MITSUBISHI Nch POWER MOSFET FS100VSJ-03 HIGH-SPEED SWITCHING USE OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 +0.3 0 –0 (1.5) FS100VSJ-03 1 B 5 0.5 q w e wr ¡4V DRIVE ¡VDSS ................................................................................. 30V ¡rDS (ON) (MAX) ............................................................ 4.7mΩ ¡ID ...................................................................................... 100A ¡Integrated Fast Recovery Diode (TYP.) .......... 100ns 2.6 ± 0.4 4.5 0.8 q GATE w DRAIN e SOURCE r DRAIN q e TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 30 V VGSS ID Gate-source voltage Drain current VDS = 0V ±20 100 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) 400 100 A A IS ISM Source current Source current (Pulsed) 100 400 A A PD Tch Maximum power dissipation Channel temperature 125 –55 ~ +150 W °C –55 ~ +150 °C 1.2 g Tstg — Parameter Conditions L = 30µH Storage temperature Weight Typical value Feb.1999 MITSUBISHI Nch POWER MOSFET FS100VSJ-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) trr Thermal resistance Reverse recovery time Limits Test conditions Unit Min. Typ. Max. 30 — — — — ±0.1 V µA — 1.0 — 1.5 0.1 2.0 mA V — 3.5 4.7 mΩ — — 4.7 0.175 8.0 0.235 mΩ V — — 80 8000 — — S pF — — 2250 1300 — — pF pF — — 55 190 — — ns ns — 800 — ns — — 470 1.0 — 1.5 ns V — — — 100 1.00 — °C/W ns ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 50A, VGS = 10V ID = 50A, VGS = 4V ID = 50A, VGS = 10V ID = 50A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 15V, I D = 50A, VGS = 10V, RGEN = RGS = 50Ω IS = 50A, VGS = 0V Channel to case IS = 50A, dis/dt = –50A/µs PERFORMANCE CURVES DRAIN CURRENT ID (A) 160 120 80 40 0 0 50 100 150 100ms 102 7 5 3 2 1ms 10ms 101 7 5 3 2 100 7 5 200 tw = 10ms DC TC = 25°C Single Pulse 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 100 5V 4V DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 50 TC = 25°C Pulse Test VGS = 10V 80 6V DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 200 3V 60 40 2V 20 4V VGS = 10V 6V 40 5V 3V 30 20 2V 10 TC = 25°C Pulse Test 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 0.1 0.2 0.3 0.4 0.5 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS100VSJ-03 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 0.8 0.6 ID = 100A 0.4 70A 50A 0.2 0 0 2 4 6 2 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TC = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 10V 4 TRANSFER CHARACTERISTICS (TYPICAL) 40 20 102 7 5 4 3 2 101 7 5 4 3 TC = 25°C 75°C 125°C 2 0 2 4 6 8 100 0 10 10 VDS = 10V Pulse Test 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 2 Tch = 25°C f = 1MHZ VGS = 0V 105 7 5 3 2 103 7 5 3 2 VGS = 4V 6 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 10 60 104 7 5 3 2 8 DRAIN CURRENT ID (A) 80 0 TC = 25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 100 CAPACITANCE Ciss, Coss, Crss (pF) 8 10 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) TC = 25°C Pulse Test Ciss Coss Crss 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 1.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 101 0 10 Tch = 25°C VDD = 15V VGS = 10V RGEN = RGS = 50Ω td(off) tf tr td(on) 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS100VSJ-03 HIGH-SPEED SWITCHING USE 10 SOURCE CURRENT IS (A) 6 4 VDS = 15V 20V 25V 2 0 40 80 120 160 50 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 4.0 2 100 7 5 4 3 2 –50 0 50 100 VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 TC = 125°C 75°C 25°C 25 0 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 10–1 VGS = 0V Pulse Test 75 200 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 100 Tch = 25°C ID = 100A 8 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 D = 1.0 100 7 0.5 5 3 0.2 2 0.1 PDM 10–1 7 5 3 2 tw 0.05 0.02 0.01 Single Pulse T D= tw T 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999