Fairchild FJY4008R Pnp epitaxial silicon transistor Datasheet

FJY4008R
PNP Epitaxial Silicon Transistor
Features
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=47KΩ, R2=22KΩ)
• Complement to FJY3008R
Eqivalent Circuit
C
C
S58
E
B
E
B
SOT - 523F
Absolute Maximum Ratings *
Symbol
Ta = 25°C unless otherwise noted
Parameter
Value
Units
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-10
V
IC
Collector Current
-100
mA
TSTG
Storage Temperature Range
-55~150
°C
TJ
Junction Temperature
150
°C
PC
Collector Power Dissipation, by RθJA
200
mW
Max
Units
600
°C/W
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics* T =25°C unless otherwise noted
a
Symbol
RθJA
Parameter
Thermal Resistance, Junction to Ambient
* Minimum land pad size.
Electrical Characteristics*
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Condition
MIN
Typ
MAX
Units
V(BR)CBO
Collector-Base Breakdown Voltage
IC = -10 uA, IE = 0
-50
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = -100 uA, IB = 0
-50
V
ICBO
Collector-Cutoff Current
VCB = -40 V, IE = 0
hFE
DC Current Gain
VCE = -5 V, IC = -5mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC = -10 mA, IB = -0.5 mA
fT
Current Gain - Bandwidth Product
VCE = -10V, IC = -5 mA
Ccb
Output Capacitance
VCB = -10 V, IE = 0, f = 1.0 MHz
VI(off)
Input Off Voltage
VCE = -5 V, IC = -100uA
VI(on)
Input On Voltage
VCE = -0.3V, IC = -2mA
-2.5
V
R1
Input Resistor
15
22
29
KΩ
R1/R2
Resistor Ratio
0.42
0.47
0.52
-0.1
uA
68
-0.3
V
200
MHz
5.5
pF
-0.4
V
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2007 Fairchild Semiconductor Corporation
FJY4008R Rev. A1
1
www.fairchildsemi.com
FJY4008R PNP Epitaxial Silicon Transistor
March 2007
Figure 1. DC current Gain
Figure 2. Input On Voltage
-100
1000
VCE = - 0.3V
R1 = 47K
R2 = 22K
VI(on)[V], INPUT VOLTAGE
hFE, DC CURRENT GAIN
VCE = - 5V
R1 = 47K
R2 = 22K
100
-10
-100
-1
-0.1
-0.1
10
-1
-10
-1000
-1
-10
-100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. Input off Voltage
Figure 4. Power Derating
-1000
240
PC[mW], POWER DISSIPATION
IC [µA], COLLECTOR CURRENT
280
VCE = - 5V
R1 = 47K
R2 = 22K
-100
-10
-0.6
160
120
80
40
0
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
-2.2
-2.4
-2.6
0
-2.8
25
50
75
100
125
150
175
o
VI(off)[V], INPUT OFF VOLTAGE
Ta[ C], AMBIENT TEMPERATURE
2
FJY4008R Rev. A1
200
www.fairchildsemi.com
FJY4008R PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
FJY4008R PNP Epitaxial Silicon Transistor
Package Dimensions
SOT-523F
Dimensions in Millimeters
3
FJY4008R Rev. A1
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Advance Information
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This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
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First Production
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reserves the right to make changes at any time without notice in order
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Rev. I23
4
FJY4008R Rev. A1
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FJY4008R PNP Epitaxial Silicon Transistor
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