Fairchild FJN4314R Pnp epitaxial silicon transistor Datasheet

FJN4314R
FJN4314R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1 =4.7KΩ, R2=47KΩ)
• Complement to FJN3314R
TO-92
1
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
-50
Units
V
VCEO
VEBO
Collector-Emitter Voltage
-50
V
Emitter-Base Voltage
-10
V
IC
Collector Current
-100
mA
PC
Collector Power Dissipation
300
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Equivalent Circuit
C
R1
B
R2
E
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC= -10µA, IE=0
Min.
-50
BVCEO
Collector-Emitter Breakdown Voltage
IC= -100µA, IB=0
-50
ICBO
Collector Cutoff Current
VCB= -40V, IE=0
Typ.
Max.
Units
V
-0.1
µA
V
hFE
DC Current Gain
VCE= -5V, IC= -5mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -10mA, IB= -0.5mA
68
fT
Current Gain Bandwidth Product
VCE= -10V, IC=-5mA
200
MHz
Cob
Output Capacitance
VCB= -10V, IE=0
f=1.0MHz
5.5
pF
-0.3
VI(off)
Input Off Voltage
VCE= -5V, IC= -100µA
VI(on)
Input On Voltage
VCE= -0.2V, IC= -5mA
R1
Input Resistor
3.2
R1/R2
Resistor Ratio
0.09
©2002 Fairchild Semiconductor Corporation
-0.5
V
V
-1.3
V
4.7
6.2
KΩ
0.1
0.11
Rev. A, August 2002
FJN4314R
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
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No Identification Needed
Full Production
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The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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