FSL9110D, FSL9110R Data Sheet October 1998 File Number 4225.3 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. • 2.5A, -100V, rDS(ON) = 1.30Ω • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 0.3nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 Symbol D G Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet. S Ordering Information RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND 10K Commercial FSL9110D1 10K TXV FSL9110D3 100K Commercial FSL9110R1 100K TXV FSL9110R3 100K Space FSL9110R4 Package TO-205AF G D 4-1 S CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 FSL9110D, FSL9110R Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . .IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) FSL9110D, FSL9110R -100 -100 UNITS V V 2.5 1.5 7.5 ±20 A A A V 15 6 0.12 7.5 2.5 7.5 -55 to +150 300 W W W/ oC A A A oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On-State Voltage Drain to Source On Resistance Turn-On Delay Time IDSS IGSS VDS(ON) rDS(ON)12 td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time VDS = -80V, VGS = 0V VGS = ±20V VGS = 0V to -20V Gate Charge at 12V Qg(12) VGS = 0V to -12V Threshold Gate Charge Qg(TH) VGS = 0V to -2V UNITS - - V - - -7.0 V TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC -2.0 - -6.0 V -1.0 - - V - - 25 µA - - 250 µA - - 100 nA - - 200 nA - - -3.58 V TC = 25oC - 1.00 1.30 Ω TC = 125oC - - 2.16 Ω - - 20 ns - - 45 ns - - 40 ns - - 45 ns - - 14 nC - 7.0 7.9 nC - - 0.64 nC VDD = -50V, ID = 2.5A, RL = 20Ω, VGS -12V, RGS = 7.5Ω Qg(TOT) MAX -100 tf Total Gate Charge TYP TC = -55oC VGS = -12V, ID = 2.5A ID = 1.5A, VGS = -12V MIN VDD = -50V, ID = 2.5A Gate Charge Source Qgs - 1.9 2.1 nC Gate Charge Drain Qgd - 3.4 3.8 nC V(PLATEAU) ID = 2.5A, VDS = -15V - -7 - V Input Capacitance Plateau Voltage CISS - 175 - pF Output Capacitance COSS VDS = -25V, VGS = 0V, f = 1MHz - 70 - pF Reverse Transfer Capacitance CRSS - 20 - pF Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient 4-2 RθJC RθJA - 8.3 - oC/W - 175 - oC/W FSL9110D, FSL9110R Source to Drain Diode Specifications PARAMETER SYMBOL Forward Voltage TEST CONDITIONS VSD Reverse Recovery Time MIN ISD = 2.5A trr TYP MAX -0.6 - -1.8 V - - 110 ns MIN MAX UNITS ISD = 2.5A, dISD/dt = 100A/µs Electrical Specifications up to 100K RAD UNITS TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS Drain to Source Breakdown Volts (Note 3) BVDSS VGS = 0, ID = 1mA -100 - V Gate to Source Threshold Volts (Note 3) VGS(TH) VGS = VDS, ID = 1mA -2.0 -6.0 V Gate to Body Leakage (Notes 2, 3) IGSS VGS = ±20V, VDS = 0V - 100 nA Zero Gate Leakage (Note 3) IDSS VGS = 0, VDS = -80V - 25 µA Drain to Source On-State Volts (Notes 1, 3) VDS(ON) VGS = -12V, ID = 2.5A - -3.58 V Drain to Source On Resistance (Notes 1, 3) rDS(ON)12 VGS = -12V, ID = 1.5A - 1.30 Ω NOTES: 1. Pulse test, 300µs Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . Single Event Effects (SEB, SEGR) Note 4 ENVIRONMENT (NOTE 5) TEST SYMBOL Single Event Effects Safe Operating Area SEESOA ION SPECIES TYPICAL LET (MeV/mg/cm) TYPICAL RANGE (µ) APPLIED VGS BIAS (V) (NOTE 6) MAXIMUM VDS BIAS (V) Ni 26 43 20 -100 Br 37 36 10 -100 Br 37 36 15 -80 Br 37 36 20 -50 NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). Typical Performance Curves Unless Otherwise Specified LET = 26MeV/mg/cm2, RANGE = 43µ LET = 37MeV/mg/cm2, RANGE = 36µ -120 1E-3 LIMITING INDUCTANCE (HENRY) FLUENCE = 1E5 IONS/cm2 (TYPICAL) -100 VDS (V) -80 -60 -40 -20 1E-4 ILM = 10A 30A 1E-5 100A 300A 1E-6 TEMP = 25oC 0 0 5 10 15 20 25 VGS (V) FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA 4-3 1E-7 -10 -30 -100 DRAIN SUPPLY (V) -300 FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS -1000 FSL9110D, FSL9110R Typical Performance Curves Unless Otherwise Specified (Continued) 3 50 ID , DRAIN CURRENT (A) TC = 25oC ID , DRAIN (A) 2 1 10 100µs 1ms 1 10ms OPERATION IN THIS AREA MAY BE 100ms LIMITED BY rDS(ON) 0 -50 0 50 0.1 -1 150 100 TC , CASE TEMPERATURE (oC) FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE -10 -100 VDS , DRAIN TO SOURCE VOLTAGE (V) -500 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 2.5 PULSE DURATION = 250ms, VGS = -12V, ID = 1.5A NORMALIZED rDS(ON) 2.0 QGON 12V QGD QGS VG 1.5 1.0 0.5 0.0 -80 CHARGE -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) NORMALIZED THERMAL RESPONSE (ZθJC) FIGURE 5. BASIC GATE CHARGE WAVEFORM FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 PDM SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE 4-4 t1 t2 100 101 FSL9110D, FSL9110R Typical Performance Curves Unless Otherwise Specified (Continued) IAS , AVALANCHE CURRENT (A) IF R ≠ 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) 10 STARTING TJ = 25oC STARTING TJ = 150oC 1 0.01 0.1 1 tAV, TIME IN AVALANCHE (ms) 10 FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS L BVDSS + CURRENT I TRANSFORMER AS tP - VARY tP TO OBTAIN REQUIRED PEAK IAS 0V VDS IAS VDD + 50Ω - tP VDD 50V-150V DUT 50Ω VGS ≤ 20V tAV FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 10. UNCLAMPED ENERGY WAVEFORMS tON VDD tOFF td(ON) td(OFF) tr RL VDS tf 90% 90% VDS 0V 10% DUT 10% 90% VGS = -12V RGS 50% VGS 50% PULSE WIDTH 10% FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT 4-5 FIGURE 12. RESISTIVE SWITCHING WAVEFORMS FSL9110D, FSL9110R Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Gate to Source Leakage Current IGSS VGS = ±20V ±20 (Note 7) nA Zero Gate Voltage Drain Current IDSS VDS = 80% Rated Value Drain to Source On Resistance rDS(ON) TC = 25oC at Rated ID Gate Threshold Voltage VGS(TH) ID = 1.0mA ±25 (Note 7) µA ±20% (Note 8) Ω ±20% (Note 8) V NOTES: 7. Or 100% of Initial Reading (whichever is greater). 8. Of Initial Reading. Screening Information TEST JANTXV EQUIVALENT JANS EQUIVALENT Gate Stress VGS = -30V, t = 250µs VGS = -30V, t = 250µs Pind Optional Required Pre Burn-In Tests (Note 9) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) Steady State Gate Bias (Gate Stress) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests and Limits Table All Delta Parameters Listed in the Delta Tests and Limits Table Steady State Reverse Bias (Drain Stress) MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours PDA 10% 5% Final Electrical Tests (Note 9) MIL-S-19500, Group A, Subgroup 2 MIL-S-19500, Group A, Subgroups 2 and 3 NOTE: 9. Test limits are identical pre and post burn-in. Additional Screening Tests PARAMETER SYMBOL MAX UNITS VDS = -80V, t = 10ms 0.68 A IAS VGS(PEAK) = -15V, L = 0.1mH 7.5 A Thermal Response ∆VSD tH = 10ms; VH = -15V; IH = 1A 90 mV Thermal Impedance ∆VSD tH = 500ms; VH = -15V; IH = 1A 230 mV Safe Operating Area SOA Unclamped Inductive Switching 4-6 TEST CONDITIONS FSL9110D, FSL9110R Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent 1. Rad Hard TXV Equivalent - Standard Data Package A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet E. Preconditioning Attributes Data Sheet Hi-Rel Lot Traveler HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data D. Group A - Attributes Data Sheet F. Group A - Attributes Data Sheet E. Group B - Attributes Data Sheet G. Group B - Attributes Data Sheet F. Group C - Attributes Data Sheet H. Group C - Attributes Data Sheet G. Group D - Attributes Data Sheet I. Group D - Attributes Data Sheet 2. Rad Hard TXV Equivalent - Optional Data Package A. Certificate of Compliance 2. Rad Hard Max. “S” Equivalent - Optional Data Package A. Certificate of Compliance B. Assembly Flow Chart B. Serialization Records C. Preconditioning - Attributes Data Sheet - Precondition Lot Traveler - Pre and Post Burn-In Read and Record Data C. Assembly Flow Chart D. Group A - Attributes Data Sheet - Group A Lot Traveler E. Group B - Attributes Data Sheet - Group B Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) F. Group C G. Group D - Attributes Data Sheet - Group C Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) - Attributes Data Sheet - Group D Lot Traveler - Pre and Post RAD Read and Record Data Class S - Equivalents 1. Rad Hard “S” Equivalent - Standard Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report 4-7 D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data I. Group D - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data FSL9110D, FSL9110R TO-205AF 3 LEAD JEDEC TO-205AF HERMETIC METAL CAN PACKAGE INCHES ØD ØD1 SYMBOL P A SEATING PLANE h L Øb e e1 2 e2 1 90o 3 45o j k MIN MILLIMETERS MAX MIN MAX NOTES A 0.160 0.180 4.07 4.57 - Øb 0.016 0.021 0.41 0.53 2, 3 ØD 0.350 0.370 8.89 9.39 - ØD1 0.315 0.335 8.01 8.50 - e 0.095 0.105 2.42 2.66 4 e1 0.190 0.210 4.83 5.33 4 e2 0.095 0.105 2.42 2.66 4 h 0.010 0.020 0.26 0.50 - j 0.028 0.034 0.72 0.86 - k 0.029 0.045 0.74 1.14 - L 0.500 0.560 12.70 14.22 3 P 0.075 - 1.91 - 5 NOTES: 1. These dimensions are within allowable dimensions of Rev. E of JEDEC TO-205AF outline dated 11-82. 2. Lead dimension (without solder). 3. Solder coating may vary along lead length, add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.100 inches (2.54mm) from bottom of seating plane. 5. This zone controlled for automatic handling. The variation in actual diameter within this zone shall not exceed 0.010 inches (0.254mm). 6. Lead no. 3 butt welded to stem base. 7. Controlling dimension: Inch. 8. Revision 3 dated 6-94. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 4-8 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029