Fairchild FJY3012R Npn epitaxial silicon transistor Datasheet

FJY3012R
tm
NPN Epitaxial Silicon Transistor
Features
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=47KΩ)
• Complement to FJY4012R
Eqivalent Circuit
C
C
S12
E
B
E
B
SOT - 523F
Absolute Maximum Ratings *
Symbol
Ta = 25°C unless otherwise noted
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
100
mA
TSTG
Storage Temperature Range
-55~150
°C
TJ
Junction Temperature
150
°C
PC
Collector Power Dissipation, by RθJA
200
mW
Max
Units
600
°C/W
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics* T =25°C unless otherwise noted
a
Symbol
RθJA
Parameter
Thermal Resistance, Junction to Ambient
* Minimum land pad size.
Electrical Characteristics*
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Condition
MIN
Typ
MAX
Units
V(BR)CBO
Collector-Emitter Breakdown Voltage
IC = 100 uA, IE = 0
40
V
V(BR)CEO
Collector-Base Breakdown Voltage
IC = 1mA, IB = 0
40
V
ICBO
Collector-Cutoff Current
VCB = 30 V, IE = 0
hFE
DC Current Gain
VCE = 5 V, IC = 1 mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1 mA
fT
Current Gain - Bandwidth Product
VCE = 10V, IC = 5 mA
Ccb
Output Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
R
Input Resistor
0.1
100
0.3
250
47
V
MHz
3.7
32
uA
600
pF
62
KΩ
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
FJY3012R Rev. A
1
www.fairchildsemi.com
FJY3012R NPN Epitaxial Silicon Transistor
November 2006
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
1000
1000
VCE(sat)[mV], SATURATION VOLTAGE
hFE, DC CURRENT GAIN
VCE = 5V
R = 47K
100
10
1
10
IC = 10IB
R = 47K
100
10
1
100
1
IC[mA], COLLECTOR CURRENT
10
100
IC[mA], COLLECTOR CURRENT
Figure 3. Power Derating
280
PC[mW], POWER DISSIPATION
240
200
160
120
80
40
0
0
25
50
75
100
125
150
175
o
Ta[ C], AMBIENT TEMPERATURE
2
FJY3012R Rev. A
www.fairchildsemi.com
FJY3012R NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
FJY3012R NPN Epitaxial Silicon Transistor
Package Dimensions
SOT-523F
Dimensions in Millimeters
3
FJY3012R Rev. A
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Rev. I22
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