Advance Technical Information TrenchT2TM HiperFET N-Channel Power MOSFET FMM150-0075X2F 3 3 VDSS ID25 RDS(on) trr(typ) T1 55 = = ≤ = 75V 120A Ω 5.8mΩ 66ns 4 4 Phase Leg Topology T2 1 1 ISOPLUS i4-PakTM 22 Symbol Test Conditions Maximum Ratings -55 ... +175 175 -55 ... +175 °C °C °C 2500 ~V 300 260 °C °C 20..120 / 4.5..27 N/lb. TJ TJM Tstg 1 Isolated Tab 5 VISOL 50/60HZ, RMS, t = 1min, Leads-to-Tab TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s FC Mounting Force Symbol Test Conditions VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 75 V VGSM Transient ± 30 V z ID25 TC = 25°C 120 A z IDM TC = 25°C, Pulse Width Limited by TJM 500 A IA TC = 25°C 115 A EAS TC = 25°C 850 mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C PD TC = 25°C Features z Maximum Ratings z z Advantages z z 20 V/ns 170 W z z Test Conditions CP Coupling Capacitance Between Shorted Pins and Mounting Tab in the Case dS ,dA dS ,dA Pin - Pin Pin - Backside Metal Characteristic Values Min. Typ. Max. 40 z pF z z z Weight © 2009 IXYS CORPORATION, All Rights Reserved 1.7 5.5 mm mm 9 Easy to Mount Space Savings High Power Density Applications z Symbol Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V Electrical Isolation Avalanche Rated Low QG Low Drain-to-Tab Capacitance Low Package Inductance z DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications g DS100186(08/09) FMM150-0075X2F Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 75 VGS(th) VDS = VGS, ID = 250μA 2.0 IGSS VGS = ±20 V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 100A, Note 1 gfs VDS = 10V, ID = 60A, Note 1 V 4.0 V ± 200 nA 25 μA 250 μA TJ = 150°C 5.8 mΩ 50 83 S 10.5 nF 1165 pF 125 pF Ciss Coss ISOPLUS i4-PakTM Outline VGS = 0V, VDS = 25 V, f = 1 MHz Crss td(on) Resistive Switching Times 23 ns tr VGS = 10V, VDS = 0.5 z VDSS, ID = 115A 18 ns td(off) RG = 2Ω (External) 33 ns 15 ns 178 nC 37 nC 55 nC tf Qg(on) Qgs VGS= 10V, VDS = 0.5 z VDSS, ID = 100A Qgd 0.88 °C/W RthJC RthCS °C/W 0.15 Source-Drain Diode Characteristic Values TJ = 25°C Unless Otherwise Specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 230 A ISM Repetitive, Pulse Width Limited by TJM 900 A VSD IF = 75A, VGS = 0V, Note 1 1.5 V trr IRM IF = 115A, -di/dt = 100A/μs QRM Ref: IXYS CO 0077 R0 VR = 37V, VGS = 0V 66 4.4 ns A 145 nC Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 FMM150-0075X2F Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ T J = 25ºC @ T J = 25ºC 360 160 VGS = 15V 10V 8V 7V 140 7V 280 240 6V 100 ID - Amperes ID - Amperes 120 VGS = 15V 10V 8V 320 80 60 5V 200 6V 160 120 40 5V 80 4V 20 40 0 4V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1 2 3 Fig. 3. Output Characteristics 6 7 8 2.2 160 VGS = 15V 10V 8V 7V 120 VGS = 10V 2.0 1.8 R DS(on) - Normalized 140 ID - Amperes 5 Fig. 4. RDS(on) Normalized to ID = 75A Value vs. Junction Temperature @ T J = 150ºC 6V 100 80 5V 60 4V 40 20 1.6 I D = 150A I D = 75A 1.4 1.2 1.0 0.8 3V 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 75A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 140 2.4 VGS = 10V 2.2 120 15V - - - - 2.0 100 TJ = 175ºC 1.8 ID - Amperes R DS(on) - Normalized 4 VDS - Volts VDS - Volts 1.6 1.4 80 60 40 1.2 TJ = 25ºC 20 1.0 0 0.8 0 50 100 150 200 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 175 FMM150-0075X2F Fig. 8. Transconductance Fig. 7. Input Admittance 160 140 140 120 100 g f s - Siemens ID - Amperes 120 TJ = - 40ºC 100 80 TJ = 150ºC 25ºC - 40ºC 60 40 25ºC 80 150ºC 60 40 20 20 0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 6.0 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 Fig. 10. Gate Charge 10 300 VDS = 38V 9 250 I D = 100A 8 I G = 10mA 7 200 VGS - Volts IS - Amperes 80 ID - Amperes 150 TJ = 150ºC 100 TJ = 25ºC 6 5 4 3 2 50 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 20 40 VSD - Volts 80 100 120 140 160 180 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000.0 100,000 RDS(on) Limit f = 1 MHz 25µs 100.0 Ciss 100µs 10,000 ID - Amperes Capacitance - PicoFarads 60 Coss 1ms 10.0 10ms 1,000 100ms TJ = 175ºC 1.0 DC TC = 25ºC Crss Single Pulse 100 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 VDS - Volts IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: FMM150-0075X2F(68)8-28-09 FMM150-0075X2F Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 30 22 RG = 2Ω , VGS = 10V RG = 2Ω , VGS = 10V VDS = 38V I 20 I 15 D D t r - Nanoseconds 25 t r - Nanoseconds VDS = 38V 20 = 230A = 115A 10 18 TJ = 25ºC 16 14 TJ = 125ºC 12 10 110 5 25 35 45 55 65 75 85 95 105 115 125 120 130 140 150 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance td(on) - - - - TJ = 125ºC, VGS = 10V I D = 230A, 115A VDS = 38V 30 50 28 tf 26 RG = 2Ω, VGS = 10V 45 40 30 35 25 30 20 25 15 20 14 15 12 10 10 10 5 4 6 8 10 12 14 td(off) - - - - 45 I D = 115A 20 40 18 35 16 30 55 20 35 45 55 45 18 40 16 35 14 30 TJ = 25ºC 12 160 170 75 85 95 105 115 15 125 180 190 200 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 210 220 25 20 230 280 tf 240 td(off) - - - - 240 TJ = 125ºC, VGS = 10V VDS = 38V 200 t f - Nanoseconds TJ = 125ºC 150 65 200 160 160 I D = 115A 120 120 80 80 40 40 I D = 230A 0 0 2 4 6 8 10 RG - Ohms 12 14 16 t d(off) - Nanoseconds 50 140 25 I D = 230A 280 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - 130 55 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance RG = 2Ω, VGS = 10V 120 60 TJ - Degrees Centigrade 20 10 110 230 50 25 60 VDS = 38V 220 22 16 26 22 210 VDS = 38V Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 24 200 65 RG - Ohms tf 190 24 35 2 180 t d(off) - Nanoseconds t d(on) - Nanoseconds t r - Nanoseconds 40 55 t f - Nanoseconds tr 170 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 50 45 160 ID - Amperes FMM150-0075X2F Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: FMM150-0075X2F(68)8-28-09