MITSUBISHI Nch POWER MOSFET FS70KM-2 HIGH-SPEED SWITCHING USE FS70KM-2 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡10V DRIVE ¡VDSS ............................................................................... 100V ¡rDS (ON) (MAX) ............................................................. 20mΩ ¡ID ........................................................................................ 70A ¡Integrated Fast Recovery Diode (TYP.) .......... 120ns ¡Viso ............................................................................... 2000V 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 q GATE w DRAIN e SOURCE q e TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter Conditions VDSS VGSS Drain-source voltage Gate-source voltage ID IDM Drain current Drain current (Pulsed) IDA Avalanche drain current (Pulsed) IS ISM Source current Source current (Pulsed) PD T ch Maximum power dissipation Channel temperature T stg Viso Storage temperature Isolation voltage AC for 1minute, Terminal to case Weight Typical value — VGS = 0V VDS = 0V L = 100µH Ratings Unit 100 ±20 V V 70 280 A A 70 A 70 280 A A 35 –55 ~ +150 W °C –55 ~ +150 2000 °C V g 2.0 Feb.1999 MITSUBISHI Nch POWER MOSFET FS70KM-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance VDS (ON) y fs Drain-source on-state voltage Forward transfer admittance Ciss Coss Input capacitance Output capacitance Crss td (on) Reverse transfer capacitance Turn-on delay time tr td (off) Rise time Turn-off delay time tf Fall time VSD Rth (ch-c) Source-drain voltage Thermal resistance trr Reverse recovery time Limits Test conditions Unit Min. Typ. Max. 100 — — — — ±0.1 V µA — 2.0 — 3.0 0.1 4.0 mA V ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 100V, V GS = 0V ID = 1mA, VDS = 10V ID = 35A, VGS = 10V — 14 20 mΩ ID = 35A, VDS = 10V — — 0.49 53 0.7 — V S VDS = 10V, VGS = 0V, f = 1MHz — — 6540 1150 — — pF pF — — 500 95 — — pF ns — — 175 330 — — ns ns — 190 — ns — — 1.0 — 1.5 3.57 — 120 — V °C/W ns ID = 35A, VGS = 10V VDD = 50V, ID = 35A, VGS = 10V, RGEN = RGS = 50Ω IS = 35A, VGS = 0V Channel to case IS = 70A, dis/dt = –100A/µs PERFORMANCE CURVES DRAIN CURRENT ID (A) 40 30 20 10 0 0 50 100 150 200 tw = 10ms 102 7 5 3 2 100ms 1ms 101 7 5 3 2 10ms 100ms 100 7 TC = 25°C 5 Single Pulse DC 3 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V 8V 100 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 6V 80 TC = 25°C Pulse Test 60 VGS = 20V 10V 8V 6V 50 40 5V 20 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 TC = 25°C Pulse Test 40 PD = 35W 5V 30 20 10 PD = 35W 4V 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS70KM-2 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.6 1.2 100A 0.8 70A 0.4 30A 0 0 4 8 12 16 TC = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) 20 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 102 VDS = 10V 7 Pulse Test 5 4 3 2 TC = 25°C 75°C 125°C 101 7 5 4 3 2 0 4 8 12 16 100 0 10 20 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 2 5 3 2 Ciss Coss Crss 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) Tch = 25°C 105 f = 1MHZ 7 VGS = 0V CAPACITANCE Ciss, Coss, Crss (pF) 4 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 40 103 7 5 3 2 20V 8 TRANSFER CHARACTERISTICS (TYPICAL) 60 104 7 5 3 2 VGS = 10V 12 DRAIN CURRENT ID (A) 80 0 16 0 20 TC = 25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 100 DRAIN CURRENT ID (A) 20 TC = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 2.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 103 7 5 4 3 td(off) 2 tf tr 102 7 5 4 3 Tch = 25°C 2 VDD = 50V td(on) VGS = 10V RGEN = RGS = 50Ω 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS70KM-2 HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) 16 12 VDS = 20V 8 50V 80V 4 0 40 80 120 160 60 75°C 25°C 20 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 2 100 7 5 4 3 2 –50 0 50 100 VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 TC = 125°C 40 0 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 10–1 VGS = 0V Pulse Test 80 200 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 100 Tch = 25°C ID = 70A 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 2 0.5 100 7 5 3 2 0.2 0.1 0.05 PDM 0.02 10–1 7 5 3 2 tw T 0.01 Single Pulse D= tw T 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999