oC 0.001 25oC 0.0001 0 0.5 1.5 2.5 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 15. Transfer Characteristics. 4.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6984AS Rev A1 (X) FDS6984AS Typical Characteristics Q1 600 f = 1MHz VGS = 0 V ID = 5.5A 500 8 VDS = 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 15V 4 2 400 300 Coss 200 100 Crss 0 0 0 2 4 6 Qg, GATE CHARGE (nC) 8 0 10 Figure 17. Gate Charge Characteristics. 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 18. Capacitance Characteristics. 50 RDS(ON) LIMIT 10 10ms P(pk), PEAK TRANSIENT POWER (W) 100 100µs 1ms 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE RθJA = 135oC/W 0.1 o TA = 25 C 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJA = 135°C/W TA = 25°C 40 30 20 10 0 0.001 Figure 19. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) Ciss 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 20. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 135°C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6984AS Rev A1 (X) FDS6984AS Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 3A/DIV IDSS, REVERSE LEAKAGE CURRENT (A) Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 22 shows the reverse recovery characteristic of the FDS6984AS. 0.01 125oC 0.001 100oC 0.0001 0.00001 25oC 0.000001 0 10 20 VDS, REVERSE VOLTAGE (V) 30 Figure 24. SyncFET body diode reverse leakage versus drain-source voltage and temperature. 10nS/DIV Figure 22. FDS6984AS SyncFET body diode reverse recovery characteristic. 3A/DIV For comparison purposes, Figure 23 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6984A). 0V 10nS/DIV Figure 23. Non-SyncFET (FDS6984A) body diode reverse recovery characteristic. FDS6984AS Rev A1 (X) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDS6984AS Rev.A1(X)