Fairchild FJV3109R Npn epitaxial silicon transistor Datasheet

FJV3109R
FJV3109R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=4.7KΩ)
• Complement to FJV4109R
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
Equivalent Circuit
Marking
C
R29
R
B
NPN Epitaxial Silicon Transistor
E
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
40
Units
V
VCEO
VEBO
Collector-Emitter Voltage
40
V
Emitter-Base Voltage
5
IC
V
Collector Current
100
mA
PC
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=100µA, IE=0
BVCEO
Collector-Emitter Breakdown Voltage
IE=1mA, IB=0
ICBO
Collector Cut-off Current
VCB=30V, IE=0
hFE
DC Current Gain
VCE=5V, IC=1mA
VCE (sat)
Collector-Emitter Saturation Voltage
IC=10mA, IB=1mA
Cob
Output Capacitance
VCB=10V, IE=0
f=1MHz
fT
Current Gain Bandwidth Product
VCE=10V, IC=5mA
R
Input Resistor
©2002 Fairchild Semiconductor Corporation
Min.
40
Typ.
Max.
Units
V
0.1
µA
40
V
100
600
0.3
3.70
250
3.2
4.7
V
pF
MHz
6.2
KΩ
Rev. A, August 2002
FJV3109R
Typical Characteristics
1000
hFE, DC CURRENT GAIN
VCE = 5V
R = 4.7K
1000
100
VCE(sat)[mV], SATURATION VOLTAGE
10000
IC = 10IB
R = 4.7K
100
10
1
10
0.1
1
10
100
1
10
100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
400
PC[mW], POWER DISSIPATION
350
300
250
200
150
100
50
0
0
25
50
75
100
125
150
175
o
T a[ C], AMBIENT TEMPERATURE
Figure 3. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
FJV3109R
Package Dimensions
±0.10
±0.10
2.40
0.40 ±0.03
1.30
0.45~0.60
0.20 MIN
SOT-23
0.03~0.10
0.38 REF
0.40 ±0.03
+0.05
0.12 –0.023
0.96~1.14
0.97REF
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
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Obsolete
Not In Production
This datasheet contains specifications on a product
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The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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