FDT3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.7 A, 100 V. RDS(ON) = 120 mΩ @ VGS = 10 V RDS(ON) = 130 mΩ @ VGS = 6 V • Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • Low gate charge (14nC typ) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability in a widely used surface mount package Applications • DC/DC converter • Motor driving D D D D S S D G SOT-223 G D SOT-223 * G G S (J23Z) Absolute Maximum Ratings Symbol S TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current (Note 1a) 3.7 A PD Maximum Power Dissipation (Note 1a) 3.0 (Note 1b) 1.3 – Continuous – Pulsed 20 (Note 1c) TJ, TSTG W 1.1 –55 to +150 °C (Note 1a) 42 °C/W (Note 1) 12 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 3612 FDT3612 13’’ 12mm 2500 units 2001 Fairchild Semiconductor Corporation FDT3612 Rev. C1 (W) FDT3612 March 2001 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) W DSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, VDD = 50 V, ID= 3.7 A 90 mJ 3.7 A Off Characteristics VGS = 0 V, ID = 250 µA BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V IGSSF Gate–Body Leakage, Forward VGS = 20 V, IGSSR Gate–Body Leakage, Reverse VGS = –20 V, On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) 100 ID = 250 µA, Referenced to 25°C V 106 mV/°C 10 µA VDS = 0 V 100 nA VDS = 0 V –100 nA 4 V (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C ID(on) On–State Drain Current VGS = 10 V, ID = 3.7 A ID = 3.5 A VGS = 6 V, VGS = 10 V, ID = 3.7A, TJ = 125°C VGS = 10 V, VDS = 10 V gFS Forward Transconductance VDS = 10 V, ID = 3.7 A 2 2.5 –6 88 94 170 mV/°C 120 130 245 10 mΩ A 11 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time VDS = 50 V, f = 1.0 MHz V GS = 0 V, 632 pF 40 pF 20 pF (Note 2) VDD = 50 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 8.5 17 ns 2 4 ns ns td(off) Turn–Off Delay Time 23 37 tf Turn–Off Fall Time 4.5 9 ns Qg Total Gate Charge 14 20 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 50 V, VGS = 10 V ID = 3.7 A, 2.4 nC 3.8 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A (Note 2) 0.75 2.5 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 42°C/W when mounted on a 1in2 pad of 2 oz copper b) 95°C/W when mounted on a .0066 2 in pad of 2 oz copper c) 110°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDT3612 Rev. C1 (W) FDT3612 Electrical Characteristics FDT3612 Typical Characteristics 1.8 5.0V ID, DRAIN CURRENT (A) VGS = 10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 4.5V 16 12 4.0V 8 4 3.5V 1.6 VGS = 4.0V 1.4 4.5V 5.0V 6.0V 1.2 0.8 0 0 2 4 6 0 8 4 8 12 16 20 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.4 2.2 ID = 3.7A VGS = 10V 2 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10V 1 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 ID = 1.9 A 0.3 TA = 125oC 0.2 TA = 25oC 0.1 0 150 3 4 5 6 7 8 9 10 o TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 20 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 10V 16 12 8 TA = 125oC 25oC 4 -55oC VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 2 2.5 3 3.5 4 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDT3612 Rev. C1 (W) FDT3612 Typical Characteristics 800 ID = 3.7A CISS 8 60V 80V 6 f = 1MHz VGS = 0 V 700 VDS = 40V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 4 600 500 400 300 200 CRSS 2 COSS 100 0 0 0 2 4 6 8 10 12 14 0 16 20 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 80 100 P(pk), PEAK TRANSIENT POWER (W) 40 RDS(ON) LIMIT 100µs 10 1ms 10ms 100ms 1 1s 10s VGS = 10V SINGLE PULSE RθJA = 110oC/W 0.1 DC TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 110°C/W TA = 25°C 30 20 10 0 0.001 1000 0.01 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 60 Figure 8. Capacitance Characteristics. 100 ID, DRAIN CURRENT (A) 40 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 110°C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDT3612 Rev. C1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H2