To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS10ASH-06 HIGH-SPEED SWITCHING USE FS10ASH-06 OUTLINE DRAWING Dimensions in mm 0.5 ± 0.1 2.3 2.3 2.3MIN. 1.0 A 0.5 ± 0.2 0.8 2.3 0.9MAX. 1.0MAX. 5.5 ± 0.2 r 10MAX. 1.5 ± 0.2 6.5 5.0 ± 0.2 q w e wr ¡2.5V DRIVE ¡VDSS .................................................................................. 60V ¡rDS (ON) (MAX) .............................................................. 73mΩ ¡ID ......................................................................................... 10A ¡Integrated Fast Recovery Diode (TYP.) ............. 55ns q GATE w DRAIN e SOURCE r DRAIN q e MP-3 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 60 V VGSS ID Gate-source voltage Drain current VDS = 0V ±10 10 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) 40 10 A A IS ISM Source current Source current (Pulsed) 10 40 A A PD T ch Maximum power dissipation Channel temperature 30 –55 ~ +150 W °C –55 ~ +150 °C 0.26 g T stg — Parameter Conditions L = 100µH Storage temperature Weight Typical value Feb.1999 MITSUBISHI Nch POWER MOSFET FS10ASH-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Limits Test conditions Unit Min. Typ. Max. ID = 1mA, VGS = 0V VGS = ±10V, VDS = 0V 60 — — — — ±0.1 V µA Drain-source leakage current Gate-source threshold voltage VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V — 0.6 — 0.9 0.1 1.2 mA V rDS (ON) Drain-source on-state resistance 54 73 mΩ Drain-source on-state resistance Drain-source on-state voltage ID = 5A, VGS = 4V ID = 5A, VGS = 2.5V — rDS (ON) VDS (ON) — — 64 0.27 95 0.365 mΩ V y fs Ciss Forward transfer admittance Input capacitance — — 18 1150 — — S pF Coss Crss Output capacitance Reverse transfer capacitance — — 185 80 — — pF pF td (on) tr Turn-on delay time Rise time — — 19 45 — — ns ns td (off) Turn-off delay time — 90 — ns tf VSD Fall time Source-drain voltage IS = 5A, VGS = 0V — — 65 1.0 — 1.5 ns V Rth (ch-c) trr Thermal resistance Reverse recovery time Channel to case IS = 10A, dis/dt = –100A/µs — — — 55 4.17 — °C/W ns ID = 5A, VGS = 4V ID = 5A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz VDD = 30V, ID = 5A, VGS = 4V, RGEN = RGS = 50Ω PERFORMANCE CURVES DRAIN CURRENT ID (A) 40 30 20 10 0 0 50 100 150 200 5 3 2 tw = 10ms 101 7 5 3 2 100ms 1ms 100 7 5 3 2 10ms DC 10–1 7 5 TC = 25°C 3 Single Pulse 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 5V 4V 3V 20 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA VGS = 5V 4V 3V 2.5V 10 Tc = 25°C Pulse Test 16 PD = 30W 12 2V 8 4 2V Tc = 25°C Pulse Test 2.5V DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 8 6 4 1.5V 2 1.5V 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10ASH-06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.6 1.2 ID = 15A 0.8 10A 0.4 0 5A 0 1.0 2.0 3.0 40 20 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) Tc = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 4V TRANSFER CHARACTERISTICS (TYPICAL) 24 16 8 102 7 5 4 3 TC = 25°C 75°C 125°C VDS = 5V Pulse Test 2 101 7 5 4 3 2 0 1.0 2.0 3.0 4.0 100 0 10 5.0 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 Ciss 103 7 5 3 2 Coss 102 7 5 3 Tch = 25°C 2 f = 1MHZ 101 60 DRAIN CURRENT ID (A) 32 0 VGS = 2.5V 80 0 5.0 TC = 25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 40 CAPACITANCE Ciss, Coss, Crss (pF) 4.0 100 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) Tc = 25°C Pulse Test Crss VGS = 0V 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 2.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 103 7 5 4 3 Tch = 25°C VDD = 30V VGS = 4V RGEN = RGS = 50Ω 2 102 7 5 4 3 2 101 0 10 td(off) tf tr td(on) 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10ASH-06 HIGH-SPEED SWITCHING USE 5.0 SOURCE CURRENT IS (A) VDS = 10V 3.0 20V 40V 2.0 1.0 0 4 8 12 16 TC = 125°C 24 25°C 8 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 2.0 2 100 7 5 4 3 2 –50 0 50 100 VDS = 10V ID = 1mA 1.6 1.2 0.8 0.4 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 75°C 16 0 101 7 VGS = 4V ID = 1/2ID 5 Pulse Test 4 3 10–1 VGS = 0V Pulse Test 32 20 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 40 Tch = 25°C ID = 10A 4.0 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 D = 1.0 3 0.5 2 PDM 0.2 100 7 5 3 2 0.1 0.05 0.02 0.01 Single Pulse tw T D= tw T 10–1 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999