Fairchild FJP13009 High voltage fast-switching npn power transistor Datasheet

FJP13009
High Voltage Fast-Switching NPN Power Transistor
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Switching Mode Power Supply
1
1.Base
Absolute Maximum Ratings*
Symbol
TO-220
2.Collector
3.Emitter
TC = 25°C unless otherwise noted (notes_1)
Parameter
Value
Units
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current (DC)
12
A
ICP
Collector Current (Pulse)
24
A
IB
Base Current
6
A
PC
Collector Dissipation (TC = 25°C)
100
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature Range
-65 ~ 150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES_1:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Package Marking and Ordering Information
Device Item (notes_2)
Device Marking
FJP13009
J13009
FJP13009H2TU
J130092
FJP13009TU
J13009
Package
Packing Method
Qty(pcs)
TO-220
Bulk
1,200
TO-220
TUBE
1,000
TO-220
TUBE
1,000
Notes_2 :
1) The Affix “-H2” means the hFE classification.
2) The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging.
©2007 Fairchild Semiconductor Corporation
FJP13009 Rev. B
1
www.fairchildsemi.com
FJP13009 High Voltage Fast-Switching NPN Power Transistor
March 2007
Symbol
VCEO(sus)
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max
400
Units
Collector-Emitter Sustaining Voltage
IC = 10mA, IB = 0
V
IEBO
Emitter Cut-off Current
VEB = 9V, IC = 0
hFE
* DC Current Gain
VCE = 5V, IC = 5A (hFE1)
VCE = 5V, IC = 8A
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
IC = 12A, IB = 3A
1
1.5
3
V
V
V
VBE (sat)
* Base-Emitter Saturation Voltage
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
1.2
1.6
V
V
Cob
Output Capacitance
VCB = 10V, f = 0.1MHz
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.5A
tON
Turn On Time
tSTG
Storage Time
VCC = 125V, IC = 8A
IB1 = - IB2 = 1.6A, RL = 15,6Ω
tF
Fall Time
1
8
6
mA
40
30
180
pF
4
MHz
1.1
µs
3
µs
0.7
µs
* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%
hFE Classification
Classification
H1
H2
hFE1
8 ~ 17
15 ~ 28
2
FJP13009 Rev. B
www.fairchildsemi.com
FJP13009 High Voltage Fast-Switching NPN Power Transistor
Electrical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
100
hFE, DC CURRENT GAIN
VCE = 5V
10
1
0.1
1
10
10
IC = 3 IB
1
VBE(sat)
0.1
0.01
0.1
100
IC[A], COLLECTOR CURRENT
VCE(sat)
1
10
100
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10000
1000
tR, tD [ns], TURN ON TIME
Cob[pF], CAPACITANCE
VCC=125V
IC=5IB
100
10
1
0.1
1
10
100
1000
tR
tD, VBE(off)=5V
100
10
0.1
1000
VCB[V], COLLECTOR BASE VOLTAGE
Figure 3. Collector Output Capacitance
10
100
Figure 4. Turn On Time
10000
100
100
0.1
1
10
1
0.1
0.01
100
1
IC[A], COLLECTOR CURRENT
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time
Figure 6. Forward Bias Safe Operating Area
3
FJP13009 Rev. B
µs
10
tF
s
1m
1000
10
s
tSTG
0µ
10
IC[A], COLLECTOR CURRENT
VCC=125V
IC=5IB
DC
tSTG, tF [ns], TURN OFF TIME
1
IC[A], COLLECTOR CURRENT
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FJP13009 High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
(Continued)
120
Vcc=50V,
IB1=1A, IB2 = -1A
L = 1mH
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
100
10
1
0.1
0.01
10
80
60
40
20
0
100
1000
10000
0
VCE[V], COLLECTOR-EMITTER VOLTAGE
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 7. Reverse Bias Safe Operating Area
Figure 8. Power Derating
4
FJP13009 Rev. B
100
www.fairchildsemi.com
FJP13009 High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
FJP13009 High Voltage Fast-Switching NPN Power Transistor
Mechanical Dimensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
5
FJP13009 Rev. B
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Advance Information
Formative or In Design
This datasheet contains the design specifications for product
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First Production
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Rev. I24
© 2007 Fairchild Semiconductor Corporation
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