MITSUBISHI Nch POWER MOSFET FS20KM-6 HIGH-SPEED SWITCHING USE FS20KM-6 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡VDSS ................................................................................ 300V ¡rDS (ON) (MAX) .............................................................. 0.26Ω ¡ID .......................................................................................... 20A ¡Viso ................................................................................ 2000V 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 q GATE w DRAIN e SOURCE q e TO-220FN APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Conditions VGS = 0V VDS = 0V Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight AC for 1minute, Terminal to case Typical value Ratings Unit 300 ±30 20 V V A 60 40 –55 ~ +150 –55 ~ +150 A W °C °C 2000 2.0 Vrms g Feb.1999 MITSUBISHI Nch POWER MOSFET FS20KM-6 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 300V, VGS = 0V Gate-source threshold voltage Drain-source on-state resistance ID = 1mA, VDS = 10V ID = 10A, VGS = 10V ID = 10A, VGS = 10V ID = 10A, VDS = 10V V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Limits Test conditions Turn-off delay time Fall time Source-drain voltage Typ. Max. 300 ±30 — — — — — — ±10 V V µA — 2 — — — 3 0.20 2.0 1 4 0.26 2.6 mA V Ω V 8.5 — — — 13.0 1400 280 55 — — — — S pF pF pF — — — — 25 50 150 65 — — — — ns ns ns ns — 1.5 2.0 V — — 3.13 °C/W VDS = 25V, VGS = 0V, f = 1MHz VDD = 150V, ID = 10A, VGS = 10V, RGEN = RGS = 50Ω IS = 10A, VGS = 0V Channel to case Thermal resistance Unit Min. PERFORMANCE CURVES 40 30 20 10 0 MAXIMUM SAFE OPERATING AREA DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 0 50 100 150 102 7 5 3 2 tw=10µs 101 7 5 3 2 1ms 10ms 100 7 5 3 2 10–1 200 100µs TC = 25°C Single Pulse DC 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) PD = 40W DRAIN CURRENT ID (A) VGS = 20V 10V TC = 25°C Pulse Test 40 OUTPUT CHARACTERISTICS (TYPICAL) PD= 40W VGS=20V 20 10V 6V 5.5V 7V DRAIN CURRENT ID (A) 50 DRAIN-SOURCE VOLTAGE VDS (V) 30 6V 20 5V 10 16 TC = 25°C Pulse Test 12 5V 8 4.5V 4 4V 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS20KM-6 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5 TC = 25°C Pulse Test 16 12 ID = 40A 8 20A 4 10A 0 0 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 20 102 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 0.1 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 16 8 4 8 12 16 VDS = 10V Pulse Test 3 2 TC = 25°C 101 7 5 75°C 3 2 100 0 10 20 125°C 2 3 5 7 101 2 3 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 Ciss 103 7 5 Coss 102 7 5 Crss 3 Tch = 25°C 2 f = 1MHz VGS = 0V 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) 5 CAPACITANCE Ciss, Coss, Crss (pF) 20V 0.2 TRANSFER CHARACTERISTICS (TYPICAL) 24 3 2 VGS = 10V DRAIN CURRENT ID (A) 32 3 2 0.3 GATE-SOURCE VOLTAGE VGS (V) TC = 25°C VDS = 50V Pulse Test 0 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 40 0 TC = 25°C Pulse Test Tch = 25°C VDD = 150V VGS = 10V RGEN = RGS = 50Ω 3 2 td(off) 102 7 5 tf tr 3 2 101 100 td(on) 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS20KM-6 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) VDS = 50V 100V 12 200V 8 4 101 7 5 0 20 40 60 80 25°C 24 75°C 16 8 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 100 7 5 3 2 –50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) 0.4 TC = 125°C GATE CHARGE Qg (nC) 3 2 10–1 VGS = 0V Pulse Test 32 0 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) SOURCE CURRENT IS (A) 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 40 Tch = 25°C ID = 20A –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D=1 3 2 0.5 100 7 5 3 2 10–1 7 5 3 2 0.2 0.1 PDM 0.05 0.02 0.01 tw T Single Pulse D= tw T 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999