Fairchild FJV3106R Switching circuit, inverter, interface circuit, driver circuit Datasheet

FJV3106R
FJV3106R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=10KΩ, R2=47KΩ)
• Complement to FJV4106R
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
Marking
R26
Equivalent Circuit
C
R1
B
R2
NPN Epitaxial Silicon Transistor
E
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
50
Units
V
VCEO
VEBO
Collector-Emitter Voltage
50
V
Emitter-Base Voltage
10
IC
V
Collector Current
100
mA
PC
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=10µA, IE=0
BVCEO
Collector-Emitter Breakdown Voltage
IC=100µA, IB=0
ICBO
Collector Cut-off Current
VCB=40V, IE=0
hFE
DC Current Gain
VCE=5V, IC=5mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC=10mA, IB=0.5mA
Cob
Output Capacitance
VCE=10mA, IE=0
f=1.0MHz
Min.
50
Max.
Units
V
0.1
µA
50
V
68
0.3
fT
Current Gain Bandwidth Product
VCB=10V, IC=5mA
VI(off)
Input Off Voltage
VCE=5V, IC=100µA
VI(on)
Input On Voltage
VCE=0.3V, IC=1mA
R1
Input Resistor
7
R1/R2
Resistor Ratio
0.19
©2002 Fairchild Semiconductor Corporation
Typ.
V
3.7
pF
250
MHz
0.3
V
1.4
V
10
13
KΩ
0.21
0.24
Rev. A, July 2002
FJV3106R
Typical Characteristics
100
1000
VCE =0.3V
R1 = 10K
R2 = 47K
VI(on)[V], INPUT VOLTAGE
hFE, DC CURRENT GAIN
VCE = 5V
R1 = 10K
R2 = 47K
100
10
1
0.1
1
10
1
10
100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Input On Voltage
400
VCE = 5V
R1 = 10K
R2 = 47K
350
PC[mW], POWER DISSIPATION
IC [µA], COLLECTOR CURRENT
1
0.1
0.1
100
10k
1k
100
10
1
0.0
10
300
250
200
150
100
50
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VI(off)[V], INPUT OFF VOLTAGE
Figure 3. Input Off Voltage
©2002 Fairchild Semiconductor Corporation
1.8
2.0
0
25
50
75
100
125
150
175
o
T a[ C], AMBIENT TEMPERATURE
Figure 4. Power Derating
Rev. A, July 2002
FJV3106R
Package Dimensions
±0.10
±0.10
2.40
0.40 ±0.03
1.30
0.45~0.60
0.20 MIN
SOT-23
0.03~0.10
0.38 REF
0.40 ±0.03
+0.05
0.12 –0.023
0.96~1.14
0.97REF
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
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As used herein:
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
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user.
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Definition of Terms
Datasheet Identification
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Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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design.
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The datasheet is printed for reference information only.
Rev. I1
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