isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor FQP33N10 ·FEATURES ·Low RDS(on) ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·DESCRITION ·Designed especially for low voltage applications such as Audio amplifier,high efficiency switching DC/DC converters, and DC motor control. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 33 A IDM Drain Current-Single Plused 132 A PD Total Dissipation @TC=25℃ 127 W Tj Max. Operating Junction Temperature -55~175 ℃ Storage Temperature -55~175 ℃ MAX UNIT Tstg ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case 1.18 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor FQP33N10 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)DSS PARAMETER CONDITIONS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance IGSS MIN MAX 100 V 4 V VGS= 10V; ID= 16.5A 0.052 Ω Gate-Body Leakage Current VGS= ±25V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 100V; VGS=0 1.0 uA VSD Forward On-Voltage IS= 33A; VGS=0 1.5 V Gfs Forward Transconductance VDS= 40V；ID= 16.5A isc website：www.iscsemi.com 2 2 UNIT 22 S isc & iscsemi is registered trademark