MITSUBISHI Nch POWER MOSFET FS7VS-12 HIGH-SPEED SWITCHING USE FS7VS-12 OUTLINE DRAWING r Dimensions in mm 4.5 1.3 0 +0.3 –0 (1.5) 3.0 –0.5 +0.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.5MAX. 10.5MAX. 1 5 0.5 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS ................................................................................ 600V ¡rDS (ON) (MAX) ................................................................. 1.3Ω ¡ID ............................................................................................ 7A 2.6 ± 0.4 4.5 0.8 e TO-220S APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS Drain-source voltage Gate-source voltage ID IDM PD Drain current Drain current (Pulsed) Maximum power dissipation Tch Tstg — Channel temperature Storage temperature Weight Conditions VGS = 0V VDS = 0V Typical value Ratings Unit 600 ±30 V V 7 21 125 A A W –55 ~ +150 –55 ~ +150 1.2 °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FS7VS-12 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current V (BR) GSS IGSS IDSS VGS (th) rDS (ON) Gate-source threshold voltage Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Limits Test conditions Turn-off delay time Fall time Source-drain voltage Typ. Max. ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V 600 ±30 — — — — — — ±10 V V µA VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 3A, VGS = 10V ID = 3A, VGS = 10V ID = 3A, VDS = 10V — 2 — — — 3 1.0 3.0 1 4 1.3 3.9 mA V Ω V 3.0 — — — 5.0 1100 125 17 — — — — S pF pF pF — — — — 30 30 100 35 — — — — ns ns ns ns — 1.5 2.0 V — — 1.0 °C/W VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 3A, VGS = 10V, RGEN = RGS = 50Ω IS = 3A, VGS = 0V Channel to case Thermal resistance Unit Min. PERFORMANCE CURVES 160 120 80 40 0 MAXIMUM SAFE OPERATING AREA 5 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 200 0 50 100 150 100µs 1ms 100 7 5 3 2 10–1 7 5 200 tw=10µs 101 7 5 3 2 10ms TC = 25°C Single Pulse 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (°C) 16 TC = 25°C Pulse Test 12 6V 8 4 5V OUTPUT CHARACTERISTICS (TYPICAL) 10 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD = 125W 8V 20 DC VGS=20V 10V 8V 8 6V PD = 125W 6 4 5V 2 TC = 25°C Pulse Test 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS7VS-12 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0 TC = 25°C Pulse Test 32 24 ID = 14A 16 10A 7A 8 3A 0 0 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 40 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 0.4 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 8 4 4 8 12 16 TC = 25°C VDS = 10V Pulse Test 3 2 75°C 125°C 100 7 5 3 2 10–1 –1 10 20 2 3 5 7 100 5 7 101 2 3 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 2 Ciss 3 2 Coss 3 2 Crss 101 Tch = 25°C f = 1MHz 7 5 VGS = 0V 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 0.8 TRANSFER CHARACTERISTICS (TYPICAL) 12 102 7 5 1.2 DRAIN CURRENT ID (A) 16 103 7 5 20V 1.6 GATE-SOURCE VOLTAGE VGS (V) TC = 25°C VDS = 50V Pulse Test 0 VGS = 10V 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 20 0 TC = 25°C Pulse Test Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω 3 2 td(off) 102 7 5 tf 3 2 101 10–1 tr td(on) 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS7VS-12 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 200V 12 400V 8 4 101 7 5 20 40 60 80 75°C 12 8 4 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 100 7 5 3 2 –50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) 0.4 25°C GATE CHARGE Qg (nC) 3 2 10–1 16 0 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) SOURCE CURRENT IS (A) VDS = 100V 0 VGS = 0V Pulse Test TC= 125°C 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (t°C) 20 Tch = 25°C ID = 7A –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) GATE-SOURCE VOLTAGE VGS (V) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 D=1 0.5 0.2 0.1 PDM 10–1 7 5 3 2 tw 0.05 0.02 0.01 T D= tw T Single Pulse 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999