FMMT2369 FMMT2369A ISSUE 3 AUGUST 1995 APPLICATIONS These devices are suitable for use in high speed, low current switching applications tON CIRCUIT t1 +10.6V 3V 3K3Ω CS < 4pF * -1.5V < 1ns tOFF CIRCUIT t1 +10.75V 3V 270Ω B SOT23 < 1ns Pulse width (t1)=300ns Duty cycle = 2% STORAGE TEST CIRCUIT t1 10V 980Ω 500Ω 0 < 1ns Pulse width (t1)=300ns Duty cycle = 2% * Total shunt capacitance of test jig and connectors 3-69 SYMBOL VALUE UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCES 40 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 4.5 V Continuous Collector Current IC 200 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C PARAMETER CS < 4pF * -4.15V PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 3K3Ω -4V PARTMARKING DETAILS FMMT2369 - 1J FMMT2369R - 9R FMMTA2369A - P5 FMMTA2369AR - 9A ABSOLUTE MAXIMUM RATINGS. Pulse width (t1)=300ns Duty cycle = 2% +6V E C 270Ω 0 0 FMMT2369 FMMT2369A SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS CS < 3pF * SYMBOL Collector-Base V(BR)CBO Breakdown Voltage Collector-Emitter V(BR)CEO Breakdown Voltage V (BR)CES Emitter-Base V(BR)EBO Breakdown Voltage Collector Cut-Off ICBO Current Collector-Emitter VCE(sat) Saturation Voltage Base-Emitter VBE(sat) Saturation Voltage hFE Static Forward Current Transfer Ratio FMMT2369 FMMT2369A UNIT CONDITIONS. MIN. MAX. MIN. MAX. 40 40 V IC=10µA, IE=0 15 40 4.5 15 40 4.5 V V V IC=10mA, IB=0* IC=10µA, VBE=0 IE=10µA, IC=0 400 25 nA VCB=20V, IE=0 0.25 0.20 V IC=10mA, IB=1mA* V IC=10mA, IB=1mA* 0.7 0.85 0.7 0.85 40 20 120 40 120 20 20 Output Capacitance Cobo Turn-on Time ton 4 12 4 12 pF ns Turn-off Time toff 18 18 ns Storage Time ts 13 13 ns IC=10mA, VCE=1V* IC=10mA, VCE=1V, Tamb=-55°C* IC=100mA, VCE=1V* IC=100mA, VCE=2V* VCB=5V, IE=0, f=140KHz VCC=3V, VBE(off)=1.5V IC=10mA, IB1=3mA (See tON circuit) VCC=3V, IC=10mA, IB1=3mA IB2=1.5mA(See tOFF circuit) IC=IB1= IB2=10mA (See Storage test circuit) *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device FMMT2369 FMMT2369A ISSUE 3 AUGUST 1995 APPLICATIONS These devices are suitable for use in high speed, low current switching applications tON CIRCUIT t1 +10.6V 3V 3K3Ω CS < 4pF * -1.5V < 1ns tOFF CIRCUIT t1 +10.75V 3V 270Ω B SOT23 < 1ns Pulse width (t1)=300ns Duty cycle = 2% STORAGE TEST CIRCUIT t1 10V 980Ω 500Ω 0 < 1ns Pulse width (t1)=300ns Duty cycle = 2% * Total shunt capacitance of test jig and connectors 3-69 SYMBOL VALUE UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCES 40 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 4.5 V Continuous Collector Current IC 200 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C PARAMETER CS < 4pF * -4.15V PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 3K3Ω -4V PARTMARKING DETAILS FMMT2369 - 1J FMMT2369R - 9R FMMTA2369A - P5 FMMTA2369AR - 9A ABSOLUTE MAXIMUM RATINGS. Pulse width (t1)=300ns Duty cycle = 2% +6V E C 270Ω 0 0 FMMT2369 FMMT2369A SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS CS < 3pF * SYMBOL Collector-Base V(BR)CBO Breakdown Voltage Collector-Emitter V(BR)CEO Breakdown Voltage V (BR)CES Emitter-Base V(BR)EBO Breakdown Voltage Collector Cut-Off ICBO Current Collector-Emitter VCE(sat) Saturation Voltage Base-Emitter VBE(sat) Saturation Voltage hFE Static Forward Current Transfer Ratio FMMT2369 FMMT2369A UNIT CONDITIONS. MIN. MAX. MIN. MAX. 40 40 V IC=10µA, IE=0 15 40 4.5 15 40 4.5 V V V IC=10mA, IB=0* IC=10µA, VBE=0 IE=10µA, IC=0 400 25 nA VCB=20V, IE=0 0.25 0.20 V IC=10mA, IB=1mA* V IC=10mA, IB=1mA* 0.7 0.85 0.7 0.85 40 20 120 40 120 20 20 Output Capacitance Cobo Turn-on Time ton 4 12 4 12 pF ns Turn-off Time toff 18 18 ns Storage Time ts 13 13 ns IC=10mA, VCE=1V* IC=10mA, VCE=1V, Tamb=-55°C* IC=100mA, VCE=1V* IC=100mA, VCE=2V* VCB=5V, IE=0, f=140KHz VCC=3V, VBE(off)=1.5V IC=10mA, IB1=3mA (See tON circuit) VCC=3V, IC=10mA, IB1=3mA IB2=1.5mA(See tOFF circuit) IC=IB1= IB2=10mA (See Storage test circuit) *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device