Powerex Power FS30KM-3 Nch power mosfet high-speed switching use Datasheet

MITSUBISHI Nch POWER MOSFET
FS30KM-3
HIGH-SPEED SWITCHING USE
FS30KM-3
OUTLINE DRAWING
Dimensions in mm
3 ± 0.3
6.5 ± 0.3
2.8 ± 0.2
f 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15
w
2.6 ± 0.2
1 2 3
¡10V DRIVE
¡VDSS ............................................................................... 150V
¡rDS (ON) (MAX) ............................................................. 92mΩ
¡ID ........................................................................................ 30A
¡Integrated Fast Recovery Diode (TYP.) .......... 110ns
¡Viso ............................................................................... 2000V
0.75 ± 0.15
2.54 ± 0.25
4.5 ± 0.2
2.54 ± 0.25
q GATE
w DRAIN
e SOURCE
q
e
TO-220FN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Parameter
Conditions
VDSS
VGSS
Drain-source voltage
Gate-source voltage
ID
IDM
Drain current
Drain current (Pulsed)
IDA
Avalanche drain current (Pulsed)
IS
ISM
Source current
Source current (Pulsed)
PD
T ch
Maximum power dissipation
Channel temperature
T stg
Viso
Storage temperature
Isolation voltage
AC for 1minute, Terminal to case
Weight
Typical value
—
VGS = 0V
VDS = 0V
L = 100µH
Ratings
Unit
150
±20
V
V
30
120
A
A
30
A
30
120
A
A
30
–55 ~ +150
W
°C
–55 ~ +150
2000
°C
V
g
2.0
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30KM-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
IGSS
Drain-source breakdown voltage
Gate-source leakage current
IDSS
VGS (th)
Drain-source leakage current
Gate-source threshold voltage
rDS (ON)
Drain-source on-state resistance
VDS (ON)
y fs
Drain-source on-state voltage
Forward transfer admittance
Ciss
Coss
Input capacitance
Output capacitance
Crss
td (on)
Reverse transfer capacitance
Turn-on delay time
tr
td (off)
Rise time
Turn-off delay time
tf
Fall time
VSD
Rth (ch-c)
Source-drain voltage
Thermal resistance
trr
Reverse recovery time
Limits
Test conditions
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 150V, V GS = 0V
ID = 1mA, VDS = 10V
ID = 15A, VGS = 10V
Unit
Min.
Typ.
Max.
150
—
—
—
—
±0.1
V
µA
—
2.0
—
3.0
0.1
4.0
mA
V
—
68
92
mΩ
ID = 15A, VDS = 10V
—
—
1.02
29
1.38
—
V
S
VDS = 10V, VGS = 0V, f = 1MHz
—
—
2300
320
—
—
pF
pF
—
—
130
35
—
—
pF
ns
—
—
58
110
—
—
ns
ns
ID = 15A, VGS = 10V
VDD = 80V, ID = 15A, VGS = 10V, RGEN = RGS = 50Ω
IS = 15A, VGS = 0V
Channel to case
IS = 30A, dis/dt = –100A/µs
—
65
—
ns
—
—
1.0
—
1.5
4.17
—
110
—
V
°C/W
ns
PERFORMANCE CURVES
40
30
20
10
0
MAXIMUM SAFE OPERATING AREA
3
2
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
50
0
50
100
150
tw = 10ms
101
7
5
3
2
100ms
1ms
10ms
100
7
5
3
200
TC = 25°C
Single Pulse
102
7
5
3
2
100ms
DC
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V 10V
50
10V 7V
20
6V
7V
6V
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
VGS = 20V
40
30
TC = 25°C
Pulse Test
20
5V
10
PD = 30W
16
5V
12
TC = 25°C
Pulse Test
8
4
PD = 30W
0
0
1
2
3
4
DRAIN-SOURCE VOLTAGE VDS (V)
4V
5
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30KM-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
TC = 25°C
Pulse Test
4
ID = 50A
3
2
30A
1
10A
0
0
4
8
12
TC = 25°C
VDS = 10V
Pulse Test
FORWARD TRANSFER
ADMITTANCE yfs (S)
10
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
102
VDS = 10V
7
Pulse Test
5
4
3
2
TC = 25°C
75°C
125°C
101
7
5
4
3
2
0
4
8
12
16
100 0
10
20
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
Ciss
Coss
Crss
102
7 Tch = 25°C
5 f = 1MHZ
3 VGS = 0V
2
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME (ns)
2
CAPACITANCE
Ciss, Coss, Crss (pF)
20
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
20
103
7
5
3
2
40
TRANSFER CHARACTERISTICS
(TYPICAL)
30
104
7
5
3
2
VGS = 10V
20V
60
DRAIN CURRENT ID (A)
40
0
80
0
20
TC = 25°C
Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
50
DRAIN CURRENT ID (A)
16
100
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (mΩ)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
5
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
103
7
5
4
3
Tch = 25°C
VDD = 80V
VGS = 10V
RGEN = RGS = 50Ω
2
td(off)
102
7
5
4
3
tf
tr
td(on)
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30KM-3
HIGH-SPEED SWITCHING USE
20
SOURCE CURRENT IS (A)
VDS = 50V
12
80V
100V
8
4
0
20
40
60
80
75°C
25°C
20
10
0
0.4
0.8
1.2
1.6
2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
2
100
7
5
4
3
2
–50
0
50
100
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
150
CHANNEL TEMPERATURE Tch (°C)
0.4
TC = 125°C
30
GATE CHARGE Qg (nC)
101
7 VGS = 10V
ID = 1/2ID
5 Pulse Test
4
3
10–1
VGS = 0V
Pulse Test
40
0
100
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
50
Tch = 25°C
ID = 30A
16
0
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
GATE-SOURCE VOLTAGE VGS (V)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
102
7
5
3
2
101
7 D = 1.0
5
3 0.5
2
100 0.2
7 0.1
PDM
5
3
tw
2
0.05
0.02
T
10–1
7
0.01
D= tw
5
T
Single Pulse
3
2
10–2 –4
10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999
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