Vishay FEP30JP Dual common cathode ultrafast rectifier Datasheet

FEP30AP thru FEP30JP
Vishay General Semiconductor
Dual Common Cathode Ultrafast Rectifier
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low thermal resistance
• High forward surge capability
3
2
• Solder dip 260 °C, 40 s
1
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
TO-247AD (TO-3P)
PIN 1
PIN 2
PIN 3
CASE
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, dc-to-dc
converters, and other power switching application.
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
50 V to 600 V
IFSM
300 A
trr
35 ns, 50 ns
VF
0.95 V, 1.3 V, 1.5 V
TJ max.
150 °C
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94 V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
SYMBOL
FEP
30AP
FEP
30BP
FEP
30CP
FEP
30DP
FEP
30FP
FEP
30GP
FEP
30HP
FEP
30JP
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
300
400
500
600
V
Maximum RMS voltage
VRMS
35
70
105
140
210
280
350
420
V
Maximum DC blocking voltage
VDC
50
100
150
200
300
400
500
600
V
Maximum average forward rectified current
at TC = 100 °C
IF(AV)
30
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
300
A
TJ, TSTG
- 55 to + 150
°C/W
PARAMETER
Operating storage and temperature range
Document Number: 88597
Revision: 08-Apr-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
FEP30AP thru FEP30JP
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
Maximum instantaneous
forward voltage per diode
15.0 A
Maximum DC reverse current
at rated DC blocking voltage
per diode
SYMBOL
FEP
30AP
FEP
30BP
VF
FEP
30CP
FEP
30DP
FEP
30FP
0.95
FEP
30GP
FEP
30HP
1.3
TC = 25 °C
FEP
30JP
UNIT
1.5
V
10
IR
μA
TC = 100 °C
500
Maximum reverse recovery
time per diode
IF = 0.5 A,
IR = 1.0 A,
Irr = 0.25 A
trr
Typical junction capacitance
per diode
4.0 V, 1 MHz
CJ
35
50
ns
175
145
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
FEP
30AP
FEP
30BP
FEP
30CP
FEP
30DP
RθJC (1)
Typical thermal resistance per diode
FEP
30FP
FEP
30GP
FEP
30HP
FEP
30JP
1.0
UNIT
°C/W
Note
(1) Thermal resistance from junction to case per diode mounted on heatsink
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-247AD
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
6.15
30
30/tube
Tube
FEP30JP-E3/45
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
300
36
Peak Forward Surge Current (A)
Average Forward Current (A)
Resistive or Inductive Load
30
24
12
6
TC = 100 °C
8.3 ms Single Half Sine-Wave
250
200
150
100
50
0
0
0
50
100
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
www.vishay.com
2
150
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88597
Revision: 08-Apr-10
FEP30AP thru FEP30JP
Vishay General Semiconductor
1000
Pulse Width = 300 μs
1 % Duty Cycle
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TJ = 125 °C
10
TJ = 25 °C
1
50 V to 200 V
300 V to 400 V
500 V to 600 V
0.1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
50 V to 400 V
500 V to 600 V
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
1
10
100
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Instantaneous Reverse Current (μA)
1000
50 V to 200 V
300 V to 600 V
TJ = 125 °C
100
10
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-247AD (TO-3P)
0.645 (16.4)
0.625 (15.9)
0.245 (6.2)
0.225 (5.7)
0.323 (8.2)
0.313 (7.9)
0.203 (5.16)
0.193 (4.90)
30°
0.078 (1.98) REF.
10
0.170
(4.3)
0.840 (21.3)
0.142 (3.6)
0.138 (3.5)
0.820 (20.8)
1
2
10° TYP.
Both Sides
3
1° REF.
Both Sides
0.086 (2.18)
0.076 (1.93)
0.127 (3.22)
0.160 (4.1)
0.140 (3.5)
0.117 (2.97)
0.118 (3.0)
0.108 (2.7)
0.795 (20.2)
0.775 (19.6)
0.048 (1.22)
0.044 (1.12)
0.225 (5.7)
0.205 (5.2)
Document Number: 88597
Revision: 08-Apr-10
0.030 (0.76)
0.020 (0.51)
PIN 1
PIN 2
PIN 3
CASE
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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