FDW264P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). • –9.7 A, –20 V. RDS(ON) = 10.0 mΩ @ VGS = –4.5 V RDS(ON) = 14.5 mΩ @ VGS = –2.5 V • Extended VGSS range (±12V) for battery applications Applications • Load switch • Motor drive • • • DC/DC conversion • Power management Low gate charge High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package D S S D G S S D TSSOP-8 5 4 6 3 7 2 8 1 Pin 1 Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter –20 V VGSS Gate-Source Voltage ± 12 V ID Drain Current –9.7 A – Continuous (Note 1) – Pulsed PD –50 Power Dissipation TJ, TSTG (Note 1a) 1.3 (Note 1b) 0.6 W –55 to +150 °C (Note 1a) 96 °C/W (Note 1b) 208 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 264P FDW264P 13’’ 16mm 3000 units 2003 Fairchild Semiconductor Corporation FDW264P Rev. C (W) FDW264P November 2003 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = –250 µA Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA Gate–Body Leakage VGS = ±12 V, VDS = 0 V ±100 nA –1.5 V On Characteristics –20 ID = –250 µA, Referenced to 25°C V –17 mV/°C (Note 2) VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C VGS(th) ∆VGS(th) ∆TJ Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient RDS(on) Static Drain–Source On–Resistance ID = –9.7 A VGS = –4.5 V, ID = –8.4 A VGS = –2.5 V, VGS = –4.5 V, ID = –9.7 A, TJ= 125°C ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –10 V, ID = –9.7 A VDS = –10 V, f = 1.0 MHz V GS = 0 V, VGS = 15mV, –0.6 –0.9 3 7.5 9.0 10.5 mV/°C 10 14.5 –50 mΩ A 71 S 7225 pF 1030 pF 900 pF f = 1.0 MHz 10 Ω ID = –1 A, RGEN = 6 Ω Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics (Note 2) td(on) Turn–On Delay Time 17 31 ns tr Turn–On Rise Time 17 31 ns td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = –10 V, VGS = –4.5 V, VDS = –10 V, VGS = –5 V ID = –9.7 A, 480 770 ns 265 422 ns 95 135 nC 13 nC 24 nC Drain–Source Diode Characteristics and Maximum Ratings IS Trr Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –1.1 A Voltage Reverse Recovery Time I = –9.7 A, Qrr Reverse Recovery Charge VSD –1.1 (Note 2) F diF/dt = 100 A/µs (Note 3) –0.6 –1.2 A V 170 ns 220 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA is 96°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4. b) RθJA is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDW264P Rev. C (W) FDW264P Electrical Characteristics FDW264P Typical Characteristics 1.6 VGS = -4.5V -2.0V 40 -3.0V VGS = - 2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 50 -2.5V 30 20 10 -1.5V 1.4 -3.0V -3.5V 1 0 0.5 1 1.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 2 Figure 1. On-Region Characteristics. -4.5V 10 20 30 -ID, DRAIN CURRENT (A) 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.03 1.4 ID = -9.7A VGS = - 4.5V 1.3 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.0V 0.8 0 1.2 1.1 1 0.9 ID = -4.85A 0.02 TA = 125oC 0.01 o TA = 25 C 0 0.8 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 0 150 Figure 3. On-Resistance Variation with Temperature. 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 50 100 VGS = 0V -IS, REVERSE DRAIN CURRENT (A) VDS = -5V 40 -ID, DRAIN CURRENT (A) -2.5V 1.2 30 o TA = 125 C 20 o -55 C 10 o 25 C 0 10 o TA = 125 C 1 25oC 0.1 o -55 C 0.01 0.001 0.0001 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.5 1 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.5 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW264P Rev. C (W) FDW264P Typical Characteristics 11000 10 8 9000 -15V 6 -10V 4 2 8000 Ciss 7000 6000 5000 4000 Coss 3000 2000 Crss 1000 0 0 0 40 80 120 Qg, GATE CHARGE (nC) 160 0 200 Figure 7. Gate Charge Characteristics. 20 50 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 100µs 1ms 10ms 100ms 1s 10s DC 10 1 VGS = -4.5V SINGLE PULSE o RθJA = 208 C/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJA = 208°C/W TA = 25°C 40 30 20 10 0 0.0001 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 5 10 15 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 100 -ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V 10000 VDS = -5V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) ID = -9.7A 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA 0.2 0.1 o RθJA = 208 C/W 0.1 0.05 P(pk) 0.02 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW264P Rev. C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOSTM HiSeC™ EnSignaTM I2C™ FACT™ ImpliedDisconnect™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I7