FMS2024 Production Datasheet v3.0 DC–20 GHZ MMIC SPDT REFLECTIVE SWITCH FEATURES • • • • • FUNCTIONAL SCHEMATIC V2 Low insertion loss: 1.4 dB at 20 GHz High isolation: 37 dB at 20 GHz All reflective design Excellent low control voltage performance Available in die form V1 RFO1 V11 V22 RFIN GENERAL DESCRIPTION V33 V44 The FMS2024 is a low loss high isolation broadband single-pole-double-throw Gallium Arsenide switch, designed on the FL05 0.5µm switch process from Filtronic. This process technology offers leading-edge performance optimised for switch applications. The FMS2024 is developed for the broadband communications, instrumentation and electronic warfare markets. V3 V4 RFO2 TYPICAL APPLICATIONS • • • • Broadband communications Test Instrumentation Fiber Optics Electronic warfare (ECM, ESM) ELECTRICAL SPECIFICATIONS (small-signal unless otherwise stated) PARAMETER CONDITIONS MIN TYP MAX UNITS Insertion Loss DC 5 GHz 10 GHz 15 GHz 20 GHz -1 -1.25 -1.6 -1.6 -1.8 -0.7 -0.85 -1.1 -1.2 -1.35 – – – – – dB dB dB dB dB Isolation DC – 20 GHz – -37 -34 dB Input Return Loss DC – 20 GHz – -14 -11 dB Output Return Loss DC – 20 GHz – -15 -11 dB P1dB 2 GHz 10 GHz 20 GHz 23 22 22 26 24 24 – – – dBm Switching speed 20% to 80% RF 80% to 20% RF 50% DC to 80% RF 50% DC to 20% RF – – – – 20 40 30 50 – – – – ns Note 1: TAMBIENT = 25°C, Vctrl = 0V/-5V, ZIN = ZOUT = 50Ω. Note 2: Sub-10ns 10% to 90% and 90% to 10% switching speeds can be achieved by changing the operating voltage Vctrl from 0V / -5V to +1V / -5V. 1 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMS2024 Production Datasheet v3.0 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL ABSOLUTE MAXIMUM Max Input Power Pin +38dBm Control Voltage Vctrl +1/-10V Operating Temp Toper -40°C to +100°C Storage Temp Tstor -55°C to +150°C PAD NAME DESCRIPTION PIN COORDINATES (µm) RFIN RFIN 116,1055 RFO1 RFOUT1 1408,1929 RFO2 RFOUT2 1408,181 V1 V1 645, 1929 V2 V2 395, 1929 V3 V3 395, 181 V4 V4 645, 181 V11 V11 1753,1608 V22 V22 1753,1408 V33 V33 1753,702 V44 V44 1753,502 Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. PAD LAYOUT Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of bond pad opening DIE SIZE (µm) DIE THICKNESS (µm) MIN. BOND PAD PITCH (µm) MIN. BOND PAD OPENING (µm x µm ) 1910 x 2110 100 150 116 x 116 TRUTH TABLE CONTROL LINES RF PATH V1 OR V11 V2 OR V22 V3 OR V33 V4 OR V44 RFIN-RFO1 RFIN-RFO2 -5V 0V -5V 0V On Off 0V -5V 0V -5V Off On 0V -5V -5V 0V Off Off Note 1: -5V ± 0.2V; 0V ± 0.2V Note 2: V11, V22, V33 and V44 are alternative control lines to V1, V2, V3 and V4 respectively 2 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMS2024 Production Datasheet v3.0 TYPICAL MEASURED PERFORMANCE ON WAFER: Note: Measurement conditions VCTRL= -5V (low) & 0V (high), TAMBIENT = 25°C unless otherwise stated Isolation 0.00 0.00 -0.20 -10.00 -0.40 -20.00 S21 (dB) S21 (dB) Insertion Loss -0.60 -0.80 -30.00 -40.00 -50.00 -1.00 -60.00 -1.20 -70.00 -80.00 -1.40 0 2 4 6 8 10 12 14 16 18 0 20 2 4 6 Input Return Loss 10 12 14 16 18 20 14 16 18 20 Output Return Loss 0.00 0.00 -5.00 -5.00 -10.00 -10.00 S22 (dB) S11 (dB) 8 Frequency (GHz) Frequency (GHz) -15.00 -15.00 -20.00 -25.00 -30.00 -20.00 -35.00 -25.00 -40.00 -45.00 -30.00 0 2 4 6 8 10 12 14 16 18 0 20 2 4 6 8 10 12 Frequency (GHz) Frequency (GHz) 3 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMS2024 Production Datasheet v3.0 TYPICAL MEASURED PERFORMANCE ON WAFER OVER TEMPERATURE: Note: Measurement conditions VCTRL= -5V (low) & 0V (high) TAMBIENT = 25°C TCOLD = -40°C THOT = +85°C Isolation 0.10 0.00 -0.10 -10.00 -0.30 -20.00 -0.50 -30.00 S21 (dB) S21 (dB) Insertion Loss -0.70 -0.90 -40.00 -50.00 -1.10 -60.00 -1.30 -70.00 -80.00 -1.50 0 2 4 6 8 10 12 14 16 18 0 20 2 4 6 10 12 14 16 18 20 14 16 18 20 Output Return Loss Input Return Loss 0.00 0.00 -5.00 -5.00 -10.00 -10.00 S22 (dB) S11 (dB) 8 Frequency (GHz) Frequency (GHz) -15.00 -20.00 -15.00 -20.00 -25.00 -30.00 -35.00 -25.00 -40.00 -30.00 -45.00 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 Frequency (GHz) 8 10 12 Frequency (GHz) 4 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMS2024 Production Datasheet v3.0 PREFERRED ASSEMBLY INSTRUCTIONS: HANDLING PRECAUTIONS: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (250500 V) as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. The back of the die is metallised and the recommended mounting method is by the use of solder or conductive epoxy. If epoxy is selected then it should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters are available on request. DISCLAIMERS: This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4µm diameter gold wire be used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective results for 25µm wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200°C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. This product is not designed for use in any space based or life sustaining/supporting equipment. ORDERING INFORMATION: PART NUMBER FMS2024-000 DESCRIPTION Die in Waffle-pack (Gel-pak available on request) Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. 5 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com