Fairchild FJP3305 High voltage switch mode application Datasheet

FJP3305
FJP3305
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Electronic Ballast and Switching Regulator
TO-220
1
1.Base
2.Collector
3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
700
Units
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
4
A
ICP
Collector Current (Pulse)
8
A
400
V
9
V
IB
Base Current
2
A
PC
Collector Dissipation (TC=25°C)
75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=500µA, IE=0
Min.
700
BVCEO
Collector-Emitter Breakdown Voltage
IC=5mA, IB=0
400
BVEBO
Emitter-Base Breakdown Voltage
IE=500µA, IC=0
ICBO
Collector Cut-off Current
VCB=700V, IE=0
Emitter Cut-off Current
VEB=9V, IC=0
IEBO
hFE1
hFE2
VCE(sat)
* DC
Current Gain
Collector-Emitter Saturation Voltage
Typ.
Max.
V
9
VCE=5V, IC=1A
19
VCE=5V, IC=2A
8
V
Base-Emitter On Voltage
1
µA
1
µA
35
40
IC=1A, IB=0.2A
0.5
IC=2A, IB=0.5A
0.6
V
1
V
IC=1A, IB=0.2A
1.2
V
IC=2A, IB=0.5A
1.6
IC=4A, IB=1A
VBE(sat)
Units
V
fT
Current Gain Bandwidth Product
VCE=5V, IC=1A
Cob
Output Capacitance
VCB=10V, f=1MHz
tON
Turn On Time
tSTG
Storage Time
tF
Fall Time
VCC=125V,
IC=2A=5IB1=-5IB2
RL=62.5Ω
4
V
V
MHz
65
pF
0.8
µs
4
µs
0.9
µs
* Pulse test: PW≤300µs, Duty Cycle≤2%
hFE Classification
Classification
R
O
hFE2
19 ~ 28
26 ~ 35
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
FJP3305
Typical Characteristics
5.0
100
VCE = 5V
IC [A], COLLECTOR CURRENT
4.5
O
4.0
IB = 300mA
hFE, DC CURRENT GAIN
3.5
3.0
2.5
IB = 100mA
2.0
1.5
Ta = 75 C
O
IB = 50mA
1.0
Ta = 125 C
O
O
Ta = - 25 C
Ta = 25 C
10
0.5
0.0
0
1
2
3
4
5
6
7
8
9
1
0.01
10
0.1
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristics
10
VCE(sat) [V], SATURATION VOLTAGE
VCE = 5V
O
O
Ta = 75 C
Ta = 125 C
hFE, DC CURRENT GAIN
10
Figure 2. DC Current Gain(R-Grade)
100
O
Ta = - 25 C
O
Ta = 25 C
10
1
0.01
0.1
1
10
IC = 4 IB
O
Ta = 125 C
1
O
Ta = 75 C
O
Ta = - 25 C
0.1
O
Ta = 25 C
0.01
0.01
0.1
IC [A], COLLECTOR CUTRRENT
1
10
IC [A], COLLECTOR CURRENT
Figure 3. DC Current Gain(O-Grade)
Figure 4. Saturation Voltage(R-Grade)
10
10
IC = 4 IB
VBE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
1
IC [A], COLLECTOR CUTRRENT
O
Ta = 125 C
1
O
Ta = 75 C
O
Ta = - 25 C
0.1
O
Ta = 25 C
0.01
0.01
0.1
1
IC [A], COLLECTOR CURRENT
Figure 5. Saturation Voltage(O-Grade)
©2004 Fairchild Semiconductor Corporation
10
IC = 4 IB
O
1
Ta = 25 C
O
Ta = - 25 C
O
Ta = 125 C
O
Ta = 75 C
0.1
0.01
0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
Figure 6. Saturation Voltage(R-Grade)
Rev. A, March 2004
FJP3305
Typical Characteristics (Continued)
10
10
tF & tSTG [µ s], SWITCHING TIME
VCE(sat) [V], SATURATION VOLTAGE
IC = 4 IB
O
Ta = 25 C
O
1 Ta = - 25 C
O
Ta = 125 C
O
Ta = 75 C
0.1
0.01
0.01
0.1
1
tSTG
1
tF
0.1
IB1 = - IB2 = 0.4A
VCC = 125V
0.01
0.1
10
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 7. Saturation Voltage(O-Grade)
Figure 8. Switching Time
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
100
IB1=2A, RB2=0
1ms
IC (Pulse)
10
500µs
5ms
IC (DC)
1
0.1
O
TC = 25 C
Single Pulse
VCC=50V, L=1mH
1
10
100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
0.01
1
10
100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Reverse Biased Safe Operating Area
Figure 10. Forward Biased Safe Operating Area
100
PC[W], POWER DISSIPATION
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
o
Tc[ C], CASE TEMPERATURE
Figure 11. Power Derating
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
FJP3305
Package Dimensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
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Rev. I10
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