FQD10N20L / FQU10N20L N-Channel QFET® MOSFET 200 V, 7.6 A, 360 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • 7.6 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.8 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 14 pF) • 100% Avalanche Tested • Low level gate drive requirement allowing direct operation from logic drivers D D ! G G S D " S G! ! " " " I-PAK D-PAK ! S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR EAR dv/dt PD - Pulsed (Note 1) TL Unit V 7.6 A 4.8 A 30.4 A ± 20 V (Note 2) 180 mJ Avalanche Current (Note 1) 7.6 A Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 5.1 5.5 2.5 mJ V/ns W 51 0.4 -55 to +150 W W/°C °C 300 °C FQD10N20L / FQU10N20L Unit °C/W (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG FQD10N20L / FQU10N20L 200 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case, Max. RθJA Thermal Resistance, Junction-to-Ambient * 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 110 °C/W 2.48 * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor Corporation FQD10N20L / FQU10N20L Rev. C0 www.fairchildsemi.com FQD10N20L / FQU10N20L N-Channel QFET® MOSFET April 2013 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit 200 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.18 IDSS IGSSF IGSSR VDS = 200 V, VGS = 0 V -- -- 1 µA VDS = 160 V, TC = 125°C -- -- 10 µA Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.0 V Static Drain-Source On-Resistance VGS = 10 V, ID = 3.8 A VGS = 5 V, ID = 3.8 A -- 0.29 0.3 0.36 0.38 Ω Forward Transconductance VDS = 30 V, ID = 3.8 A -- 9.6 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 640 830 pF -- 95 125 pF -- 14 18 pF Zero Gate Voltage Drain Current On Characteristics VGS(th) RDS(on) gFS (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 100 V, ID = 10 A, RG = 25 Ω VDS = 160 V, ID = 10 A, VGS = 5 V (Note 4, 5) (Note 4, 5) -- 13 35 ns -- 150 310 ns -- 50 110 ns -- 95 200 ns -- 13 17 nC -- 2.4 -- nC -- 6.1 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 7.6 A ISM -- -- 30.4 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 7.6 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 120 -- ns Qrr Reverse Recovery Charge -- 0.57 -- µC VGS = 0 V, IS = 10 A, dIF / dt = 100 A/µs (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 4.7mH, IAS = 7.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 10A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2000 Fairchild Semiconductor Corporation FQD10N20L / FQU10N20L Rev. C0 www.fairchildsemi.com FQD10N20L / FQU10N20L N-Channel QFET® MOSFET Electrical Characteristics 1 ID, Drain Current [A] 10 Bottom : VGS 10 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V 3.0 V 1 10 ID, Drain Current [A] Top : 0 10 150℃ 0 10 25℃ ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 30V 2. 250μs Pulse Test -55℃ -1 -1 10 -1 0 10 10 1 10 0 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS = 5V 1 10 1.2 IDR , Reverse Drain Current [A] RDS(on) [ Ω ], Drain-Source On-Resistance 1.6 VGS = 10V 0.8 0.4 ※ Note : TJ = 25℃ 0.0 150℃ ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test 25℃ -1 0 5 10 15 20 10 25 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID , Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 1500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 900 Ciss 600 Coss 300 ※ Notes : 1. V = 0 V 2. f = 1 MHz Crss VGS, Gate-Source Voltage [V] 1200 Capacitance [pF] 0 10 VDS = 40V 8 VDS = 100V VDS = 160V 6 4 2 ※ Note : ID = 10 A 0 -1 10 0 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor Corporation FQD10N20L / FQU10N20L Rev. C0 0 4 8 12 16 20 24 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics www.fairchildsemi.com FQD10N20L / FQU10N20L N-Channel QFET® MOSFET Typical Characteristics (Continued) 1.2 3.0 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 5 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 8 Operation in This Area is Limited by R DS(on) 2 10 100 µ s 1 10 ID , Drain Current [A] ID , Drain Current [A] 6 10 µ s 1 ms 10 ms DC 0 10 ※ Notes : 4 2 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 0 25 10 0 1 10 2 10 10 50 125 150 Figure 10. Maximum Drain Current vs. Case Temperature 0 .2 ※ N otes : 1 . Z θ J C ( t ) = 2 . 4 8 ℃ /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .1 0 .0 5 10 100 D = 0 .5 0 -1 0 .0 2 0 .0 1 PDM s in g le p u ls e θ JC (t), T h e rm a l R e s p o n s e Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] t1 Z t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] Figure 11. Transient Thermal Response Curve ©2000 Fairchild Semiconductor Corporation FQD10N20L / FQU10N20L Rev. C0 www.fairchildsemi.com FQD10N20L / FQU10N20L N-Channel QFET® MOSFET Typical Characteristics FQD10N20L / FQU10N20L N-Channel QFET® MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 5V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 5V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ©2000 Fairchild Semiconductor Corporation FQD10N20L / FQU10N20L Rev. C0 ID (t) VDS (t) VDD tp Time www.fairchildsemi.com FQD10N20L / FQU10N20L N-Channel QFET® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2000 Fairchild Semiconductor Corporation FQD10N20L / FQU10N20L Rev. C0 www.fairchildsemi.com FQD10N20L / FQU10N20L N-Channel QFET® MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters ©2000 Fairchild Semiconductor Corporation FQD10N20L / FQU10N20L Rev. C0 www.fairchildsemi.com FQD10N20L / FQU10N20L N-Channel QFET® MOSFET Mechanical Dimensions I-PAK Dimensions in Millimeters ©2000 Fairchild Semiconductor Corporation FQD10N20L / FQU10N20L Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2000 Fairchild Semiconductor Corporation FQD10N20L / FQU10N20L Rev. 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