FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ293P minimizes both PCB space and rDS(on). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low rDS(on). • –4.6 A, –20 V rDS(on) = 46 mΩ @ VGS = –4.5 V rDS(on) = 72 mΩ @ VGS = –2.5 V • Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 • Ultra-thin package: less than 0.85 mm height when mounted to PCB Applications • Outstanding thermal transfer characteristics: 4 times better than SSOT-6 • Battery management • Load switch • Battery protection • Ultra-low Qg x rDS(on) figure-of-merit • High power and current handling capability. S G AT E G D Top Bottom Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter Ratings Units VDS Drain-Source Voltage –20 V VGS Gate-Source Voltage ±12 V ID Drain Current –4.6 A – Continuous (Note 1a) – Pulsed –10 Power Dissipation for Single Operation PD TJ, TSTG 1.7 W –55 to +150 °C (Note 1a) 72 °C/W (Note 1) 2 (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity B FDZ293P 13” 8mm 10000 units 2005 Fairchild Semiconductor Corporation FDZ293P Rev. D (W) FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET Feb 2006 Symbol A = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Gate–Body Leakage. BVDSS On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) VGS = 0 V, ID = –250 µA –20 ID = –250 µA, Referenced to 25°C V –13 mV/°C VDS = –16 V, VGS = 0 V –1 µA VGS = ±12 V, VDS = 0 V ±100 nA (Note 2) VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance –0.6 VGS = –4.5 V, ID = –4.6 A, VGS = –2.5 V, ID = –3.6A, VGS = –4.5 V, ID = –4.6 A, TJ=125°C –0.8 3 –1.5 36 58 47 46 72 65 V mV/°C mΩ ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –4.6 A –10 13 S A VDS = –10 V, f = 1.0 MHz V GS = 0 V, 754 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) tf Turn–Off Delay Time Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge 167 pF 92 pF Ω VGS = 15 mV, f = 1.0 MHz 6 VDD = –10 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω 11 20 ns 10 20 ns 22 35 ns 17 31 ns 7.5 11 nC (Note 2) VDS = –10V, VGS = –4.5 V ID = –4.6 A, 1.5 nC 2.0 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –1.4 A Voltage Diode Reverse Recovery Time IF = –4.6 A, Diode Reverse Recovery Charge diF/dt = 100 A/µs VSD trr Qrr –0.7 (Note 2) –1.4 A –1.2 V 17 5 nS nC Notes: 1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user' s board design. a) 2. 72°C/W when 2 mounted on a 1in pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB b) 157°C/W when mounted on a minimum pad of 2 oz copper Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDZ293P Rev. D (W) FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET Electrical Characteristics T 2.6 VGS = -4.5V -3.0V -3.5V 8 -2.5V NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 10 -2.0V 6 4 2 2.4 VGS = -2.0V 2.2 2 1.8 1.6 -2.5V 1.4 -3.0V -3.5V 1.2 -4.5V 1 0.8 0 0 0.5 1 0 1.5 2 Figure 1. On-Region Characteristics. 8 0.18 ID = -4.6A VGS = -4.5V 1.4 ID = -2.3 A rDS(on), ON-RESISTANCE (OHM) NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.5 1.3 1.2 1.1 1 0.9 0.8 0.15 0.12 0.09 TA = 125oC 0.06 TA = 25oC 0.7 -50 -25 0 25 50 75 100 125 0.03 150 1.5 TJ, JUNCTION TEMPERATURE (oC) 2 2.5 3 3.5 4 4.5 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 10 -IS, REVERSE DRAIN CURRENT (A) 8 6 4 o 25 C o TA = 125 C 2 o -55 C 0 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 -VGS, GATE TO SOURCE VOLTAGE (V) VDS = -5V -ID, DRAIN CURRENT (A) 4 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 VGS = 0V 1 o TA = 125 C 0.1 o 25 C 0.01 o -55 C 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ293P Rev. D (W) FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET Typical Characteristics 1200 ID = -4.6A VDS = -5V -10V f = 1MHz VGS = 0 V 1000 4 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 -15V 3 2 1 Ciss 800 600 400 Coss 200 Crss 0 0 2 4 6 8 0 10 0 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 10 15 rDS(on) LIMIT 100µs 1 DC VGS = -4.5V SINGLE PULSE RθJA = 157oC/W 0.1 P(pk), PEAK TRANSIENT POWER (W) 20 10 10s 1ms 10ms 100ms 1s TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 157°C/W TA = 25°C 15 10 5 0 0.01 0.1 1 10 100 1000 t1, TIME (sec) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 Figure 8. Capacitance Characteristics. 100 -ID, DRAIN CURRENT (A) 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 157 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ293P Rev. D (W) FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET Typical Characteristics FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET Dimensional Pad and Layout FDZ293P Rev. D (W)