FGA15N120ANTD / FGA15N120ANTD_F109 tm 1200V NPT Trench IGBT Features Description • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 1.9V @ IC = 15A and TC = 25°C Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. • Low switching loss: Eoff, typ = 0.6mJ @ IC = 15A and TC = 25°C This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc. • Extremely enhanced avalanche capability C G TO-3P G C E E Absolute Maximum Ratings Symbol Description VCES Collector-Emitter Voltage VGES Gate-Emitter Voltage IC Collector Current Collector Current FGA15N120ANTD Units 1200 V ± 20 V @ TC = 25°C 30 A @ TC = 100°C 15 A 45 A 15 A 45 A ICM Pulsed Collector Current IF Diode Continuous Forward Current IFM Diode Maximum Forward Current PD Maximum Power Dissipation @ TC = 25°C 186 W Maximum Power Dissipation @ TC = 100°C 74 W (Note 1) @ TC = 100°C TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 °C Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC Thermal Resistance, Junction-to-Case for IGBT -- 0.67 °C/W RθJC Thermal Resistance, Junction-to-Case for Diode -- 2.88 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature ©2007 Fairchild Semiconductor Corporation FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1 1 www.fairchildsemi.com FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT May 2006 Device Marking Device Package Reel Size Tape Width Quantity FGA15N120ANTD FGA15N120ANTD TO-3P -- -- 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 3 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 250 nA On Characteristics VGE(th) G-E Threshold Voltage IC = 15mA, VCE = VGE VCE(sat) Collector to Emitter Saturation Voltage IC = 15A, 4.5 6.5 8.5 V VGE = 15V -- 1.9 2.4 V IC = 15A, VGE = 15V, TC = 125°C -- 2.2 -- V IC = 30A, -- 2.3 -- V -- 2650 -- pF -- 143 -- pF -- 96 -- pF -- 15 -- ns -- 20 -- ns VGE = 15V Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time -- 160 -- ns tf Fall Time -- 100 180 ns Eon Turn-On Switching Loss -- 3 4.5 mJ Eoff Turn-Off Switching Loss -- 0.6 0.9 mJ Ets Total Switching Loss -- 3.6 5.4 mJ td(on) Turn-On Delay Time -- 15 -- ns tr Rise Time -- 20 -- ns td(off) Turn-Off Delay Time -- 170 -- ns tf Fall Time -- 150 -- ns Eon Turn-On Switching Loss -- 3.2 4.8 mJ Eoff Turn-Off Switching Loss -- 0.8 1.2 mJ Ets Total Switching Loss -- 4.0 6.0 mJ Qg Total Gate Charge -- 120 180 nC Qge Gate-Emitter Charge -- 16 22 nC Qgc Gate-Collector Charge -- 50 65 nC FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1 VCC = 600 V, IC = 15A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 600 V, IC = 15A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 600 V, IC = 15A, VGE = 15V 2 www.fairchildsemi.com FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT Package Marking and Ordering Information C Symbol VFM trr Irr Qrr = 25°C unless otherwise noted Parameter Min. Typ. Max. Units TC = 25°C -- 1.7 2.7 V TC = 125°C -- 1.8 -- TC = 25°C -- 210 330 TC = 125°C -- 280 -- Diode Peak Reverse Recovery Current TC = 25°C -- 27 40 TC = 125°C -- 31 -- Diode Reverse Recovery Charge TC = 25°C -- 2835 6600 TC = 125°C -- 4340 -- Diode Forward Voltage Diode Reverse Recovery Time FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1 Test Conditions IF = 15A IF = 15A dI/dt = 200 A/μs 3 ns A nC www.fairchildsemi.com FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT Electrical Characteristics of DIODE T Figure 1. Typical Output Characteristics 200 150 o T C = 25 C Common Emitter VGE = 15V 20V 17V 15V o 12V TC = 25 C 120 o 150 Collector Current , IC [A] Collector Current, IC [A] Figure 2. Typical Saturation Voltage Characteristics V GE = 10V 100 50 TC = 125 C 90 60 30 0 0 2 4 6 8 0 10 0 2 Collector-Emitter Voltage, V CE [V] Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter V GE = 15V Common Emitter o T C = 25 C 16 IC = 24A 2.5 IC = 15A 2.0 12 8 4 24A 50 75 100 125 0 150 4 Case Temperature, TC [ C] Figure 5. Saturation Voltage vs. VGE 12 16 20 Figure 6. Capacitance Characteristics 3500 Common Emitter o TC = 125 C 3000 Ciss 2500 12 Capacitance [pF] Collector-Emitter Voltage, VCE [V] 8 Gate-Emitter Voltage, V GE [V] o 16 15A I C = 7.5A 0 1.5 25 6 Figure 4. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 3.0 4 Collector-Emitter Voltage, VCE [V] 8 4 24A 15A 0 4 8 Common Emitter VGE = 0V, f = 1MHz 1500 o T C = 25 C 1000 Coss 500 IC = 7.5A 0 2000 Crss 0 12 16 0.1 20 Gate-Emitter Voltage, V GE [V] FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1 1 10 Collector-Emitter Voltage, VCE[V] 4 www.fairchildsemi.com FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT Typical Performance Characteristics (Continued) Figure 7. Turn-On Characteristics vs. Gate Resistance Figure 8. Turn-Off Characteristics vs. Gate Resistance 100 Common Emitter V CC = 600V, V GE = 15V IC = 15A 1000 td(off) o T C = 25 C 10 o Switching Time [ns] Switching Time [ns] tr td(on) Common Emitter V CC = 600V, V GE = 15V T C = 125 C 100 tf IC = 15A o T C = 25 C o T C = 125 C 10 1 0 0 10 20 30 40 50 60 10 20 70 Gate Resistance, RG[Ω ] Figure 9. Switching Loss vs. Gate Resistance 50 60 70 Common Emitter V GE = 15V, R G = 10 Ω o T C = 25 C 100 IC = 15A o T C = 125 C o T C = 25 C Switching Time [ns] o Switching Loss [mJ] 40 Figure 10. Turn-On Characteristics vs. Collector Current Common Emitter V CC = 600V, V GE = 15V 10 30 Gate Resistance, R G [Ω ] T C = 125 C Eon Eoff tr td(on) 10 1 0 10 20 30 40 50 60 10 70 15 Gate Resistance, R G [Ω ] Figure 11. Turn-Off Characteristics vs. Collector Current 30 Common Emitter VGE = 15V, RG = 10Ω Common Emitter V GE = 15V, R G = 10 Ω o o T C = 25 C 10 o T C = 125 C Eon o T C = 125 C td(off) Switching Loss [mJ] Switching Time [ns] 25 Figure 12. Switching Loss vs. Collector Current T C = 25 C 100 tf 10 10 20 Collector Current, IC [A] 15 20 25 0.1 30 5 Collector Current, IC [A] FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1 Eoff 1 10 15 20 25 30 Collector Current, IC [A] 5 www.fairchildsemi.com FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT Typical Performance Characteristics (Continued) Figure 13. Gate Charge Characteristics 15 Figure 14. SOA Characteristics Common Emitter RL = 40Ω 10 0 12 Ic M A X (P u lse d) 50μs Ic M A X (C o n tinu o us ) Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] o T C = 25 C 600V 9 400V 6 Vcc = 200V 3 0 1 00 μ s 10 1m s D C O p e ra tio n 1 S in g le N on re p etitive o P u lse T c = 25 C C urves m u st b e de rate d lin ea rly w ith incre ase in te m pe ratu re 0.1 0 .0 1 0 20 40 60 80 100 120 0.1 1 10 10 0 10 00 C o lle c to r - E m itte r V o lta g e , V C E [V ] Gate Charge, Qg [nC] Figure 15. Turn-Off SOA Collector Current, IC [A] 100 10 Safe Operating Area o V GE = 15V, T C = 125 C 1 10 100 1000 Collector-Emitter Voltage, VCE [V] Figure 16. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 10 1 0.5 0.1 0.2 0.1 0.05 0.01 Pdm 0.02 t1 0.01 t2 single pulse 1E-3 1E-5 1E-4 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1 6 www.fairchildsemi.com FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT Typical Performance Characteristics (Continued) Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current 30 Reverse Recovery Currnet , Irr [A] Forward Current , IF [A] 50 10 o TJ = 125 C o TJ = 25 C 1 o TC = 125 C o TC = 25 C 0.1 di/dt = 200A/μs 25 20 15 di/dt = 100A/μs 10 5 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 5 Forward Voltage , VF [V] Figure 19. Stored Charge 15 20 25 Figure 20. Reverse Recovery Time 7000 400 6000 Reverse Recovery Time , trr [ns] Stored Recovery Charge , Qrr [nC] 10 Forward Current , IF [A] di/dt = 200A/μs 5000 4000 di/dt = 100A/μs 3000 2000 1000 di/dt = 100A/μs 300 200 di/dt = 200A/μs 100 0 0 5 10 15 20 5 25 FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1 10 15 20 25 Forward Current , IF [A] Forward Current , IF [A] 7 www.fairchildsemi.com FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT Typical Performance Characteristics TO-3P 15.60 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.00 ±0.20 16.50 ±0.30 3.00 ±0.20 +0.15 1.50 –0.05 3.50 ±0.20 2.00 ±0.20 4.80 ±0.20 3.80 ±0.20 9.60 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1 8 www.fairchildsemi.com FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT Mechanical Dimensions FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT Mechanical Dimensions (continued) TO-3PN Dimensions in Millimeters FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1 9 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ i-Lo™ E2CMOS™ ImpliedDisconnect™ EnSigna™ IntelliMAX™ FACT™ FACT Quiet Series™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 9 FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1 www.fairchildsemi.com FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT TRADEMARKS